DG441L, DG442L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
DESCRIPTION
FEATURES
The DG441L, DG442L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG441L, DG442L with improved performance.
• Halogen-free according to IEC 61249-2-21
Definition
• 2.7 V thru 12 V single supply or
± 3 V thru ± 6 V dual supply
Using BiCMOS wafer fabrication technology allows the
DG441L, DG442L to operate on single and dual supplies.
Single supply voltage ranges from 3 V to 12 V while dual
supply operation is recommended with ± 3 V to ± 6 V.
• On-resistance - RDS(on): 17
• Fast switching - tON: 20 ns
- tOFF: 12 ns
• TTL, CMOS compatible
• Low leakage: 0.25 nA
• 2000 V ESD protection
• Compliant to RoHS Directive 2002/95/EC
Combining high speed (tON: 20 ns), flat RDS(on) over the
analog signal range (5 ), minimal insertion lose (- 3 dB at
280 MHz), and excellent crosstalk and off-isolation
performance (- 50 dB at 50 MHz), the DG441L, DG442L are
ideally suited for audio and video signal switching.
BENEFITS
The DG441L, DG442L responds to opposite control logic as
shown in the Truth Table open and two normally closed
switches.
•
•
•
•
Widest dynamic range
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
APPLICATIONS
•
•
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
SDSL, DSLAM
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line, TSSOP and SOIC
TRUTH TABLE
IN1
16
1
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
Logic
DG441L
DG442L
0
On
Off
1
Off
On
Logic "0" 0.8 V
Logic "1" 2.4 V
ORDERING INFORMATION
Temp. Range
GND
5
DG441L/442L
12
NC
Top View
S4
D4
6
7
16-pin TSSOP
- 40 °C to 85 °C
11
10
Package
S3
D3
16-pin narrow
SOIC
16-pin CerDIP
- 55 °C to 125 °C
IN4
8
Document Number: 71399
S11-1066–Rev. E, 30-May-11
9
IN3
LCC-20
Part Number
DG441LDQ-T1-E3
DG442LDQ-T1-E3
DG441LDY-T1-E3
DG442LDY-T1-E3
DG441LAK, DG441LAK/883
DG442LAK, DG442LAK/883
DG441LAZ/883
DG442LAZ/883
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DG441L, DG442L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
V + to V GND to V - A
Limit
Unit
- 0.3 to 13
7
GND - 0.3 to (V +) + 0.3
or 30 mA, whichever occurs first
30
100
Digital Inputsa VS, VD
Continuous Current (any terminal)
Current, S or D (pulsed 1 ms, 10 % duty cycle)
Storage Temperature
(DQ, DY suffix)
- 65 to 125
(AK suffix)
- 65 to 150
16-pin TSSOPc
Power Dissipation (Packages)
b
16-pin narrow Body
V
mA
°C
450
SOICd
mW
650
16-pin CerDIPe
900
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 75 °C
d. Derate 7.6 mW/°C above 75 °C
e. Derate 12 mW/°C above 75 °C.
