DG411L, DG412L, DG413L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
DESCRIPTION
FEATURES
The DG411L, DG412L, DG413L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG411, DG412, DG413 with improved performance.
• 2.7- thru 12 V single supply or
± 3- thru ± 6 dual supply
• On-resistance - RDS(on): 17
• Fast switching - tON: 19 ns
•
tOFF: 12 ns
• TTL, CMOS compatible
• Low leakage: 0.25 nA
• 2000 V ESD protection
Using BiCMOS wafer fabrication technology allows the
DG411L, DG412L, DG413L to operate on single and dual
supplies. Single supply voltage ranges from 3 to 12 V while
dual supply operation is recommended with ± 3 to ± 6 V.
Combining high speed (tON: 19 ns), flat RDS(on) over the
analog signal range (5 ), minimal insertion lose (- 3 dB at
280 MHz), and excellent crosstalk and off-isolation
performance (- 50 dB at 50 MHz), the DG411L, DG412L,
DG413L are ideally suited for audio and video signal
switching.
The DG411L and DG412L respond to opposite control logic
as shown in the Truth Table. The DG413L has two normally
open and two normally closed switches.
Available
RoHS*
COMPLIANT
BENEFITS
•
•
•
•
Widest dynamic range
Low signal errors and distortion
Break-before-make switching action
Simple interfacinge
APPLICATIONS
•
•
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
SDSL, DSLAM
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413L
Dual-In-Line, TSSOP and SOIC
DG411L, DG412L
Dual-In-Line, TSSOP and SOIC
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Top View
Top View
TRUTH TABLE
TRUTH TABLE
Logic
DG411L
DG412L
Logic
SW1, SW4
0
ON
OFF
0
OFF
ON
1
OFF
ON
1
ON
OFF
Logic “0” 0.8 V
Logic “1” 2.4 V
SW2, SW3
Logic “0” 0.8 V
Logic “1” 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
www.vishay.com
1
DG411L, DG412L, DG413L
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG411L, DG412L
DG411LDY
DG411LDY-E3
DG411LDY-T1
DG411LDY-T1-E3
16-Pin Narrow SOIC
DG412LDY
DG412LDY-E3
DG412LDY-T1
DG412LDY-T1-E3
- 40 °C to 85 °C
DG411LDQ
DG411LDQ-E3
DG411LDQ-T1
DG411LDQ-T1-E3
16-Pin TSSOP
DG412LDQ
DG412LDQ-E3
DG412LDQ-T1
DG412LDQ-T1-E3
DG413L
16-Pin Narrow SOIC
DG413LDY
DG413LDY-E3
DG413LDY-T1
DG413LDY-T1-E3
16-Pin TSSOP
DG413LDQ
DG413LDQ-E3
DG413LDQ-T1
DG413LDQ-T1-E3
- 40 °C to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
V+ to VGND to VVL
- 0.3 to 13
7
(GND - 0.3) to (V+) + 0.3
- 0.3 to (V+) + 0.3
or 30 mA, whichever occurs first
30
INa, VS, VD
Continuous Current (Any terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Packages)
Unit
b
100
(DQ, DY Suffix)
- 65 to 125
(AK Suffix)
- 65 to 150
16-Pin TSSOPc
450
16-Pin SOICd
650
16-Pin CerDIPe
900
V
mA
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 75 °C
d. Derate 7.6 mW/°C above 75 °C
e. Derate 12 mW/°C above 75 °C.
