BAV21W-E3-18

BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified DESIGN SUPPORT TOOLS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started         Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 m tape), 15K/box PARTS TABLE TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAV19W VR = 100 V BAV19W-E3-08 or BAV19W-E3-18 BAV19W-HE3-08 or BAV19W-HE3-18 A8 Single Tape and reel BAV20W VR = 150 V BAV20W-E3-08 or BAV20W-E3-18 BAV20W-HE3-08 or BAV20W-HE3-18 A9 Single Tape and reel BAV21W VR = 200 V BAV21W-E3-08 or BAV21W-E3-18 BAV21W-HE3-08 or BAV21W-HE3-18 AA Single Tape and reel PART ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Continuous reverse voltage Repetitive peak reverse voltage DC Forward current (1) Rectified current (average) half wave rectification with resist. load (1) Repetitive peak forward current (1) Surge forward current Power dissipation (1) f  50 Hz,  = 180° t < 1 s, Tj = 25 °C PART SYMBOL VALUE UNIT BAV19W BAV20W BAV21W BAV19W BAV20W BAV21W VR VR VR VRRM VRRM VRRM IF 100 150 200 120 200 250 250 V V V V V V mA IF(AV) 200 mA IFRM IFSM Ptot 625 1 410 mA A mW Rev. 1.6, 23-Feb-18 Document Number: 85725 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature SYMBOL VALUE UNIT RthJA 375 °C/W (1) Tj 150 °C Storage temperature range (1) Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Note (1) Valid provided that leads are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Leakage current PART SYMBOL UNIT VF MIN. TYP. 1 V IF = 200 mA VF 1.25 V VR = 100 V BAV19W IR 100 nA VR = 100 V, Tj = 100 °C BAV19W IR 15 μA VR = 150 V BAV20W IR 100 nA VR = 150 V, Tj = 100 °C BAV20W IR 15 μA VR = 200 V BAV21W IR 100 nA VR = 200 V, Tj = 100 °C BAV21W IR 15 μA Dynamic forward resistance IF = 10 mA rf 5  VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100  trr Diode capacitance Reverse recovery time MAX. IF = 100 mA 50 ns I F - Forward Current (mA) 1000 Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 18858 0.2 0.4 0.6 0.8 VF - Forward Voltage (V) Fig. 1 - Forward Current vs. Forward Voltage 1 I O , I F - Admissible Forward Current (A) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0.3 0.2 DC current IF Current (rectif.) I O 0.1 0 0 18859 30 60 90 120 150 Tamb - Ambient Temperature (°C) Fig. 2 - Admissible Forward Current vs. Ambient Temperature Rev. 1.6, 23-Feb-18 Document Number: 85725 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W, BAV20W, BAV21W Ptot - Admissible Power Dissipation (mW) www.vishay.com Vishay Semiconductors 1000 IR(Tj)/IR (25 °C) - Leakage Current 500 400 300 200 100 10 40 80 120 160 0.1 0 200 18862 Tamb - Ambient Temperature (°C) 18860 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 2.0 1.8 CD - Diode Capacitance (pF) 10 10 200 T j = 25 ° C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1 1 40 80 120 160 Tj - Junction Temperature (°C) Fig. 5 - Leakage Current vs. Junction Temperature 100 100 IF - Forward Current (mA) 18861 Reverse Voltage BAV19W VR = 100 V BAV20W VR = 150 V BAV21W VR = 200 V 1 0 0 rf - Dynamic Forward Resistance (Ω) 100 18863 Fig. 4 - Dynamic Forward Resistance vs. Forward Current 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Capacitance vs. Reverse Voltage 100 IFSM (A) 10 1 TJ = 25  °C - Prior to   Surge   0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 tp - Test Pulse (s) Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration Maximum Admissible Values of Square Pulse Rev. 1.6, 23-Feb-18 Document Number: 85725 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.6, 23-Feb-18 Document Number: 85725 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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