SPECIFICATIONSa (Single Supply 12 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V + = 12 V, V - = 0 V
VIN = 2.4 V, 0.8 Vf
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b Typ.c
Min.d
Max.d
Min.d
Max.d
0
12
0
12
Unit
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
On-Resistance Match
Between Channelse
Full
RDS(on)
V + = 10.8 V, V - = 0 V
IS = 10 mA, VD = 2/9 V
Room
Full
20
30
45
30
40
RDS(on)
IS = 10 mA, VD = 9 V
Room
0.1
0.5
0.5
IS(off)
VD = 1/11 V, VS = 11/1 V
Switch Off Leakage Current
ID(off)
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
-1
- 15
1
15
-1
- 10
1
10
- 1.5
1.5
-1
1
- 1.5
1.5
-1
1
ID(on)
VS = VD = 11/1 V
Room
Full
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
Full
Input Current, VIN High
IIH
VIN Under Test = 2.4 V
Full
Channel On Leakage Current
V
nA
Digital Control
0.01
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectione
Q
Off Isolatione
OIRR
Channel-to-Channel Crosstalke
XTALK
Source Off Capacitancee
CS(off)
e
CD(off)
Drain Off Capacitance
e
Channel On Capacitance
RL = 300 , CL = 35 pF
VS = 5 V, see figure 2
Vg = 0 V, Rg = 0 , CL = 10 nF
RL = 50 , CL = 5 pF , f = 1 MHz
f = 1 MHz
Room
Full
20
60
80
60
70
Room
Full
12
35
50
35
45
Room
5
Room
71
Room
95
Room
5
pC
dB
Room
6
Room
15
I+
Full
0.03
I-
Room
Full
0.002
-1
- 7.5
-1
-5
Full
0.002
- 1.5
-1
CD(on)
ns
pF
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
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2
IGND
VIN = 0 V or 12 V
1.5
1
µA
Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
SPECIFICATIONSa (Dual Supply ± 5 V)
Parameter
Test Conditions
Unless Otherwise Specified
V + = 5 V, V - = - 5 V
VIN = 2.4 V, 0.8 Vf
Temp.b
RDS(on)
V + = 5 V, V - = - 5 V
IS = 10 mA, VD = ± 3.5 V
Room
Full
20
33
45
33
40
RDS(on)
IS = 10 mA, VD = ± 3.5 V
Room
0.1
0.5
0.5
Symbol
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
5
-5
Unit
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
On-Resistance Match
Between Channelse
IS(off)
Switch Off
Leakage Currentg
ID(off)
Channel On
Full
V + = 5.5 , V - = - 5.5 V
VD = ± 4.5 V, VS = ± 4.5 V
-5
5
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
-1
- 15
1
15
-1
- 10
1
10
ID(on)
V + = 5.5 V, V - = - 5.5 V
VS = VD = ± 4.5 V
Room
Full
IIL
VIN Under Test = 0.8 V
Full
0.05
- 1.5
1.5
-1
1
IIH
VIN Under Test = 2.4 V
Full
0.05
- 1.5
1.5
-1
1
Turn-On Time
tON
Room
Full
21
60
83
60
70
Turn-Off Time
tOFF
RL = 300 , CL = 35 pF
VS = ± 3.5 V, see figure 2
Room
Full
16
35
55
35
45
Room
5
Room
68
Room
85
Room
9
Leakage Currentg
V
nA
Digital Control
Input Current, VIN Lowe
Input Current, VIN High
e
µA
Dynamic Characteristics
Charge Injectione
Off Isolation
Q
e
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
Drain Off Capacitance
Vg = 0 V, Rg = 0 , CL = 10 nF
CS(off)
e
Channel On Capacitance
RL = 50 , CL = 5 pF , f = 1 MHz
CD(off)
e
f = 1 MHz
CD(on)
Room
9
Room
20
ns
pC
dB
pF
Power Supplies
Positive Supply Currente
Negative Supply Currente
Ground Currente
Document Number: 71399
S11-1066–Rev. E, 30-May-11
I+
Full
0.002
-
Room
Full
- 0.002
-1
- 7.5
-1
-5
Full
- 0.002
- 1.5
-1
IGND
VIN = 0 V or 5 V
1.5
1
µA
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DG441L, DG442L
Vishay Siliconix
SPECIFICATIONSa (Single Supply 5 V)
Test Conditions
Unless Otherwise Specified
V + = 5 V, V - = 0 V
VIN = 2.4 V, 0.8 Vf
Temp.b
5
5
RDS(on)
V + = 4.5 V
IS = 5 mA, VD = 1 V, 3.5 V
Room