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2
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONSa (Single Supply 12 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Temp.b
V+ = 10.8 V, V- = 0 V
IS = 10 mA, VD = 2/9 V
Room
Full
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
0
12
0
12
V
30
40
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
VANALOG
RDS(on)
Full
IS(off)
Switch Off Leakage Current
VD = 1/11 V, VS = 11/1 V
ID(off)
Channel On Leakage
Current
20
30
45
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
ID(on)
VS = VD = 11/1 V
Input Current, VIN Low
IIL
VIN under test = 0.8 V
Full
Input Current, VIN High
IIH
VIN under test = 2.4 V
Full
Turn-On Time
tON
Turn-Off Time
tOFF
RL = 300 , CL = 35 pF
VS = 5 V, see figure 2
nA
Digital Control
0.01
- 1.5
1.5
-1
1
- 1.5
1.5
-1
1
µA
Dynamic Characteristics
Break-Before-Make
Time Delay
Charge Injectione
Room
Full
20
50
70
50
60
Room
Full
12
30
48
30
40
6
tD
DG413L only, VS = 5 V
RL = 300 , CL = 35 pF
Room
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
5
Room
71
Room
95
Room
5
Off-Isolatione
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel-On Capacitancee
RL = 50 , CL = 5 pF , f = 1 MHz
f = 1 MHz
Room
6
CD(on)
Room
15
Positive Supply Current
I+
Room
Full
0.02
Negative Supply Current
I-
Room
Full
- 0.002
Logic Supply Current
IL
Room
Full
0.002
IGND
Room
Full
- 0.002
ns
pC
dB
pF
Power Supplies
VIN = 0 or 5 V
Ground Current
1
7.5
-1
- 7.5
1
5
-1
-5
1
7.5
-1
- 7.5
1
5
µA
-1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
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3
DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONSa (Dual Supply ± 5 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Temp.b
V+ = 5 V, V- = - 5 V
IS = 10 mA, VD = ± 3.5 V
Room
Full
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Ty.pc
Min.d
Max.d
Min.d
5
-5
Max.d
Unit
5
V
33
40
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
Switch Off
Leakage Currentg
VANALOG
RDS(on)
IS(off)
ID(off)
Full
V+ = 5.5 , V- = - 5.5 V
VD = ± 4.5 V, VS = ± 4.5 V
-5
20
33
45
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
-1
- 15
1
15
-1
- 10
1
10
ID(on)
V+ = 5.5 V, V- = - 5.5 V
VS = VD = ± 4.5 V
Room
Full
Input Current, VIN Lowe
IIL
VIN under test = 0.8 V
Full
0.05
- 1.5
1.5
-1
1
Input Current, VIN Highe
IIH
VIN under test = 2.4 V
Full
0.05
- 1.5
1.5
-1
1
Turn-On Timee
tON
Room
Full
21
50
70
50
60
Turn-Off Timee
tOFF
RL = 300 , CL = 35 pF
VS = ± 3.5 V, see figure 2
Room
Full
16
35
50
35
40
6
Channel On
Leakage Currentg
nA
Digital Control
µA
Dynamic Characteristics
Break-Before-Make Time
Delaye
Charge Injectione
tD
DG413L only, VS = 3.5 V
RL = 300 , CL = 35 pF
Room
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
5
Room
68
Room
85
Off Isolatione
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitancee
RL = 50 , CL = 5 pF , f = 1 MHz
Room
9
Room
9
CD(on)
Room
20
Positive Supply Currente
I+
Room
Full
0.03
Negative Supply Currente
I-
Room
Full
- 0.002
Logic Supply Currente
IL
Room
Full
0.002
IGND
Room
Full
- 0.002
f = 1 MHz
ns
pC
dB
pF
Power Supplies
Ground Currente
VIN = 0 or 5 V
1
7.5
-1
- 7.5
1
5
-1
-5
1
7.5
-1
- 7.5
1
5
µA
-1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
