BYQ28EB-150HE3_A/P

BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier TO-220AB FEATURES ITO-220AB 2 3 1 1 BYQ28E, UG10 2 3 BYQ28EF, UGF10 PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 PIN 2 TO-263AB K For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters and polarity protection application. 1 BYQ28EB, UGB10 PIN 2 Power pack Available Glass passivated pallet chip junction Ultrafast recovery times Soft recovery characteristics Low switching losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 2 PIN 1 • • • • • • • K HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V to 200 V IFSM 55 A trr 25 ns VF 0.895 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10BCT UG10CCT UG10DCT BYQ28E-100 BYQ28E-150 BYQ28E-200 UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Working peak reverse voltage VRWM 100 150 200 V VDC 100 150 200 V Maximum DC blocking voltage Maximum average forward rectified current at TC = 100 °C total device per diode IF(AV) 10 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 55 A Non-repetitive peak reverse current per diode at tp = 100 μs IRSM 0.2 A VC 8 kV TJ, TSTG -40 to +150 °C VAC 1500 V Electrostatic discharge capacitor voltage, human body model: C = 250 pF, R = 1.5 k Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Revision: 20-Feb-15 Document Number: 88549 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 10 A Maximum instantaneous forward voltage per diode SYMBOL VF (1) 1.10 TJ = 150 °C V 0.895 TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage UNIT 1.25 TJ = 25 °C IF = 5 A VALUE 10 IR TJ = 100 °C μA 200 Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM trr 25 ns Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns Maximum stored charge per diode IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM Qrr 9 nC Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10 UGF10 UGB10 BYQ28E BYQ28EF BYQ28EB Typical thermal resistance per diode, junction to ambient RJA 50 55 50 Typical thermal resistance per diode, junction to case RJC 4.5 6.7 4.8 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB BYQ28E-200-E3/45 1.80 45 50/tube Tube ITO-220AB BYQ28EF-200-E3/45 1.95 45 50/tube Tube TO-263AB BYQ28EB-200-E3/45 1.77 45 50/tube Tube TO-263AB BYQ28EB-200-E3/81 1.77 81 800/reel Tape and reel TO-220AB BYQ28E-200HE3/45 (1) 1.80 45 50/tube Tube ITO-220AB BYQ28EF-200HE3/45 (1) 1.95 45 50/tube Tube TO-263AB BYQ28EB-200HE3/45 (1) 1.77 45 50/tube Tube TO-263AB (1) 1.77 81 800/reel Tape and reel BYQ28EB-200HE3/81 Note Automotive grade (1) Revision: 20-Feb-15 Document Number: 88549 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Instantaneous Reverse Current (μA) 15 Average Forward Current (A) Resistive or Inductive Load 10 5 TJ = 100 °C 100 10 1 TJ = 25 °C 0.1 0 50 0 150 100 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode Stored Charge/Reverse Recovery Time (nC/ns) 100 Peak Forward Surge Current (A) TJ = 125 °C TC = 105 °C 8.3 ms Single Half Sine-Wave 10 1 10 1 50 at 2 A, 20 A/μs 40 at 5 A, 50 A/μs 30 at 1 A, 100 A/μs 20 at 5 A, 50 A/μs at 1 A, 100 A/μs 10 trr Qrr at 2 A, 20 A/μs 0 25 100 50 75 100 125 Number of Cycles at 60 Hz Junction Temperature (°C) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Reverse Switching Characteristics Per Diode 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Pulse Width = 300 μs 1 % Duty Cycle 10 TJ = 125 °C TJ = 100 °C 1 0.1 0.01 0.2 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 10 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 20-Feb-15 Document Number: 88549 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.104 (2.65) 0.096 (2.45) 0.671 (17.04) 0.651 (16.54) PIN 1 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 3 0.245 (6.22) MIN. 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 7° REF. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.145 (3.68) 0.135 (3.43) 7° REF. 0.076 (1.93) REF. 45° REF. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 20-Feb-15 Document Number: 88549 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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