DG451, DG452, DG453
Vishay Siliconix
High Voltage 4-Ω Quad SPST CMOS Analog Switch
DESCRIPTION
FEATURES
The DG451 series has four independently selectable high
voltage (44 V) SPST switches, each with a typical on
resistance of 4 Ω and a typical flatness of 0.2 Ω, ideal
parameters for low distortion audio signal switching.
The DG451 (NC) and DG452 (NO) are identical except for
the digital logic control input, which is inverted as shown in
the Truth Table. The DG453 has two normally closed and
two normally open switches.
These are high voltage switches that are fully specified with
dual supplies at ± 5 V and ± 15 V and a single supply of
12 V and operating with ultra low power dissipation (18 µW).
Fast switching speeds coupled with high signal bandwidth
makes these parts suitable for video switching applications.
All digital inputs have 0.8 V and 2.4 V logic thresholds
ensuring low voltage TTL/CMOS compatibility. Each switch
conducts equally well in both directions when on and can
handle an input signal range that extends to the supply
voltage rails.
The DG451, DG452, and DG453 are pin compatible with the
DG411, DG412, and DG413.
•
•
•
•
•
•
•
•
Low on-resistance (4 Ω typical)
On-resistance flatness (0.2 Ω typical)
100 mA continuous current
RoHS
COMPLIANT
44 V supply maximum rating
± 15 V analog signal range
Fully specified at supply voltages of ± 5 V, 12 V and ± 15 V
Ultra low power dissipation of (18 µW)
Fast switching speed:
- ton 80 ns
- toff 60 ns
• TTL/CMOS compatible
• ESD protection 2 kV
• Pin compatible with DG411, DG412, and DG413
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
•
Audio and video signal switching
Precision automatic test equipment
Precision data acquisition
Relay replacement
Communications systems
Automotive and avionics applications
Sample and hold systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG451
DG453
TSSOP16 and SOIC16
TSSOP16 and SOIC16
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Top View
Top View
TRUTH TABLE
TRUTH TABLE
Logic
DG451
DG452
Logic
SW1, SW4
SW2, SW3
0
On
Off
0
Off
On
1
Off
On
1
On
Off
Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
www.vishay.com
1
DG451, DG452, DG453
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
16 Pin TSSOP
DG451EQ-T1-E3
DG452EQ-T1-E3
DG453EQ-T1-E3
16 Pin Narrow SOIC
DG451EY-T1-E3
DG452EY-T1-E3
DG453EY-T1-E3
DG451, DG452, DG453
- 40 °C to 125 °Ca
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
V+ to V-
Unit
44
GND to V-
25
VL
V
(GND - 0.3) to (V+) + 0.3
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Digital Inputsa, VS, VD
Continuous Current (D, S only)
100
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
300
Storage Temperature
mA
- 65 to 150
TSSOPc
450
16 Pin Narrow SOICd
600
16 Pin
Power Dissipation (Package)b
Thermal Resistance (Package)b
16 Pin TSSOP
178
16 Pin Narrow SOIC
125
ESD (HBM)
°C
mW
C/W
2
kV
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 5.6 mW/°C above 70 °C.
d. Derate 8.0 mW/°C above 75 °C.
