4N36

4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842 APPLICATIONS • AC mains detection i179004-5 • Reed relay driving DESCRIPTION • Switch mode power supply feedback Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. • Telephone ring detection AGENCY APPROVALS • Logic coupling with high frequency noise rejection • Logic ground isolation • Underwriters laboratory file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156 ORDER INFORMATION PART REMARKS 4N35 CTR > 100 %, DIP-6 4N36 CTR > 100 %, DIP-6 4N37 CTR > 100 %, DIP-6 ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 50 mA t ≤ 10 μs Surge current IFSM 1 A Pdiss 70 mW Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7 V IC 50 mA IC 100 mA Pdiss 70 mW VISO Power dissipation OUTPUT Collector current t ≤ 1 ms Power dissipation COUPLER Isolation test voltage 5000 VRMS Creepage ≥7 mm Clearance ≥7 mm ≥ 0.4 mm Isolation thickness between emitter and detector Document Number: 81181 Rev. 1.2, 07-Jan-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 153 4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 100 °C Tsld 260 °C COUPLER Comparative tracking index Isolation resistance Soldering temperature (2) DIN IEC 112/VDE 0303, part 1 max.10 s dip soldering: distance to seating plane ≥ 1.5 mm 175 Ω Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Junction capacitance Forward voltage (2) Reverse current (2) Capacitance VR = 0 V, f = 1 MHz Cj 50 IF = 10 mA VF 1.3 1.5 V IF = 10 mA, Tamb = - 55 °C VF 1.3 1.7 V 10 μA 0.9 VR = 6 V IR 0.1 VR = 0 V, f = 1 MHz CO 25 pF pF OUTPUT Collector emitter breakdown voltage(2) Emitter collector breakdown voltage(2) IC = 1 mA 4N35 BVCEO 30 V 4N36 BVCEO 30 V 4N37 BVCEO 30 V BVECO 7 V 4N35 BVCBO 70 V 4N36 BVCBO 70 V 4N37 BVCBO 70 4N35 ICEO 5 50 nA IE = 100 μA OUTPUT Collector base breakdown voltage (2) IC = 100 μA, IB = 1 μA VCE = 10 V, IF = 0 Collector emitter leakage current (2) Collector emitter capacitance V 4N36 ICEO 5 50 nA VCE = 10 V, IF = 0 4N37 ICEO 5 50 nA 4N35 ICEO 500 μA VCE = 30 V, IF = 0, Tamb = 100 °C 4N36 ICEO 500 μA 4N37 ICEO 500 μA VCE = 0 CCE 6 pF 0.6 pF COUPLER Resistance, input output (2) VIO = 500 V RIO Capacitance, input output f = 1 MHz CIO Ω 1011 Notes (1) T amb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) Indicates JEDEC registered value. www.vishay.com 154 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81181 Rev. 1.2, 07-Jan-10 4N35, 4N36, 4N37 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN 4N35 CTRDC 100 % 4N36 CTRDC 100 % 4N37 CTRDC 100 4N35 CTRDC 40 50 % 4N36 CTRDC 40 50 % 4N37 CTRDC 40 50 % TEST CONDITION SYMBOL MIN. TYP. VCC = 10 V, IC = 2 mA, RL = 100 Ω ton, toff VCE = 10 V, IF = 10 mA DC current transfer ratio (1) VCE = 10 V, IF = 10 mA, TA = - 55 °C to + 100 °C TYP. MAX UNIT % Note (1) Indicates JEDEC registered values. SWITCHING CHARACTERISTICS PARAMETER Switching time (1) MAX. 10 UNIT μs Note (1) Indicates JEDEC registered values. