DG459DJ-E3

DG458, DG459 Vishay Siliconix Fault-Protected Single 8-Ch/Differential 4-Ch Analog Multiplexers DESCRIPTION FEATURES The DG458 and DG459 are 8-channel single-ended and • • • • • • • • 4-channel differential analog multiplexers, respectively, incorporating fault protection. A series n-p-n MOSFET structure provides device and signal-source protection in the event of power loss or overvoltages. Under fault conditions the multiplexer input (or output) appears as an open circuit and only a few nanoamperes of leakage current will flow. Fault and Overvoltage Protection All Channels Off When Power Off Latchup-Proof Fast Switching - tA: 200 ns Break-Before-Make Switching Low On-Resistance: 180 W Low Power Consumption: 3 mW TTL and CMOS Compatible Inputs This protects not only the multiplexer and the circuitry following it, but also protects the sensors or signal sources BENEFITS which drive the multiplexer. • • • • • • The DG458 and DG459 can withstand continuous overvoltage inputs up to ± 35 V. All digital inputs have TTL compatible logic thresholds. Break-before-make operation prevents channel-to-channel interference. The DG458 and DG459 are improved pin-compatible replacements for HI-508A/509A and MAX358/359 multiplexers. Improved Ruggedness Power Loss Protection Prevents Adjacent Channel Crosstalk Standard Logic Interface Superior Accuracy Fast Settling Time APPLICATIONS • • • • • Data Acquisition Systems Industrial Process Control Systems Avionics Test Equipment High-Rel Control Systems Telemetry FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG459 DG458 Dual-In-Line Dual-In-Line A0 EN VS1 S2 S3 S4 D 16 1 2 Decoders/Drivers 15 3 14 4 13 5 12 6 11 7 10 8 9 A1 A0 A2 EN GND V- V+ S1a S5 S2a S6 S3a S7 S4a S8 Da Top View 16 1 2 Decoders/Drivers 15 3 14 4 13 5 12 6 11 7 10 8 9 A1 GND V+ S1b S2b S3b S4b Db Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70064 S11-1029–Rev. H, 23-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix THRU TABLES AND ORDERING INFORMATION TRUTH TABLE - DG458 TRUTH TABLE - DG459 A2 A1 A0 EN On Switch A1 A0 EN On Switch X X X 0 None X X 0 None 0 0 0 1 1 0 0 1 1 0 0 1 1 2 0 1 1 2 0 1 0 1 3 1 0 1 3 0 1 1 1 4 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 Logic "0" = VAL 0.8 V Logic "1" = VAH 2.4 V X = Don’t Care ORDERING INFORMATION Temp Range Package Part Number DG458DJ DG458DJ-E3 - 40 to 85 °C 16-pin Plastic DIP DG459DJ DG459DJ-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit V+ to V- Unit 44 V+ to GND 22 V- to GND VEN, VA Digital Input - 25 (V-) - 4 to (V+) + 4 VS, Analog Input Overvoltage with Power On (V-) - 20 to (V+) + 20 VS, Analog Input Overvoltage with Power Off - 35 to + 35 Continuous Current, S or D 20 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) 40 Storage Temperature a Power Dissipation (Package) (AK Suffix) - 65 to 150 (DJ Suffix) - 65 to 125 16-pin Plastic DIPB 600 16-pin CerDIPC 1000 LCC-20d 1000 V mA °C mW Notes: a. All leads soldered or welded to PC board. b. Derate 6.3 mW/°C above 75 °C. c. Derate 12 mW/°C above 75 °C. d. Derate 10 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70064 