B140-M3/5AT

B120-M3, B130-M3, B140-M3, B150-M3, B160-M3 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability SMA (DO-214AC) Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Anode LINKS TO ADDITIONAL RESOURCES 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D Models Note • These devices are not AEC-Q101 qualified PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 20 V, 30 V, 40 V, 50 V, 60 V IFSM 30 A VF 0.52 V, 0.75 V TJ max. 125 °C, 150 °C Package SMA (DO-214AC) Circuit configuration Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code B120 B130 B140 B150 B160 B12 B13 B14 B15 B16 20 30 40 50 60 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range dV/dt TJ TSTG 10 000 -65 to +125 -65 to +150 V V/μs -65 to +150 °C °C Revision: 10-Dec-2020 Document Number: 89926 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120-M3, B130-M3, B140-M3, B150-M3, B160-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A SYMBOL B120 B130 VF (1) TA = 25 °C Maximum reverse current at rated VR B150 B160 UNIT 0.75 V 0.2 IR (2) TA = 100 °C B140 0.52 6.0 mA 5.0 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance B120 B130 B140 RθJA (1) 95 RθJL (1) 30 B150 B160 UNIT °C/W Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B140-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel B140-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.8 Resistive or Inductive Load B120 thru B140 B150 and B160 0.8 B120 thru B140 0.6 0.4 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 D = 0.8 0.7 1.0 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 0 D = tp/T tp 0.8 1.0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 1.2 Lead Temperature (°C) Average Forward Current Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 10-Dec-2020 Document Number: 89926 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120-M3, B130-M3, B140-M3, B150-M3, B160-M3 www.vishay.com Vishay General Semiconductor Axis Title 10000 10 0.8 B150 and B160 Average Power Loss (W) 0.7 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 D = tp/T tp 0.8 1.0 TJ = 150 °C 2nd line Instantaneous Forward Current (A) D = 0.8 TJ = 125 °C 0.2 0.4 0.6 TJ = 25 °C 0.1 100 TJ = -40 °C B150, B160 0 0 1000 1 10 0.01 1.2 0 Average Forward Current (A) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Typical Instantaneous Forward Characteristics Axis Title 100 000 30 20 10 10000 TJ = 150 °C 10 000 1000 1000 100 TJ = 125 °C 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 40 10 TJ = 25 °C 1 100 0.1 TJ = -40 °C 0.01 10 0.001 0 1 10 100 10 Number of Cycles at 50 Hz 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Leakage Characteristics Axis Title 10000 10 1000 TJ = 125 °C 1 1000 TJ = 25 °C 0.1 100 TJ = -40 °C B120, B130, B140 10 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 B120 thru B140 B150 and B160 0.01 0 Junction Capacitance (pF) 2nd line Instantaneous Forward Current (A) TJ = 150 °C 1.4 Instantaneous Forward Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics 10 0.1 1 10 100 Reverse Voltage (V) Fig. 8 - Typical Junction Capacitance Revision: 10-Dec-2020 Document Number: 89926 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B120-M3, B130-M3, B140-M3, B150-M3, B160-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 10-Dec-2020 Document Number: 89926 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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