DG2535E, DG2733E
www.vishay.com
Vishay Siliconix
0.3 , Low Voltage Dual SPDT Analog Switches
DESCRIPTION
FEATURES
The DG2535E and DG2733E are low voltage, low
on-resistance, dual single-pole/double-throw (SPDT)
monolithic CMOS analog switches designed for high
performance switching of analog signals. Combining
low-power, high speed, low on-resistance, and small
package size, the DG2535E and DG2733E are ideal for
portable and battery powered applications.
• 1.65 V to 5.5 V single power operation
The DG2535E and DG2733E have an operation range from
1.65 V to 5.5 V single supply. The DG2535E has two
separate control pins for independent control of the two
SPDT switches. The DG2733E has an EN pin to enable the
device when the logic is high.
• 0.3 typ. switch on resistance at V+ = 5 V
• Fast switching:
tON = 55 ns at 2.7 V, tOFF = 15 ns at 2.7 V
• Latch-up current > 400 mA (JESD78)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Low switch resistance
• Low voltage logic compatible
The DG2535E and DG2733E have guaranteed 1.65 V logic
compatible, allowing easy interface with low voltage DSP or
MCU control logic.
• Wide operation voltage range
The switches conduct signals within the power rails equally
well in both directions when on, and blocks up to the power
supply level when off. Break-before-make is guaranteed.
APPLICATIONS
The DG2535E and DG2733E are built on Vishay Siliconix's
sub micron CMOS low voltage process technology and
provide greater than 400 mA latch-up protection, as tested
per JESD78A.
• Battery operated systems
The DG2535E and DG2733E are available in lead (Pb)-free
10-lead DFN and SOIC packages.
• Fast switching time
• Audio and video signal routing
• Relay replacement
• Automatic test equipment
• Process control and automation
• Data acquisition systems
• Meters and instruments
• Medical and healthcare systems
• PCMCIA cards
• Communication systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2535E
DG2733E
V+
1
10
NO2
NO1
2
9
COM2
COM1
3
8
IN2
IN1
4
7
NC2
NC1
5
6
GND
Top View
TRUTH TABLE DG2535E
V+
1
10
NO2
NO1
2
9
COM2
COM1
3
8
EN
IN
4
7
NC2
NC1
5
6
GND
Top View
TRUTH TABLE DG2733E
IN1, IN2
NC1, NC2
NO1, NO2
IN
EN
NC1, NC2
NO1, NO2
0
ON
OFF
0
1
ON
OFF
1
OFF
ON
1
1
OFF
ON
0
0
OFF
OFF
1
0
OFF
OFF
S17-0156-Rev. A, 30-Jan-17
Document Number: 75646
1
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2535E, DG2733E
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Vishay Siliconix
ORDERING INFORMATION
TEMP. RANGE
PACKAGE
MSOP10
-40 °C to +85 °C
DFN-10
PART NUMBER
DG2535EDQ-T1-GE3
DG2733EDQ-T1-GE3
DG2535EDN-T1-GE4
DG2733EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
V+
Reference to GND
IN, COM, NC, NO a
-0.3 V to (V+ + 0.3)
Current (any terminal except NO, NC or COM)
± 300
Peak current (pulsed at 1 ms, 10 % duty cycle)
Latch up current
miniQFN10
V
mA
± 500
Storage temperature (D suffix)
Power dissipation (packages)
UNIT