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Va
Temp.b
VANALOG
Full
RON
IS = - 10 mA, VD = - 10 V to + 10 V
Room
Full
3.8
5.3
8.3
ΔRON
IS = - 10 mA, VD = ± 10 V
Room
Full
0.12
0.5
1
0.5
0.5
Room
Full
0.25
0.5
0.5
0.5
0.5
Room
Full
± 0.1
- 0.5
- 20
0.5
20
- 0.5
- 2.5
0.5
2.5
Room
Full
± 0.1
- 0.5
- 20
0.5
20
- 0.5
- 2.5
0.5
2.5
Room
Full
± 0.1
- 0.4
- 40
0.4
40
-1
-5
1
5
Symbol
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
15
- 15
Max.d
Unit
15
V
5.3
7.3
Ω
Analog Switch
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
Channel On
Leakage Current
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2
RFLATNESS IS = - 10 mA, VD = - 5 V, 0 V, + 5 V
IS(off)
±
Analog Signal Rangee
VD = ± 10 V, VS = 10 V
ID(off)
ID(on)
VS = VD = ± 10 V
- 15
nA
Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
DG451, DG452, DG453
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Va
Temp.b
Typ.c
Min.d
Max.d
Min.d
Max.d
- 40 °C to 125 °C - 40 °C to 85 °C
Unit
Digital Control
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
Input Current, VIN High
IIH
VIN Under Test = 2.4 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
Input Capacitancee
CIN
f = 1 MHz
Room
7
Turn-On Time
tON
Room
Full
88
118
160
118
144
Turn-Off Time
tOFF
RL = 300 Ω, CL = 35 pF
VS = ± 10 V, See Figure 2
Room
Full
69
97
120
97
112
µA
pF
Dynamic Characteristics
Break-Before-Make
Time Delay
tD
DG453 only, VS = 10 V
RL = 300 Ω, CL = 35 pF
Room
18
Charge Injectione
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
22
Room
- 60
Room
- 85
Off Isolation
e
OIRR
Channel-to-Channel
Crosstalke
XTALK
Source Off Capacitancee
Drain Off Capacitance
e
Channel On
Capacitancee
Total Harmonic
Distortione
RL = 50 Ω, CL = 5 pF
f = 1 MHz
CS(off)
Room
31
CD(off)
Room
34
Room
103
Room
0.04
Room
Full
0.001
Room
Full
- 0.001
Room
Full
0.001
Room
Full
- 0.001
f = 1 MHz
CD(on)
THD
Signal = 5 VRMS, 20 Hz to 20 kHz,
RL = 600 Ω
ns
pC
dB
pF
%
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
Ground Current
V+ = 16.5 V, V- = - 16.5 V
VL = 5 V, VIN = 0 or 5 V
IGND
0.5
5
- 0.5
-5
0.5
5
- 0.5
-5
0.5
5
- 0.5
-5
0.5
5
µA
- 0.5
-5
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
Unless Specified
V+ = 5 V, V- = - 5 V
Parameter
Symbol
VL = 5 V, VIN = 2.4 V, 0.8 Va
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.b
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
-5
5
-5
5
V
Analog Switch
Analog Signal Rangee
VANALOG
Full
RON
V+ = + 5 V, V- = - 5 V
IS = - 10 mA, VD = - 3.5 V to + 3.5 V
Room
Full
3.8
11
15
11
12
ΔRON
V+ = + 5 V, V- = - 5 V,
IS = - 10 mA, VD = ± 3.5 V
Room
Full
0.13
0.5
1
0.5
0.5
Turn-On Timee
tON
Room
Full
170
200
296
200
256
Turn-Off Timee
tOFF
RL = 300 Ω, CL = 35 pF
VS = 3 V, See Figure 2
Room
Full
66
96
124
96
113
tD
DG451 only, VS = 3 V
RL = 300 Ω, CL = 35 pF
Room
Full
98
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Full
8
On-Resistance
On-Resistance Match
Ω
Dynamic Characteristics
Break-Before-Makee
Time Delay
Charge Injectione
Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
ns
pC
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DG451, DG452, DG453
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
Unless Specified
V+ = 5 V, V- = - 5 V
