BAS40-02V
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• This diode features very low turn-on voltage and
fast switching
2
1
• This device is protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
22321
• AEC-Q101 qualified available
LINKS TO ADDITIONAL RESOURCES
• Space saving SOD-523 package
3D 3D
• Base P/N-G3 - RoHS-compliant, commercial
grade
3D Models
MECHANICAL DATA
• Base P/N-HG3 - RoHS-compliant, AEC-Q101 qualified
Case: SOD-523
Weight: approx. 1.4 mg
Molding compound flammability rating: UL 94 V-0
Terminals: high temperature soldering guaranteed:
260 °C/10 s at terminals
Packaging codes / options:
08/3K per 7" reel (8 mm tape), 3K/box
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
BAS40-02V
ORDERING CODE
AEC-Q101 QUALIFIED
BAS40-02V-G3-08
no
BAS40-02V-HG3-08
yes
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
Single
.W
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VRRM
40
V
IF
120
mA
tp = 10 ms square wave, Tj = 25 °C prior to surge
IFSM
600
mA
on FR-4 board with recommended soldering footprint
Ptot
150
mW
SYMBOL
VALUE
UNIT
RthJA
680
K/W
RthJL
480
K/W
Tj
125
°C
Operating temperature range
Top
-55 to +125
°C
Storage temperature range
Tstg
-55 to +150
°C
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
UNIT
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air
JEDEC®
on FR-4 board according to
51-3 with
recommended soldering footprint
Thermal resistance junction to lead
Junction temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Reverse breakdown voltage
IR = 10 μA (pulsed)
V(BR)
40
Pulse test VR = 30 V, tp < 300 μs
IR
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
TYP.
MAX.
UNIT
20
100
nA
V
Pulse test tp < 300 μs, IF = 1 mA
VF
380
mV
Pulse test tp < 300 μs, IF = 40 mA
VF
1000
mV
VR = 0 V, f = 1 MHz
CD
5
pF
IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ω
trr
5
ns
4
Rev. 1.5, 12-Nov-2020
Document Number: 85651
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS40-02V
www.vishay.com
Vishay Semiconductors
0.1 [0.004] max.
0.20 [0.008]
0.08 [0.003]
0.75 [0.029]
0.1 [0.004]
0.3 [0.012]
0.55 [0.021]
PACKAGE DIMENSIONS in millimeters [inches]: SOD-523
0.9 [0.035]
0.85 [0.033] min.
0.17 [0.007]
0.37 [0.015]
0.7 [0.028]
1.7 [0.067]
1.5 [0.059]
1.3 [0.051]
1.1 [0.043]
0.5 [0.020]
0.35 [0.014]
0.18 [0.007]
Footprint recommendation:
1.45 [0.057]
Document no.: S8-V-3880.02-003 (4)
Created - Date: 04. April 2017
Rev. 4 - Date: 03. Aug. 2020
23093
0.35 [0.014]
Rev. 1.5, 12-Nov-2020
Document Number: 85651
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOD-523
SOD-523
Vishay Semiconductors
0.7 (0.028)
1.7 (0.067)
0.9 (0.035)
1.5 (0.059)
0.7 (0.028)
0.5 (0.020)
max. 0.8
0.08 (0.003)
0.2 (0.008)
PACKAGE DIMENSIONS in millimeters (inches)
1.3 (0.051)
1.1 (0.043)
0.4 (0.016)
0.18 (0.007)
0.35 (0.014)
foot print recommendation:
1.45 (0.057)
Document no.: S8-V-3880.02-001 (4)
Rev. g - Date: 13.April 2010
0.35 (0.014)
16864
Document Number: 84005
Rev. 1.3, 19-Jul-10
For technical questions within your region, please contact one of the following:
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Revision: 01-Jan-2019
1
Document Number: 91000