BYV32-150-E3/45

BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier FEATURES TO-220AB ITO-220AB • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 3 1 2 • High forward surge capability 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 1 BYV32 Series BYVF32 Series PIN 1 PIN 2 PIN 3 CASE PIN 1 PIN 2 • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) PIN 3 D2PAK (TO-263AB) • AEC-Q101 qualified available K - Automotive ordering code: base P/NHE3 (for ITO-220AB and D2PAK (TO-263AB package)) 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 BYVB32 Series PIN 1 K PIN 2 TYPICAL APPLICATIONS HEATSINK For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,....) PRIMARY CHARACTERISTICS IF(AV) 18 A VRRM 50 V to 200 V IFSM 150 A trr 25 ns VF 0.85 V Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test TJ max. 150 °C Polarity: as marked Package TO-220AB, ITO-220AB, D2PAK (TO-263AB) Circuit configuration Common cathode Mounting Torque: 10 in-lbs max.  MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TC = 125 °C IF(AV) 18 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A TJ, TSTG -65 to +150 °C VAC 1500 V Operating storage and temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Revision: 05-Jun-2019 Document Number: 88558 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 20 A F = 5.0 A Maximum DC reverse current  per diode  at rated DC blocking voltage SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT TJ = 25 °C 1.15 VF (1) TJ = 100 °C TJ = 25 °C V 0.85 10 IR TJ = 100 °C μA 600 Maximum reverse recovery time per diode IF = 1 A, VR = 30 V dI/dt = 100 A/μs, Irr = 10 % IRM trr 25 ns Typical junction capacitance  per diode 4.0 V, 1 MHz CJ 45 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYV BYVF BYVB UNIT RJC 1.6 5.0 1.6 °C/W Typical thermal resistance from junction to case per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB BYV32-200-E3/45 1.85 45 50/tube Tube ITO-220AB BYVF32-200-E3/45 1.97 45 50/tube Tube TO-263AB BYVB32-200-E3/45 1.35 45 50/tube Tube TO-263AB BYVB32-200-E3/81 1.35 81 800/reel Tape and reel ITO-220AB BYVF32-200HE3_A/P (1) 1.97 P 50/tube Tube TO-263AB BYVB32-200HE3_A/P (1) 1.35 P 50/tube Tube 1.35 I 800/reel Tape and reel TO-263AB BYVB32-200HE3_A/I (1) Note (1) AEC-Q101 qualified, available in ITO-220AB and TO-263AB package Revision: 05-Jun-2019 Document Number: 88558 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 18 Instantaneous Reverse Leakage Current (μA) Average Forward Rectified Current (A) 20 16 12 8 4 Resistive or Inductive Load 0 100 10 1 TC = 25 °C 0.1 0 25 50 75 100 125 150 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Case Ambient Temperature (°C) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 1 - Forward Current Derating Curve 150 60 TJ = 150 °C 10 ms Single Half Sine-Wave 125 Junction Capacitance (pF) Peak Forward Surge Current (A) TC = 100 °C 100 75 50 25 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 50 40 30 20 10 0 1 100 10 Number of Cycles at 50 Hz 1 10 100 Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 25 °C 1 0.1 Pulse Width = 300 μs 1 % Duty Cycle 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Revision: 05-Jun-2019 Document Number: 88558 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.145 (3.68) 0.135 (3.43) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 7° REF. 0.076 (1.93) REF. 45° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 1 2 3 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 05-Jun-2019 Document Number: 88558 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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