HFA04TB60S

HFA04TB60S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • Base common cathode + 2 1 Anode - Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level BENEFITS • • • • • 3 - Anode D2PAK Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HFA04TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR 600 V VF at 4 A at 25 °C 1.8 V IF(AV) 4A trr (typical) 17 ns TJ (maximum) 150 °C Qrr at 125 °C 40 nC dI(rec)M/dt at 125 °C 280 A/µs ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation PD Operating junction and storage temperature range Document Number: 93033 Revision: 22-Oct-08 TEST CONDITIONS VR TC = 100 °C VALUES UNITS 600 V 4 25 A 16 TC = 25 °C 25 TC = 100 °C 10 TJ, TStg For technical questions, contact: diodes-tech@vishay.com - 55 to + 150 W °C www.vishay.com 1 HFA04TB60S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 µA IF = 4.0 A Maximum forward voltage VFM IF = 8.0 A See fig. 1 IF = 4.0 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. UNITS 600 - - - 1.5 1.8 - 1.8 2.2 - 1.4 1.7 - 0.17 3.0 - 44 300 - 4.0 8.0 pF - 8.0 - nH MAX. UNITS V µA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 Peak recovery current Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 17 - trr1 TJ = 25 °C - 28 42 trr2 TJ = 125 °C - 38 57 IRRM1 TJ = 25 °C - 2.9 5.2 IRRM2 TJ = 125 °C - 3.7 6.7 Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 dI(rec)M/dt2 IF = 4.0 A dIF/dt = 200 A/µs VR = 200 V ns A - 40 60 - 70 105 TJ = 25 °C - 280 - TJ = 125 °C - 235 - MIN. TYP. MAX. UNITS - - 300 °C - - 5.0 - - 80 - 2.0 - g - 0.07 - oz. nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device www.vishay.com 2 Case style D2PAK For technical questions, contact: diodes-tech@vishay.com HFA04TB60S Document Number: 93033 Revision: 22-Oct-08 HFA04TB60S HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0 1 2 4 3 5 0 6 100 300 200 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage 500 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93033 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA04TB60S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A 50 200 180 IF = 8 A IF = 4 A 45 160 140 Qrr (nC) trr (ns) 40 35 30 25 IF = 8 A IF = 4 A 100 80 60 40 VR = 200 V TJ = 125 °C TJ = 25 °C 20 20 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 14 1000 IF = 8 A IF = 4 A 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 10 Irr (A) 120 VR = 200 V TJ = 125 °C TJ = 25 °C 8 6 4 0 100 www.vishay.com 4 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C 2 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions, contact: diodes-tech@vishay.com Document Number: 93033 Revision: 22-Oct-08 HFA04TB60S HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93033 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 HFA04TB60S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A ORDERING INFORMATION TABLE Device code HF A 04 TB 60 S - 1 2 3 4 5 6 7 1 - HEXFRED® family 2 - Process designator: A = Subs. electron irradiated B = Subs. platinum 3 - Current rating (04 = 4 A) 4 - Package outline (TB = TO-220, 2 leads) 5 - Voltage rating (60 = 600 V) 6 - Configuration (S = SMD) 7 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95046 Part marking information http://www.vishay.com/doc?95054 Packaging information http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93033 Revision: 22-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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