HFA08TB120STRR

HFA08TB120S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level BENEFITS • • • • • 3 Anode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count D2PAK DESCRIPTION HFA08TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the HFA08TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR 1200 V VF at 8 A at 25 °C 3.3 V IF(AV) 8A trr (typical) 28 ns TJ (maximum) 150 °C Qrr (typical) 140 nC dI(rec)M/dt (typical) at 125 °C 85 A/µs IRRM (typical) 4.5 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Maximum continuous forward current IF TC = 100 °C VALUES UNITS 1200 V 8 Single pulse forward current IFSM 130 Maximum repetitive forward current IFRM 32 Maximum power dissipation PD Operating junction and storage temperature range TC = 25 °C 73.5 TC = 100 °C 29 TJ, TStg - 55 to + 150 A W °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 93043 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 HFA08TB120S Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Maximum forward voltage VFM TEST CONDITIONS IR = 100 µA MIN. TYP. MAX. 1200 - - IF = 8.0 A - 2.6 3.3 IF = 16 A - 3.4 4.3 IF = 8.0 A, TJ = 125 °C - 2.4 3.1 VR = VR rated - 0.31 10 TJ = 125 °C, VR = 0.8 x VR rated - 135 1000 UNITS V Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V - 11 20 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH UNITS µA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb SYMBOL TEST CONDITIONS trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V MIN. TYP. MAX. - 28 - trr1 TJ = 25 °C - 63 95 trr2 TJ = 125 °C - 106 160 IRRM1 TJ = 25 °C - 4.5 8.0 IRRM2 TJ = 125 °C - 6.2 11 Qrr1 TJ = 25 °C - 140 380 Qrr2 TJ = 125 °C - 335 880 dI(rec)M/dt1 TJ = 25 °C - 133 - dI(rec)M/dt2 TJ = 125 °C - 85 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 - - 40 - 2.0 - g - 0.07 - oz. IF = 8.0 A dIF/dt = 200 A/µs VR = 200 V ns A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device Case style D2PAK HFA08TB120S LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95046 Part marking information http://www.vishay.com/doc?95054 Packaging information http://www.vishay.com/doc?95032 www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93043 Revision: 22-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1