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specied 1.5 1.3 NCTR - Normalized CTR TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 85 °C 0.8 1 10 NCTR - Normalized CTR TA = 50 °C 0.5 NCTR(SAT) NCTR 0.1 1 1.0 TA = 25 °C 0.5 NCTR(SAT) Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 1.0 TA = 70 °C 0.5 NCTR(SAT) NCTR NCTR 0.0 i4n25_02 1 10 100 IF - LED Current (mA) Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current Document Number: 81181 Rev. 1.2, 07-Jan-10 100 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) = 0.4 V 0 10 IF - LED Current (mA) i4n25_03 Fig. 1 - Forward Voltage vs. Forward Current 1.5 1.0 100 IF - Forward Current (mA) i4n25_01 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 0.0 0.7 0.1 NCTR - Normalized CTR VF -Forward Voltage (V) 1.4 0.0 0.1 i4n25_04 1 10 100 IF - LED Current (mA) Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 155 4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V NCTRcb - Normalized CTRcb NCTR - Normalized CTR 1.5 1.0 TA = 85 °C 0.5 NCTR(SAT) NCTR 1 10 100 IF - LED Current (mA) i4n25_05 1 10 100 IF - LED Current (mA) 10 30 25 50 °C 20 70 °C 15 85 °C 25 °C 10 5 Normalized Photocurrent ICE - Collector Current (mA) 25 °C 50 °C 70 °C Fig. 8 - Normalized CTRcb vs. LED Current and Temperature 35 0 10 20 30 40 50 60 1 0.1 Nib, TA = - 20 °C Nib, TA = 20 °C Nib, TA = 50 °C Nib, TA = 70 °C i4n25_09 IF - LED Current (mA) i4n25_06 Normalized to: IF = 10 mA, TA = 25 °C 0.01 0.1 0 Fig. 6 - Collector Emitter Current vs. Temperature and LED Current 1 10 100 IF - LED Current (mA) Fig. 9 - Normalized Photocurrent vs. IF and Temperature 105 1.2 70 °C 4 NhFE - Normalized hFE ICEO - Collector Emitter (nA) 0.5 i4n25_08 Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current 10 1.0 0.0 0.1 0.0 0.1 Normalized to: VCB = 9.3 V, IF = 10 mA, TA = 25 °C 103 102 VCE = 10 V 101 Typical 100 10- 1 10- 2 - 20 i4n25_07 25 °C - 20 °C 0.8 Normalized to: IB = 20 µA, VCE = 10 V, TA = 25 °C 0.6 0.4 0 20 40 60 80 100 Tamb- Ambient Temperature (°C) Fig. 7 - Collector Emitter Leakage Current vs. Temperature www.vishay.com 156 1.0 1 i4n25_10 10 100 1000 Ib - Base Current (µA) Fig. 10 - Normalized Non-Saturated hFE vs. Base Current and Temperature For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81181 Rev. 1.2, 07-Jan-10 4N35, 4N36, 4N37 NhFE(sat) - Normalized Saturated hFE Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection 1.5 Normalized to: VCE = 10 V, Ib = 20 µA TA = 25 °C 70 °C 50 °C VCC = 5 V 1.0 f = 10 kHz DF = 50 % 25 °C - 20 °C VO 0.5 IF = 10 mA VCE = 0.4 V 0.0 1 10 100 1000 Ib - Base Current (µA) i4n25_11 i4n25_14 Fig. 11 - Normalized hFE vs. Base Current and Temperature tPHL 2.0 100 1.5 10 tPLH 1 0.1 1 tPHL - Propagation Delay (µs) IF = 10 mA, TA = 25 °C VCC = 5.0 V, Vth = 1.5 V i4n25_12 Fig. 14 - Switching Schematic 2.5 1000 tPLH- Propagation Delay (µs) RL 1.0 100 10 RL - Collector Load Resistor (kΩ) Fig. 12 - Propagation Delay vs. Collector Load Resistor IF tD tR VO tPLH VTH = 1.5 V tPHL tS tF i4n25_13 Fig. 13 - Switching Timing Document Number: 81181 Rev. 1.2, 07-Jan-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 157 4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection PACKAGE DIMENSIONS in millimeters 7.62 typ. 7.12 ± 0.3 3.5 ± 0.3 6.5 ± 0.3 1.2 ± 0.1 14771_2 6 5 4 1 2 3 4.5 ± 0.3 0.5 ± 0.1 2.8 ± 0.15 4.5 ± 0.3 0.25 7.62 to 9.5 typ. PACKAGE MARKING 4N35 V YWW 24 21764-24 www.vishay.com 158 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81181 Rev. 1.2, 07-Jan-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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