Parameter
VL = 5 V, VIN = 2.4 V, 0.8 Va
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.b
Typ.c
Room
Full
0.001
Room
Full
- 0.001
IL
Room
Full
0.001
IGND
Room
Full
- 0.001
Symbol
Min.d
Max.d
Min.d
Max.d
Unit
Power Supplies
Power Supply Current
I+
Negative Supply Current
IVL = 5 V, VIN = 0 or 5 V
Logic Supply Current
Ground Current
- 0.5
-5
- 0.5
-5
- 0.5
-5
- 0.5
-5
- 0.5
-5
- 0.5
-5
µA
- 0.5
-5
- 0.5
-5
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Parameter
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Va
Temp.b
VANALOG
Full
RON
IS = - 10 mA, VD = 0 V to + 10 V
Room
Full
5.5
ΔRON
IS = - 10 mA, VD = + 10 V
Room
Full
0.14
0.5
1
0.5
0.5
RFLATNESS
IS = - 10 mA,
VD = 0 V, + 5 V, + 10 V
Room
Full
0.94
1.5
1.7
1.5
1.5
Room
Full
132
162
238
162
210
Room
Full
61
91
117
91
105
Symbol
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
12
12
V
8.1
12.4
8.1
10.4
Analog Switch
Analog Signal Rangee
On-Resistance
On-Resistance Match
On-Resistance Flatness
Ω
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
e
Charge Injection
RL = 300 Ω, CL = 35 pF
VS = 8 V, See Figure 2
tD
DG453 only, VS = 8 V
RL = 300 Ω, CL = 35 pF
Room
70
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
1
ns
pC
Power Supplies
Power Supply Current
I+
Room
Full
0.001
Negative Supply Current
I-
Room
Full
- 0.001
Logic Supply Current
IL
Room
Full
0.001
IGND
Room
Full
- 0.001
VL = 5 V, VIN = 0 or 5 V
Ground Current
0.5
5
- 0.5
-5
0.5
5
- 0.5
-5
0.5
5
- 0.5
-5
0.5
5
µA
- 0.5
-5
Notes:
a. VIN = input voltage to perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
DG451, DG452, DG453
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, VL = 5 V, unless otherwise noted
8
20
RON - On-Resistance (Ω)
± 5.0 V
RON - On-Resistance (Ω)
TA = + 25 °C
IS = 10 mA
TA = + 25 °C
IS = 10 mA
7
6
± 10 V
5
± 12 V
± 13.5 V
± 15 V
±8V
4
± 20 V
3
15
V+ = 5 V
V+ = 8 V
10
V+ = 10.8 V
V+ = 12 V
V+ = 15 V
5
V+ = 20 V
V+ = 36 V
2
1
- 20
0
- 15
- 10
-5
0
5
10
15
0
20
4
8
20
24
28
32
36
12
10
V+ = + 15 V
V- = - 15 V
IS = 10 mA
9
V+ = + 12 V
V- = 0 V
IS = 10 mA
11
10
RON - On-Resistance (Ω)
8
RON - On-Resistance (Ω)
16
On-Resistance vs. VD and Single Supply Voltage
On-Resistance vs. VD and Dual Supply Voltage
7
6
+ 125 °C
5
+ 85 °C
4
+ 25 °C
3
- 40 °C
9
+ 125 °C
8
+ 85 °C
7
6
+ 25 °C
5
2
4
1
3
0
- 15
12
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
- 40 °C
2
- 10
-5
0
5
10
0
15
2
VCOM - Analog Voltage (V)
4
6
8
10
12
VD - Analog Voltage (V)
On-Resistance vs. VD and Temperature
On-Resistance vs. VD and Temperature
100 000
10 000
ID (off)
Leakage Current (pA)
Leakage Current (pA)
10 000
1000
100
ID (on)
IS (off)
ID (off)
1000
100
ID (on)
IS (off)
10
10
V+ = + 13.2 V
V- = 0 V
V+ = + 15 V
V- = - 15 V
1
- 60 - 40 - 20
0
20
40
60
80
100 120
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
140
1
- 60 - 40 - 20
0
20
40
60
80
100 120 140
Temperature (°C)
Leakage Current vs. Temperature
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DG451, DG452, DG453
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, VL = 5 V, unless otherwise noted
140
275
CL =1 nF
Drain
120
225
80
tON V = ± 5 V
200
V+ = + 5 V
V- = - 5 V
60
tON/tOFF (ns)
Q - Charge Injection (pC)
250
V+ = + 15 V
V- = - 15 V