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Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONSa (Single Supply 5 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Temp.b
V+ = 4.5 V
IS = 5 mA, VD = 1 V, 3.5 V
Room
Full
35
Room
Hot
27
50
90
50
60
Room
Hot
15
30
55
30
40
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
5
5
V
50
88
50
75
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistancee
VANALOG
RDS(on)
Full
Dynamic Characteristics
Turn-On Timee
tON
Turn-Off Timee
tOFF
RL = 300 , CL = 35 pF
VS = 3.5 V, see figure 2
Break-Before-Make Time
Delaye
tD
DG413L only, VS = 3.5 V
RL = 300 , CL = 35 pF
Room
6
Charge Injectione
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
0.5
ns
pC
Power Supplies
Positive Supply Currente
I+
Room
Hot
0.02
Negative Supply Currente
I-
Room
Hot
- 0.002
Logic Supply Currente
IL
Room
Hot
0.002
IGND
Room
Hot
- 0.002
Ground Currente
VIN = 0 or 5 V
1
7.5
-1
- 7.5
1
5
-1
-5
1
7.5
-1
- 7.5
1
5
µA
-1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
www.vishay.com
5
DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONSa (Single Supply 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
VL = 3 V, VIN = 0.4 Vf
Temp.b
V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
Room
Full
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
3
0
Max.d
Unit
3
V
80
100
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Switch Off
Leakage Currentg
VANALOG
RDS(on)
IS(off)
ID(off)
Full
V+ = 3.3 , V- = 0 V
VD = 1, 2 V, VS = 2, 1 V
0
65
80
115
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
-1
- 15
1
15
-1
- 10
1
10
ID(on)
V+ = 3.3 V, V- = 0 V
VS = VD = 1, 2 V
Room
Full
Input Current, VIN Low
IIL
VIN under test = 0.4 V
Full
0.005
- 1.5
1.5
-1
1
Input Current, VIN High
IIH
VIN under test = 2.4 V
Full
0.005
- 1.5
1.5
-1
1
Turn-On Time
tON
Room
Full
50
85
150
85
110
Turn-Off Time
tOFF
RL = 300 , CL = 35 pF
VS = 1.5 V, see figure 2
Room
Full
30
60
100
60
85
6
Channel On
Leakage Currentg
nA
Digital Control
µA
Dynamic Characteristics
Break-Before-Make Time
Delay
Charge Injectione
tD
DG413L only, VS = 1.5 V
RL = 300 , CL = 35 pF
Room
Q
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
1
Room
68
Room
85
Off Isolatione
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitancee
CD(on)
RL = 50 , CL = 5 pF , f = 1 MHz
f = 1 MHz
Room
6
Room
6
Room
20
ns
pC
dB
pF
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
DG411L, DG412L, DG413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
50
80
R DS(on) - On-Resistance (Ω)
R DS(on) - On-Resistance ()
V+ = 5 V
V- = 0 V
VCC = 2.7 V
60
40
VCC = 4.5 V
VCC = 12 V
20
40
A
B
30
C
D
20
A = 125 °C
B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
10
0
0
0
3
6
9
12
0
1
2
Drain Voltage (V)
3
4
5
Drain Voltage (V)
RDS(on) vs. Drain Voltage and Temperature
(Single Supply)
RDS(on) vs. Drain Voltage (Single Supply)
35
0.30
V+ = 5 V
V- = 0 V
V± = ± 5 V
0.25
28
Supply Current (nA)
R DS(on) - On-Resistance (Ω)
E
21
14
A = 125 °C
B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
7
-3
0.15
0.10
0.05
0
-5
0.20
-1
1
3
0.00
- 50
5
- 25
0
25
50
75
100
125
Drain Voltage (V)
Temperature (°C)
RDS(on) vs. Drain Voltage and Temperature
(Dual Supply)
Supply Current vs. Temperature
30
150
50
V+ = 5 V
V- = - 5 V
40
Switching Speed (nS)
I S , I D Leakage Current (pA)
20
10
ID(on)
0
ID(off)
IS(off)
- 10
30
20
tOFF
10
- 20
- 30
-5
tON
0
-3
-1
1
3
5