30
Continuous current (NO, NC, or COM)
b
LIMIT
-0.3 V to +6 V
c
-65 to +150
°C
208
mW
mA
JESD78A
> 400
ESD - HBM
ANSI / ESDA / JEDEC® JS-001
> 5000
ESD - CDM
JESD22-C101
> 1000
ESD - MM
JESD22-A115
> 200
V
Notes
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4 mW/C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0156-Rev. A, 30-Jan-17
Document Number: 75646
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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DG2535E, DG2733E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, ± 10 %,VIN = 0.4 V or 1.65 V e
TEMP. a
RDS(on)
LIMITS
-40 °C to +85 °C
UNIT
MIN. b
TYP. c
MAX. b
Full
0
-
V+
Room
-
0.5
0.7
Full
-
0.6
-
Room
-
Full
-
0.4
-
Room
-
0.06
0.08
Room
-
-
0.15
Analog Switch
Analog signal range d
Vanalog
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 1.5 V
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 0.5 V
On-resistance
RDS(on)
V+ = 2.7 V, INO/NC = 100 mA, VCOM = 1.5 V
V+ = 5.5 V, INO/NC = 100 mA, VCOM = 0.9 V
V+ = 5.5 V, INO/NC = 100 mA, VCOM = 2.5 V
V+ = 5.5 V, INO/NC = 100 mA, VCOM = 0.9 V
V+ = 5.5 V, INO/NC = 100 mA, VCOM = 2.5 V
RON match
d
RON resistance flatness d
Switch off leakage
current
RON
RON
flatness
INO/NC(off)
ICOM(off)
Channel-on leakage
current
ICOM(on)
V+ = 2.7 V, INO/NC = 100 mA,
VCOM = 0.5 V, 1.5 V
V+ = 5.5 V, INO/NC = 100 mA,
VCOM = 0.9 V, 2.5 V
V+ = 2.7 V, INO/NC = 100 mA,
VCOM = 0.5 V, 1.5 V
V+ = 5 V, VNO/NC = 0.5 V / 4.5 V,
VCOM = 4.5 V / 0.5 V
V+ = 5 V, VNO/NC = VCOM = 4.5 V / 0.5 V
0.3
0.25
V
0.5
Room
-8
-
8
Full
-50
-
50
Room
-8
-
8
Full
-50
-
50
Room
Full
-10
-
10
-50
-
50
nA
Digital Control
Input high voltage
VINH
Input low voltage
VINL
Input high voltage
VINH
Input low voltage
VINL
Input capacitance
CIN
Input current
IINL or IINH
V+ = 3 V
V+ = 5 V
VIN = 0 or V+
Full
1.65
-
-
Full
-
-
0.4
Full
1.8
-
0.6
V
Full
-
-
Full
-
6
-
pF
Full
-1
-
1
μA
Room
1
15
-
Room
-
28
78
Dynamic Characteristics
Break-Before-Make time e
Turn-on time e
tBBM
tON
Turn-off time e
tOFF
Off-isolation d
OIRR
Crosstalk d
XTALK
3 dB bandwidth d
NO, NC off capacitance d
Channel on capacitance d
V+ = 3.6 V, VNO, VNC = 1.5 V, RL = 50 ,
CL = 35 pF
Full
-
-
80
Room
-
13
58
60
Full
RL = 50 , CL = 5 pF, f = 100 kHz
Room
RL = 50 , CL = 5 pF
Room
CNO(off)
CNC(off)
CNO(on)
VIN = 0 V, or V+, f = 1 MHz
Room
CNC(on)
-
-
-
-70
-
-
-90
-
-
120
-
-
40
-
-
40
-
-
120
-
-
120
-
1.65
-
5.5
ns
dB
MHz
pF
Power Supply
Power supply range
V+
-
V
Full
1
μA
Power supply current
I+
VIN = 0 or V+
Notes
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
S17-0156-Rev. A, 30-Jan-17
Document Number: 75646
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
4.0
RON - On-Resistance (Ω)
3.0
TA = +25 °C
INO/NC = 100mA
V+ = +1.5 V
V+ = +1.8 V
V+ = +3.0 V
2.5
V+ = +2.7 V
2.0
V+ = +3.3 V
V+ = +3.6 V
V+ = +4.3 V
1.5
V+ = +5.5 V
1.0
0.7
RON - On-Resistance (Ω)
3.5
0.8
0.5
0.6
0.5
0.4
+ 25 °C
0.3
- 40 °C