100
40
20
0
175
150
125
tON V = ± 15 V
100
- 20
75
V+ = + 12 V
V- = - 0 V
- 40
- 60
- 20
- 15
- 10
-5
0
5
10
tOFF V = ± 5 V
tOFF V = ± 15 V
50
15
25
- 55
20
- 35
- 15
5
25
45
65
85
105
125
Temperature (°C)
Analog Voltage (V)
Switching Time vs. Temperature and
Dual Supply Voltage
Charge Injection vs. Analog Voltage
350
200
180
T = 25 °C
300
160
250
tON/tOFF (ns)
tON/tOFF (ns)
140
120
100
tON
tOFF
80
200
tON V = + 12 V
150
100
tOFF V = + 12 V
60
50
40
0
- 55
20
4
6
8
10
12
14
16
18
20
- 35
- 15
25
45
65
85
105
125
Temperature (°C)
Dual Supply Voltage (V)
Switching Time vs. Temperature and
Single Supply Voltage
Switching Time vs. Dual Supply Voltage
350
3.0
300
2.5
V T - Switching Threshold (V)
T = 25 °C
250
tON/tOFF (ns)
5
200
150
tON
100
tOFF
with VL = 5 V
2.0
1.5
1.0
0.5
50
0
0.0
5
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10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
Single Supply Voltage (V)
Supply Voltage (V)
Switching Time vs. Single Supply Voltage
Switching Threshold vs. Supply Voltage
40
Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
DG451, DG452, DG453
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, VL = 5 V, unless otherwise noted
100 m
10
DG45, DG452, DG453
V+ = + 15 V
V- = - 15 V
10 m
0
IGND
I+
100 µ
Loss, OIRR, X Talk (dB)
Supply Current (A)
1m
10 µ
IL
I-
1µ
Loss
- 10
100 n
- 20
- 30
- 40
OIRR
- 50
- 60
XTalk
- 70
- 80
V+ = + 15 V
V- = - 15 V
R L = 50 Ω
- 90
10 n
- 100
1n
10
100
1K
10K
100K
1M
- 110
100K
10M
1M
10M
100M
1G
Frequency (Hz)
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
TEST CIRCUITS
+5V
+ 15 V
Logic
Input
tr < 5 ns
tf < 5 ns
3V
50 %
0V
V+
VL
± 10 V
S
tOFF
D
Switch
Input*
VO
VS
VO
RL
300 Ω
V-
GND
CL
35 pF
90 %
90 %
IN
0V
tON
- 15 V
Note:
CL (includes fixture and stray capacitance)
Logic input waveform is inverted for switches that
have the opposite logic sense control
RL
VO = V S
RL + R DS(on)
Figure 1. Switching Time
+5V
+ 15 V
Logic
Input
V+
VL
VS1
S1
D1
VS2
Switch
Output
IN2
RL1
300 Ω
V-
GND
90 %
VO2
D2
S2
50 %
0V
VS1
VO1
VO1
IN1
3V
RL2
300 Ω
CL2
35 pF
CL1
35 pF
Switch
Output
0V
VS2
VO2
0V
90 %
tD
tD
- 15 V
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make (DG453)
Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
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DG451, DG452, DG453
Vishay Siliconix
TEST CIRCUITS
ΔVO
Rg
+5V
+ 15 V
VL
V+
S
VO
INX
OFF
D
IN
Vg
ON
OFF
VO
CL
1 nF
3V
V-
GND
OFF
INX
ON
Q = ΔVO x CL
OFF
- 15 V
Figure 3. Charge Injection
+5V
+ 15 V
C
C
VL
V+
D1
S1
VS
Rg = 50 Ω
50 Ω
IN1
0 V, 2.4 V
S2
D2
VO
NC
0 V, 2.4 V
RL
IN2
GND
XTALK Isolation = 20 log
V-
C
VO
- 15 V
VS
C = RF bypass
Figure 4. Crosstalk
+5V
+ 15 V
C
C
VL
V+
S
VS
+5V
C
VO
D
C
VL
Rg = 50 Ω
0 V, 2.4 V
+ 15 V
V+
S
RL
50 Ω
IN
GND
V-
Meter
IN
C
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
- 15 V
GND
Off Isolation = 20 log
V-
VO
C
VS
C = RF Bypass
Figure 5. Off-Isolation
- 15 V
Figure 6. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74470.
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Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
www.vishay.com
1
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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