BAS40LTH-G3-08

BAS40LTH www.vishay.com Vishay Semiconductors Small Signal Schottky Diode with TJ max. = 175 °C FEATURES 1 • TJ max. = 175 °C, rated for high temperature, mission critical applications • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm) 2 • Power dissipation better than SOT-23 LINKS TO ADDITIONAL RESOURCES • Surface-mounted device (SMD) plastic package with visible and sidewall plated / wettable flanks 3D 3D 3D Models Models Available Application Notes Case: DFN1006-2A • Soldering can be checked by standard visual inspection. No X-ray inspection necessary to meet automotive AOI requirements Weight: 0.83 mg • AEC-Q101 qualified available Molding compound flammability rating: UL 94 V-0 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Terminals: high temperature soldering guaranteed: Peak temperature max. 260 °C Packaging codes/options: 08/10K per 7" reel (8 mm tape) PARTS TABLE PART BAS40LTH ORDERING CODE AEC-Q101 QUALIFIED BAS40LTH-G3-08 no BAS40LTH-HG3-08 yes CIRCUIT CONFIGURATION TYPE MARKING REMARKS Single GE Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Forward current on FR-4 board with recommended soldering footprint SYMBOL VALUE VR 40 V IF 200 mA TJ = 25 °C, tp = 10 ms Non-repetitive peak forward current TJ = 100 °C, tp = 10 ms 500 IFSM TJ = 125 °C, tp = 20 μs Power dissipation on FR-4 board with recommended soldering footprint RthJL = 100 K/W UNIT 200 mA 500 Ptot 350 mW 1500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT according to JEDEC® 51-3 on FR-4 board with recommended soldering footprint RthJA 420 K/W Thermal resistance junction to lead RthJL 100 K/W Maximum junction temperature Tj max. 175 °C Storage temperature range Tstg -55 to +175 °C Operating temperature range Top -55 to +175 °C Thermal resistance junction to ambient air Rev. 1.0, 12-Jul-2022 Document Number: 86328 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS40LTH www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. VR = 40 V, TJ = 25 °C Leakage current VR = 30 V, TJ = 150 °C IR UNIT 10 μA 200 μA VR = 40 V, TJ = 150 °C 500 μA IF = 1 mA 400 mV 560 mV 1000 mV Forward voltage IF = 10 mA VF IF = 40 mA Diode capacitance MAX. VR = 0 V, f = 1 MHz CD 2.9 pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 4 10000 1000 10000 TJ = 175 °C f = 1 MHz 3.5 100 3 1.5 100 1000 1st line 2nd line 2 2nd line IR (µA) 1st line 2nd line 2nd line CD (pF) 2.5 150 °C 10 1000 1 100 0.1 1 0.01 0.5 25 °C 0 10 0 10 20 30 0.001 40 10 0 5 10 15 20 25 30 35 40 VR (V) VR (V) Fig. 1 - Typical Capacitance vs. Reverse Voltage Fig. 3 - Typical Reverse Leakage Current vs. Reverse Voltage Axis Title 1.0 1000 1st line 2nd line 10000 2nd line VF (V) 1.5 TJ = 25 °C 0.5 100 TJ = 175 °C 0 0.001 TJ = 150 °C 0.01 0.1 1 10 100 10 1000 IF (mA) Fig. 2 - Typical Forward Voltage vs. Forward Current Rev. 1.0, 12-Jul-2022 Document Number: 86328 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS40LTH www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: DFN1006-2A Package = Chip Dimension in mm 0.5 ± 0.05 0.25 ± 0.05 0.23 ± 0.05 0.4 Ref. 0.06 Ref. max. 0.05 0.45 ± 0.05 min. 0.1 0.6 ± 0.05 0.3 Ref. 0.04 Ref. (0.07 max.) Orientation identification 1 ± 0.05 Footprint recommendation 1.4 0.3 0.55 0.3 0.4 Document no.: S8-V-3906.04-059 (4) Created - Date: 11-Jul-2018 Rev.5 - Date: 17-Sep-2021 23191 Rev. 1.0, 12-Jul-2022 Document Number: 86328 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS40LTH www.vishay.com Vishay Semiconductors CARRIER TAPE DFN1006-2A max. 5° 1.15 ±0.05 Ø 0.4 ±0.1 Section 0.18 ±0.02 + 0.3 8 - 0.1 2 ±0.05 A 3.5 ±0.05 +0.1 Ø 1.5 0.0 1.75 ±0.1 A-A 4 ±0.1 B B 2 ±0.05 A + 0.05 0.55 - 0.03 B-B S8-V-3906.04-063 (4) created 28.10.2019 + 0.05 0.55 - 0.03 Section max. 5° + 0.06 0.66 - 0.02 OHMS SQ Cummulative tolerances of 10 sprocket holes is ± 0.2 mm surface resistance: 105 - 1011 ORIENTATION IN CARRIER TAPE DFN1006-2A Unreeling direction Cathode marking S8-V-3906.04-064 (4) created 28.10.2019 Top view Rev. 1.0, 12-Jul-2022 Document Number: 86328 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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