S11-1029–Rev. H, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VAL = 0.8 V, VAH = 2.4 Vf A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Full RDS(on) Room Full Room Drain-Source On-Resistance VD = ± 9.5 V, IS = - 400 µA VD = ± 5 V, IS = - 400 µA Typ.c Min.d - 10 0.45 Max.d Min.d 10 - 10 Unit 10 V 1.5 1.8 400 1.2 1.5 400 180 Max.d RDS(on) VD = 0 V, IS = - 400 µA Room 6 Source Off Leakage Current IS(off) VEN = 0 V, VD = ± 10 V VS = ± 10 V Room Full 0.03 - 0.5 - 50 0.5 50 -1 - 20 1 20 Drain Off Leakage Current Room Full Room Full 0.1 ID(off) -1 - 200 -1 - 100 1 200 1 100 -1 - 50 -2 - 25 1 50 2 25 - 50 50 - 20 20 -2 - 200 -2 - 100 2 200 2 100 -5 - 50 -5 - 25 5 50 5 25 h RDS(on) Matching Between Channels Differential Off Drain Leakage Current IDIFF VEN = 0 V VD = ± 10 V VS = ± 10 V DG458 DG459 DG459 Only Room DG458 Drain On Leakage Current ID(on) 0.1 VS = VD = ± 10 V DG459 Room Full Room Full 0.1 0.05 k  % nA Fault Output Leakage Current (with Overvoltage) Input Leakage Current (with Overvoltage) Input Leakage Current (with Power Supplies Off) ID(off) IS(off) VS = ± 33 V, VD = 0 V See Figure 1 VS = ± 25 V, VD = 10 V, See Figure 1 VS = ± 25 V, VSUPS = 0 V VD = A0, A1, A2, EN = 0 V Room 0.02 nA Room 0.005 -5 5 - 10 10 Room 0.001 -2 2 -5 5 µA Digital Control Input Low Threshold VAl Full Input Low Threshold VAL Full 2.4 Full -1 Logic Input Control Document Number: 70064 S11-1029–Rev. H, 23-May-11 IA VA = 2.4 V or 0.8 V 0.8 0.8 2.4 1 -1 1 V µA www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix SPECIFICATIONSa Parameter Dynamic Characteristics Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VAL = 0.8 V, VAH = 2.4 Vf Temp.b Typ.c A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C tA See Figure 3 Room 200 Break-Before-Make Interval tOPEN See Figure 4 Room 45 Enable Turn-On Time tON(EN) Room Full Room Full Room 140 Room 1.5 Room 90 Room 5 Transition Time See Figure 5 Enable Turn-Off Time tOFF(EN) Settling Time ts Off Isolation OIRR Logic Input Capacitance Cin Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Drain On Capacitance CD(on) To 0.1 % To 0.01 % VEN = 0 V, RL = 1 k CL = 15 pF, VS = 3 VRMS f = 100 kHz f = 1 MHz Min.d Max.d Min.d 500 10 500 250 500 250 500 0.5 Room 5 DG458 Room 15 DG459 Room 10 DG458 Room 40 DG459 Room 35 Room Full Room Full 0.05 Unit 10 250 500 250 500 50 Max.d ns µs dB pF Power Supplies Positive Supply Current I+ Negative Supply Current I- VEN = 5 or 0 V, VA = 0 V Power Supply Range for Continuous Operation Room - 0.01 0.1 0.2 0.1 0.2 - 0.1 - 0.2 ± 4.5 - 0.1 - 0.2 ± 18 ± 4.5 ± 18 mA V Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. When the analog signal exceeds the + 13.5 V or - 12 V,RDS(on) starts to rise until only leakage currents flow. RDS(on) MAX - RDS(on) MIN x 100 % h. RDS(on) = RrDS(on) AVE ( ) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70064 S11-1029–Rev. H, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 mA 700 RDS(on) – Drain-Source On-Resistance ( ) V+ = V- = 0 V 100 µA I S – Source Current 10 µA 1 µA 100 nA 10 nA Operating Range 1 nA 100 pA 10 pA 1 pA - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 V+ = 15 V V- = - 15 V 600 