Full
35
50
88
50
75
RDS(on)
IS = 10 mA, VD = 3.5 V
Room
0.5
1
1
Turn-On Timee
tON
Room
Hot
27
50
90
50
60
Turn-Off Timee
tOFF
RL = 300 , CL = 35 pF
VS = 3.5 V, see figure 2
Room
Hot
15
30
55
30
40
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
0.5
I+
Full
10
I-
VIN = 0 V or 5 V
Room
Full
- 0.002
-1
- 7.5
-1
-5
Full
- 10
- 200
- 100
Parameter
Symbol
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Unit
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistancee
On-Resistance Match
Between Channelse
Full
V
Dynamic Characteristics
Charge Injectione
Q
ns
pC
Power Supplies
Positive Supply Currente
e
Negative Supply Current
Ground Currente
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4
IGND
200
100
µA
Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
SPECIFICATIONSa (Single Supply 3 V)
Parameter
Test Conditions
Unless Otherwise Specified
V + = 3 V, V - = 0 V
VIN = 0.4 Vf
Temp.b
RDS(on)
V + = 2.7 V, V - = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
Room
Full
65
80
115
80
100
RDS(on)
IS = 5 mA, VD = 2.2 V
Room
1
3
3
Symbol
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
3
0
Unit
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
On-Resistance Match
Between Channelse
IS(off)
Switch Off
Leakage Currentg
ID(off)
Channel On
Full
V + = 3.3 , V - = 0 V
VD = 1, 2 V, VS = 2, 1 V
0
3
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
-1
- 15
1
15
-1
- 10
1
10
ID(on)
V + = 3.3 V, V - = 0 V
VS = VD = 1, 2 V
Room
Full
IIL
VIN under test = 0.4 V
Full
0.005
- 1.5
1.5
-1
1
IIH
VIN under test = 2.4 V
Full
0.005
- 1.5
1.5
-1
1
Turn-On Time
tON
Room
Full
50
136
175
136
151
Turn-Off Time
tOFF
RL = 300 , CL = 35 pF
VS = 1.5 V, see figure 2
Room
Full
30
100
140
100
125
Room
1
Room
68
Room
85
Room
6
Leakage Currentg
V
nA
Digital Control
Input Current, VIN Lowe
Input Current, VIN High
e
µA
Dynamic Characteristics
Charge Injectione
Off Isolation
Q
e
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
Drain Off Capacitance
Vg = 0 V, Rg = 0 , CL = 10 nF
CS(off)
e
Channel On Capacitance
RL = 50 , CL = 5 pF , f = 1 MHz
CD(off)
e
CD(on)
f = 1 MHz
Room
6
Room
20
ns
pC
dB
pF
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71399
S11-1066–Rev. E, 30-May-11
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DG441L, DG442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
100
R DS(on) – On-Resistance ()
RDS(on) – On-Resistance ()
V+ = 5 V
V- = 0 V
80
VCC = 2.7 V
60
40
VCC = 4.5 V
VCC = 12 V
20
40
A
30
C
B
D
20
A =125 °C
B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
10
0
0
0
3
6
9
12
0
1
3
4
5
Drain Voltage (V)
RDS(on) vs. Drain Voltage
(Single Supply)
RDS(on) vs. Drain Voltage and Temperature
(Single Supply)
30
V+ = 5 V
V- = - 5 V
V±=±5V
28
A
B
21
C
D
E
14
A = 125 °C
B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
7
I S , I D Leakage Current (pA)
20
RDS(on) – On-Resistance ()
2
Drain Voltage (V)
35
-5
-3
10
ID(on)
0
ID(off)
IS(off)
- 10
- 20
- 30
0
-1
1
3
-5
5
-3
-1
1
3
5
VD or V S – Drain-Source Voltage
Drain Voltage (V)
RDS(on) vs. Drain Voltage and Temperature
(Dual Supply)
Leakage Current vs. Analog Voltage
(Dual Supply)
45
50
36
Switching Speed (nS)
40
Switching Speed (nS)
E
tON
30
20
tOFF
tON
tOFF
27
18
9
10
0
0
0
3
6
9
12
V ± Positive Supply Voltage (V)
Switching Time vs. Single Supply
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6
15
