BYG23MHM3/TR3

BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. IF(AV) 1.5 A VRRM 1000 V IFSM 30 A IR 5.0 μA MECHANICAL DATA trr 75 ns Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) VF 1.7 V ER 20 mJ TJ max. 150 °C Package SMA (DO-214AC) Diode variations Single Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG23M UNIT BYG23M Device marking code Maximum repetitive peak reverse voltage VRRM 1000 V Average forward current at TA = 65 °C IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +150 °C Revision: 27-Apr-17 Document Number: 89477 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Minimum breakdown voltage IR = 100 μA Maximum instantaneous voltage IF = 1.0 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A SYMBOL BYG23M UNIT VBR 1000 V TJ = 25 °C 1.7 VF (1) TJ = 150 °C TJ = 25 °C 1.35 5 IR TJ = 125 °C 50 trr V µA 75 ns SYMBOL BYG23M UNIT RθJC 25 °C/W Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case (1) 150 RθJA (2) 125 (3) 100 RθJA Typical thermal resistance, junction to ambient RθJA °C/W Notes (1) Mounted on epoxy-glass hard tissue, 17 mm2 35 μm Cu (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 ORDERING INFORMATION (Example) PREFERRED P/N BYG23M-M3/TR BYG23M-M3/TR3 BYG23MHM3_A/H (1) BYG23MHM3_A/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 27-Apr-17 Document Number: 89477 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23M www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 100 Reverse Current (µA) Forward Current (A) VR = VRRM 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.5 10 1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 5.0 50 75 100 125 150 Forward Voltage (V) Junction Temperature (°C) Fig. 1 - Max. Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature 26 1.6 24 VR = VRRM Half Sine-Wave 1.4 1.2 RθJA = 25 K/W 1.0 0.8 0.6 RθJA = 125 K/W 0.4 RθJA = 150 K/W f = 1 MHz TJ = 25 °C 22 Diode Capacitance (pF) Average Forward Current (A) 100 20 18 16 14 12 10 8 6 4 0.2 2 0 0 0 25 50 75 100 125 150 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 160 Reverse Power Dissipation (mW) VR = VRRM RθJA = 125 K/W 140 RθJA = 175 K/W 120 100 100 % 80 60 40 80 % 20 0 25 50 75 100 125 150 Junction Temperature (°C) Fig. 3 - Max. Reverse Power Dissipation vs. Junction Temperature Revision: 27-Apr-17 Document Number: 89477 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23M www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 27-Apr-17 Document Number: 89477 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: BYG23M-M3/TR BYG23M-M3/TR3 BYG23MHM3/TR3 BYG23MHM3/TR BYG23MHM3_A/H BYG23MHM3_A/I