500 25 °C 400 85 °C 300 200 100 - 55 °C 0 50 - 10 - 7.5 - 5.0 VS – Source Voltage (V) - 2.5 2.5 0 7.5 5.0 10 VD – Drain Voltage (V) RDS(on) vs. VD and Temperature Input Leakage vs. Input Voltage 1 mA 10 V+ = 15 V V- = - 15 V VS, VD = ± 10 V V+ = 15 V V- = - 15 V 100 µA 10 µA 1 µA I S, I D (nA) I S – Source Current 125 °C 0 °C 100 nA 10 nA Operating Range ID(on) 1 ID(off) IS(off) 1 nA 0.10 100 pA 10 pA 1 pA - 50 - 40 - 30 - 20 - 10 0.01 0 10 20 30 40 50 - 55 - 35 - 15 VS – Source Voltage (V) 25 45 65 85 105 125 Temperature (°C) Leakage Currents vs. Temperature Off-Channel Leakage Currents vs. Input Voltage 2000 1 nA R DS(on) Drain-Source On-Resistance ( ) V+ = 15 V V- = - 15 V 100 pA I D – Drain Current 5 10 pA 1 pA 0.1 pA - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 VS – Source Voltage (V) Output Leakage vs. Off-Channel Overvoltage Document Number: 70064 S11-1029–Rev. H, 23-May-11 50 1600 ± 5V Supplies 1200 ± 10 V 800 ± 15 V 400 ± 20 V 0 - 20 - 15 - 10 -5 0 5 10 15 20 25 VS – Source Voltage (V) RDS(on) vs. Input Voltage www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) - 110 25 V+ = 15 V V- = - 15 V 20 IS(off) 10 - 90 ID(off) 5 (dB) I S, I D – Leakage (pA) 15 V+ = 15 V V- = - 15 V RL = 1 kΩ - 100 0 - 80 Off Isolation -5 ID(on) - 10 Crosstalk - 70 - 15 - 60 - 20 - 50 - 25 - 15 - 12 - 9 -6 -3 1 3 6 9 12 15 10 k Leakage Current vs. VS, VD Off Isolation and XTALK vs. Frequency 0 tTRANS V+ = 15 V V- = - 15 V - 10 Charge Injection (pC) 200 Time (ns) 10 M f – Frequency (Hz) 240 160 tON(EN) 120 VIN = 2 V 80 - 20 - 30 CL = 1 nF - 40 - 50 tOFF(EN) CL = 10 nF - 60 40 ±5 ± 10 ± 15 - 10 ± 20 -5 0 5 10 VS – Source Voltage (V) V+, V- – Positive and Negative Supplies (V) Switching Times (tTRANS, tON, tOFF) vs. ± VSUPPLIES QINJ vs. VS 280 3.0 V+ = 15 V V- = - 15 V 240 2.5 tTRANS 200 2.0 tON(EN) 160 V TH (V) Time (ns) 1M 100 k VD or VS – Drain or Source Voltage (V) 120 tOPEN 1.5 1.0 80 0.5 tOFF(EN) 40 0 0 - 55 - 35 - 15 5 25 45 65 85 105 Temperature (°C) Switching Times vs. Temperature www.vishay.com 6 125 2.5 5 7.5 10 12.5 15 17.5 20 V+, Supply (V) Logic Input Switching Threshold vs. ± VSUPPLIES Document Number: 70064 S11-1029–Rev. H, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ VVREF GND D V+ A0 VV+ Level Shift AX Decode/ Drive S1 VV+ EN Sn V- TEST CIRCUITS + 15 V V+ IS(off) ± VS ID(off) Sn A D A VD V- - 15 V Figure 2. Analog Input Overvoltage + 15 V + 2.4 V V+ EN S1b * A2 A1 Logic Input ±5V DG458 A0 S8b ± 5V VO Switch Output VO V- 50 Ω 1 MΩ 50 % 0V Db GND 3V 35 pF +5V 90 % -5V tA - 15 V * = S1a - S 8a, S2b - S 7b, Da Figure 3. Transition Time Document Number: 70064 S11-1029–Rev. H, 23-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix TEST CIRCUITS + 15 V V+ EN + 2.4 V S1 , S8 Logic Input +5V 3V 0V S2 - S 7 A0 DG458 A1 A2 Db, D GND Switch Output VO V- 50 Ω 50 % VO 1 kΩ - 15 V 0V 35 pF tOPEN Figure 4. Break-Before-Make Time + 15 V V+ S1 Enable Input +5V EN S2 - S 8 VS DG458 A2 GND 50 % 0V A0 A1 3V V- 50 Ω Switch Output D 1 kΩ VO 35 pF VO 90 % 0V tON(EN) tOF - 15 V Figure 5. Enable Delay www.vishay.com 8 Document Number: 70064 S11-1029–Rev. H, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG458, DG459 