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V ± Positive Supply voltage (V)
Switching Time vs. Dual Supply
Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
Charge Injection (Q)
4
VSUPPLY = ± 5 V
2
VSUPPLY = 3 V
0
-2
-5
-3
-1
1
3
5
Drain Voltage (V)
1.8
7
1.5
6
Capacitance (pF)
V TH – Threshold (V)
Charge Injection vs. Drain Voltage
1.2
0.9
0.6
CD(off) at VCC = 5 V
CD(off) at VCC = 12 V
5
CD(off) at VCC = 3 V
4
3
2
0.3
1
0.0
0
0
2
4
6
8
10
12
0
14
3
Input Threshold vs. Single Supply Voltage
9
12
Drain Capacitance vs. Drain Voltage
(Single Supply)
25
10
VSUPPLY = ± 5 V
CD(on)
- 10
20
- 30
Loss (dB)
Capacitance (pF)
6
VD – Drain Voltage (V)
V ± Positive Supply Voltage (V)
15
- 50
V+ = 3 V
V- = 0 V
RL = 50
Insertion Loss
- 3 dB = 280 MHz
Off Isolation
10
- 70
Crosstalk
CS/CD(off)
5
- 90
0
-5
-3
-1
1
3
Analog Voltage (V)
Capacitance vs. Analog Signal
(Dual Supply)
Document Number: 71399
S11-1066–Rev. E, 30-May-11
5
- 110
0.1
1
10
100
1000
Frequency (MHz)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (Single Supply)
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DG441L, DG442L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
S
V-
Level
Shift/
Drive
INX
V+
GND
D
V-
Figure 1.
TEST CIRCUITS
V+
Logic
Input
V+
S
VS
IN
VO
RL
1 k
GND
tr < 20 ns
tf < 20 ns
50 % 50 %
0V
D
3V
3V
CL
35 pF
tOFF
Switch
Input
VS
Switch
Output
0V
VO
80 %
80 %
V-
VCL (includes fixture and stray capacitance)
Note:
tON
Logic input waveform is inverted for DG442.
Figure 2. Switching Time
V+
V
O
Rg
VO
V+
S
D
IN
OFF
ON
OFF
(DG441)
CL
1 nF
3V
GND
INX
VO
VINX
OFF
ON
Q = VO x CL
OFF
(DG442)
V-
Figure 3. Charge Injection
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Document Number: 71399
S11-1066–Rev. E, 30-May-11
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DG441L, DG442L
Vishay Siliconix
TEST CIRCUITS
C = 1 µF tantalum in parallel with 0.01 µF ceramic
V+
C
V+
S1
VS
Rg = 50
D1
50
IN1
0 V, 2.4 V
VO
D2
S2
NC
RL
IN2
0 V, 2.4 V
GND
V-
C
VVS
XTA LK Isolation = 20 log
C = RF bypass
VO
Figure 4. Crosstalk
V+
C
V+
S
VS
VO
D
Rg = 50
0 V, 2.4 V
RL
IN
GND
V-
C
VOff Isolation = 20 log
VS
VO
Figure 5. Off Isolation
V+
C
S
V+
Meter
IN
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
V-
C
V-
Figure 6. Source/Drain Capacitances
Document Number: 71399
S11-1066–Rev. E, 30-May-11
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DG441L, DG442L
Vishay Siliconix
APPLICATIONS
+ 24 V
+ 12 V
RL
DG442L
V+
I = 3A
150
+ 12 V
VN0300L, M
+ 12 V
IN
VIN
10 k
1/4 DG442L
S
+
+ 12 V
D
VOUT
-
CH
+
-
GND
VIN
0V
0 = Load Off
1 = Load On
Figure 8. Open Loop Sample-and-Hold
Figure 7. Power MOSFET Driver
VIN
H = Sample
L = Hold
+
-
VOUT
+ 12 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit accuracy of circuit.
V+
GAIN1
AV = 1
R1
90 k
GAIN2
A V = 10
R2
5 k
With SW4 Closed
VOUT
VIN
GAIN3
A V = 20
R3
4 k
GAIN4
A V = 100
R4
1 k
=
R1 + R2 + R3 + R4
= 100
R4
DG441L or DG442L
V-
GND
V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?71399.
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Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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1
PAD Pattern
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Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
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to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
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