0.2
0.1
0.0
+ 85 °C
V+ = +2.7 V
IS = 100 mA NC/NO
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
RON vs. VCOM and Supply Voltage
RON vs. Analog Voltage and Temperature
0.5
5
V+ = +5.5V
IN = GND
4
+ 85 °C
0.3
0.2
+ 25 °C
- 40 °C
I+ - Supply Current (nA)
RON - On-Resistance (Ω)
0.4
V+ = +5.5V
IN = V+
3
2
V+ = +3V
IN = GND
1
0.1
V+ = +5.5 V
IS = 100 mA NC/NO
V+ = +3V
IN = V+
0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCOM - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
S17-0156-Rev. A, 30-Jan-17
-40
-20
0
20
40
60
80
100
Temperature (°C)
Supply Current vs. Temperature
Document Number: 75646
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100 000
40
V+ = +3.6 V
tON(NC)
tON, tOFF - Switching Time (ns)
Leakage Current (pA)
35
10 000
INC(OFF)
ICOM(OFF)
1000
ICOM(ON)
30
tON(NO)
25
20
tOFF(NO)
15
10
5
tOFF(NC)
V+= + 5 V
100
-40
0
-20
0
20
40
60
80
100
-40
0
20
40
60
80
Temperature (°C)
Leakage Current vs. Temperature
Switching Time vs. Temperature
100
10
10 000
0
V+ = +3.6V
TA = +25°C
Loss
- 10
Loss, OIRR, XTALK (dB)
1000
I+ - Supply Current (μA)
-20
Temperature (°C)
100
10
1
- 20
V+ = +3V
RL = 50 Ω
- 30
- 40
OIRR
- 50
- 60
XTALK
- 70
- 80
0.1
- 90
- 100
0.01
- 110
10
100
1000
100K
10M
10K
100K
1M
Input Switching Frequency (Hz)
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
1.6
10m
1.4
1m
VIH = -40 °C
T = 25 °C
100μ
I+ - Supply Current (A)
VT - Switching Threshold (V)
1G
Frequency (Hz)
Supply Current vs. Switching Frequency
1.2
100M
10M
1M
1.0
VIL = 85 °C
0.8
0.6
0.4
V+ = 4.3V
10μ
1μ
V+ = 3.6V
100n
10n
1n
-40 °C to +85 °C
0.2
100p
0
10p
V+ = 2.0V
V+ = 3.0V
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
S17-0156-Rev. A, 30-Jan-17
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VIN (V)
Supply Current vs. VIN
Document Number: 75646
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Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
NO or NC
Switch
Input
COM
VINH
50%
tr < 5 ns
tf < 5 ns
VINL
Switch Output
VOUT
0.9 x VOUT
Logic
Input
Switch
Output
IN
RL
50 Ω
GND
CL
35 pF
0V
tON
tOFF
0V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
(R L
RL
+ R
ON
)
Fig. 1 - Switching Time
V+
Logic
Input
V+
VNO
VNC
COM
NO
VO
VINH
tr < 5 ns
tf < 5 ns
VINL
NC
RL
50Ω
IN
CL
35 pF
GND
VNC = VNO
VO
90%
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Fig. 2 - Break-Before-Make Interval
S17-0156-Rev. A, 30-Jan-17
Document Number: 75646
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Vishay Siliconix
TEST CIRCUITS
V+
Rgen
Δ VOUT
V+
NC or NO
VOUT
COM
VOUT
+
IN
Vgen
IN
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Fig. 3 - Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
0V, 2.4 V
Meter
COM
COM
IN
0 V, 2.4 V
RL
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
GND
Analyzer
f = 1 MHz
VCOM
Off Isolation = 20 log V
NO / NC
Fig. 4 - Off-Isolation
Fig. 5 - Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75646.