Vishay Siliconix DETAILED DESCRIPTION The Vishay Siliconix DG458 and DG459 multiplexers are fully fault- and overvoltage-protected for continuous input voltages up to ± 35 V whether or not voltage is applied to the power supply pins (V+, V-). These multiplexers are built on a high-voltage junction-isolated silicon-gate CMOS process. Two n-channel and one p-channel MOSFETs are connected in series to form each channel (Figure 1). Within the normal analog signal range (± 10 V), the RDS(on) variation as a function of analog signal voltage is comparable to that of the classic parallel N-MOS and P-MOS switches. - 35 V Overvoltage n-Channel MOSFET is On Q1 - 35 V S D G Q2 S D G Q3 S + 35 V Overvoltage D n-Channel MOSFET is Off G p-Channel MOSFET is Off (a) Overvoltage with Multiplexer Power Off When the analog signal approaches or exceeds either supply rail, even for an on-channel, one of the three series MOSFETs gets cut-off, providing inherent protection against overvoltages even if the multiplexer power supply voltages are lost. This protection is good up to the breakdown voltage of the respective series MOSFETs. Under fault conditions only sub microamp leakage currents can flow in or out of the multiplexer. This not only provides protection for the multiplexer and succeeding circuitry, but it allows normal, undisturbed operation of all other channels. Additionally, in case of power loss to the multiplexer, the loading caused on the transducers and signal sources is insignificant, therefore redundant multiplexers can be used on critical applications such as telemetry and avionics. - 15 V Q1 - 35 V Overvoltage n-Channel MOSFET is On + 15 V - 15 V Q2 + 15 V - 15 V Q3 + 35 V Overvoltage n-Channel MOSFET is Off p-Channel MOSFET is Off (b) Overvoltage with Multiplexer Power On Figure 5. Overvoltage Protection Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70064. Document Number: 70064 S11-1029–Rev. H, 23-May-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix CERDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E1 E 1 2 3 4 5 6 7 8 D S Q1 A A1 L1 L e1 C B B1 MILLIMETERS Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S ∝ eA INCHES Min Max Min Max 4.06 5.08 0.160 0.200 0.51 1.14 0.020 0.045 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 19.05 19.56 0.750 0.770 7.62 8.26 0.300 0.325 6.60 7.62 0.260 0.300 2.54 BSC ∝ 0.100 BSC 7.62 BSC 0.300 BSC 3.18 3.81 0.125 0.150 3.81 5.08 0.150 0.200 1.27 2.16 0.050 0.085 0.38 1.14 0.015 0.045 0° 15° 0° 15° ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5403 Document Number: 71282 03-Jul-01 www.vishay.com 1 Packaging Information Vishay Siliconix 20ĆLEAD LCC A1 D L1 A Dim 28 e 1 2 E A A1 B D E e L L1 MILLIMETERS Min Max INCHES Min Max 1.37 2.24 0.054 0.088 1.63 2.54 0.064 0.100 0.56 0.71 0.022 0.028 8.69 9.09 0.342 0.358 8.69 9.09 0.442 0.358 1.27 BSC 0.050 BSC 1.14 1.40 0.045 0.055 1.96 2.36 0.077 0.093 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5321 L Document Number: 71290 02-Jul-01 B www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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