VD or V S - Drain-Source Voltage
Leakage Current vs. Analog Voltage (Dual Supply)
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
0
3
6
9
12
15
V+ - Positive Supply Voltage (V)
Switching Time vs. Single Supply
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7
DG411L, DG412L, DG413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
45
6
4
27
Charge Injection (Q)
Switching Speed (nS)
36
tON
tOFF
18
VSUPPLY = ± 5 V
2
VSUPPLY = 3 V
0
9
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-2
-5
6.5
-3
-1
V± Positive Supply Voltage (V)
Switching Time vs. Dual Supply
3
5
Charge Injection vs. Drain Voltage
1.8
7
1.5
6
Capacitance (pF)
VTH - Threshold (V)
1
Drain Voltage (V)
1.2
0.9
0.6
CD(off) at VCC = 5 V
CD(off) at VCC = 12 V
5
CD(off) at VCC = 3 V
4
3
2
0.3
1
0.0
0
0
2
4
6
8
10
12
14
0
3
V ± Positive Supply Voltage (V)
6
9
12
VD - Drain Voltage (V)
Input Threshold vs. Single Supply Voltage
Drain Capacitance vs. Drain Voltage
(Single Supply)
25
10
VSUPPLY = ± 5 V
- 30
15
Loss (dB)
Capacitance (pF)
- 10
CD(on)
20
10
- 50
V+ = 3 V
V- = 0 V
RL = 50 Ω
Insertion Loss
- 3 dB = 280 MHz
Off Isolation
- 70
Crosstalk
CS/CD(off)
5
- 90
0
-5
- 110
-3
-1
1
3
Analog Voltage (V)
Capacitance vs. Analog Signal
(Dual Supply)
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8
5
0.1
1
10
100
1000
Frequency (MHz)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (Single Supply)
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
DG411L, DG412L, DG413L
Vishay Siliconix
SCHEMATIC DIAGRAM (Typical Channel)
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
Figure 1.
TEST CIRCUITS
VL
V+
Logic
Input
tr < 20 ns
tf < 20 ns
3V
50%
0V
VL
VS
V+
S
tON
D
Switch
Input*
VO
VS
VO
90 %
IN
RL
300 Ω
V-
GND
CL
35 pF
Switch
Output
Switch
Input*
V-
0V
tON
90 %
VO
- VS
CL (includes fixture and stray capacitance)
RL
VO = V S
Note:
RL + rDS(on)
Logic input waveform is inverted for switches that
have the opposite logic sense control
Figure 2. Switching Time
VL
V+
Logic
Input
VS1
S1
D1
VS2
Switch
Output
IN2
RL1
300 Ω
V-
GND
90 %
VO2
D2
S2
50 %
0V
VS1
VO1
VO1
IN1
3V
RL2
300 Ω
CL2
35 pF
CL1
35 pF
Switch
Output
0V
VS2
VO2
0V
90 %
tD
tD
VCL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG413L)
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
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9
DG411L, DG412L, DG413L
Vishay Siliconix
TEST CIRCUITS
VL
ΔVO
V+
VO
VL
Rg
V+
S
INX
D
IN
Vg
OFF
VO
ON
OFF
CL
10 nF
3V
GND
VINX
V-
OFF
ON
Q = ΔVO x CL
OFF
INX dependent on switch configuration Input polarity determined
by sense of switch.
Figure 4. Charge Injection
VL
V+
C
C
VL
V+
D1
S1
VS
Rg = 50 Ω
50 Ω
IN1
0 V, 2.4 V
S2
D2
VO
NC
0 V, 2.4 V
RL
IN2
GND
XTALK Isolation = 20 log
V-
C
VS
VO
V-
C = RF bypass
Figure 5. Crosstalk
VL
V+
C
VL
C
VO
D
VL
Rg = 50 Ω
0 V, 2.4 V
V+
C
V+
S
VS
VL
C
V+
S
RL
50 Ω
IN
Meter
IN
GND
V-
HP4192A
Impedance
Analyzer
or Equivalent
C
0 V, 2.4 V
D
VOff Isolation = 20 log
GND
V-
C
VS
VO
C = RF Bypass
Figure 6. Off-Isolation
V-
Figure 7. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71397.
www.vishay.com
10
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
www.vishay.com
1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
www.vishay.com
1
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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