S17-0156-Rev. A, 30-Jan-17
Document Number: 75646
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Package Information
Vishay Siliconix
MSOP:
10−LEADS
JEDEC Part Number: MO-187, (Variation AA and BA)
(N/2) Tips)
2X
5
A B C 0.20
N N-1
0.60
0.48 Max
Detail “B”
(Scale: 30/1)
Dambar Protrusion
E
1 2
0.50
N/2
0.60
0.08 M C B S
b
A S
7
Top View
b1
e1
With Plating
e
A
See Detail “B”
c1
0.10 C
-H-
A1
D
6
Seating Plane
c
Section “C-C”
Scale: 100/1
(See Note 8)
Base Metal
-A-
3
See Detail “A”
Side View
0.25
BSC
C
Parting Line
0.07 R. Min
2 Places
C
ς
A2
Seating Plane
0.05 S
E1
-B-
L 4
T
-C-
3
0.95
End View
Detail “A”
(Scale: 30/1)
NOTES:
1.
2.
Dimensioning and tolerances per ANSI.Y14.5M-1994.
3.
Dimensions “D” and “E1” do not include mold flash or protrusions, and are
measured at Datum plane -H- , mold flash or protrusions shall not exceed
0.15 mm per side.
4.
Dimension is the length of terminal for soldering to a substrate.
5.
Terminal positions are shown for reference only.
6.
Formed leads shall be planar with respect to one another within 0.10 mm at
seating plane.
7.
N = 10L
Die thickness allowable is 0.203"0.0127.
The lead width dimension does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08 mm total in excess of the lead width
dimension at maximum material condition. Dambar cannot be located on the
lower radius or the lead foot. Minimum space between protrusions and an
adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.
8.
Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.
9.
Controlling dimension: millimeters.
10. This part is compliant with JEDEC registration MO-187, variation AA and BA.
11. Datums -A- and -B- to be determined Datum plane -H- .
12. Exposed pad area in bottom side is the same as teh leadframe pad size.
Document Number: 71245
12-Jul-02
MILLIMETERS
Dim
Min
Nom
Max
A
A1
A2
b
b1
c
c1
D
E
E1
e
e1
L
N
T
-
-
1.10
0.05
0.10
0.15
0.75
0.85
0.95
0.17
-
0.27
8
0.17
0.20
0.23
8
0.13
-
0.23
0.15
0.18
0.13
3.00 BSC
Note
3
4.90 BSC
2.90
3.00
3.10
3
0.70
4
0.50 BSC
2.00 BSC
0.40
0.55
10
0_
4_
5
6_
ECN: T-02080—Rev. C, 15-Jul-02
DWG: 5867
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Package Information
Vishay Siliconix
DFN-10 LEAD (3 X 3)
D
e
Terminal Tip
3
D/2
3
NXb
0.10
M
C
A
B
5
0.15
C
E2
NXL
Exposed Pad
Index Area
D/2 E/2
D2
0.15
5
BOTTOM VIEW
// 0.10
E/2
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
2x
Index Area
D/2 E/2
C
E
2x
TOP VIEW
C
A
4
NX
0.08
SEATING
PLANE
C
A1
A3
SIDE VIEW
MILLIMETERS
NOTES:
1.
All dimensions are in millimeters and inches.
2.
N is the total number of terminals.
3.
4.
5.
Dimension b applies to metallized terminal and is measured
between 0.15 and 0.30 mm from terminal tip.
Coplanarity applies to the exposed heat sink slug as well as the
terminal.
The pin #1 identifier may be either a mold or marked feature, it
must be located within the zone iindicated.
INCHES
Dim
Min
Nom
Max
Min
Nom
Max
A
0.80
0.90
1.00
0.031
0.035
0.039
A1
0.00
0.02
0.05
0.000
0.001
0.002
A3
b
D
D2
E
E2
e
L
0.20 BSC
0.18
0.23
0.008 BSC
0.30
0.007
2.48
0.087
3.00 BSC
2.20
2.38
1.64
0.40
0.094
0.098
0.118 BSC
1.74
0.059
0.50 BSC
0.30
0.012
0.118 BSC
3.00 BSC
1.49
0.009
0.065
0.069
0.020 BSC
0.50
0.012
0.016
0.020
*Use millimeters as the primary measurement.
ECN: S-42134—Rev. A, 29-Nov-04
DWG: 5943
Document Number: 73181
29-Nov-04
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
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Document Number: 91000
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