IMBD4148-E3-08

IMBD4148 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diodes 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified available 1 • Base P/N-E3 - RoHS-compliant, commercial grade 2 • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART CIRCUIT CONFIGURATION TYPE MARKING REMARKS Single A2 Tape and reel SYMBOL VALUE UNIT VR 75 V VRM 100 V f  50 Hz IF(AV) 150 mA t < 1 s, Tj = 25 °C IFSM 500 mA up to Tamb = 25 °C Ptot 350 mW SYMBOL VALUE UNIT RthJA 450 °C/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C IMBD4148 ORDERING CODE IMBD4148-E3-08 or IMBD4148-E3-18 IMBD4148-HE3-08 or IMBD4148-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Peak reverse voltage Rectified current (average) half wave rectification with resist. (1) Surge forward current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Note (1) Device on fiberglass substrate, see layout on next page Rev. 1.8, 13-Feb-18 Document Number: 85731 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4148 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 10 mA VF 1.0 V VR = 70 V IR 2500 nA VR = 70 V, Tj = 150 °C IR 50 μA VR = 25 V, Tj = 150 °C IR 30 μA VF = VR = 0 CD 4 pF IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100  trr 4 ns Forward voltage Leakage current Diode capacitance Reverse recovery time (see figures) MIN. TYP. MAX. UNIT LAYOUT FOR RthJA TEST Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 10000 T j = 100 ° C 10 25 ° C 1 0.1 0.01 rf - Dynamic Forward Resistance (Ω) I F - Forward Current ( mA ) 1000 T j = 25 ° C f = 1 kHz 1000 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18661 VF - Forward Voltage ( V ) Fig. 1 - Forward Current vs. Forward Voltage 18662 10 1 0.01 0.1 1 10 IF - Forward Current (mA) 100 Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 1.8, 13-Feb-18 Document Number: 85731 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4148 Ptot - Admissible Power Dissipation ( mW ) www.vishay.com Vishay Semiconductors 10000 I R - Leakage Current ( nA ) 500 400 300 200 100 0 0 100 10 VR = 20 V 1 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature ( °C ) 18663 0 18665 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature CD (VR)/CD (0 V) - Relative Capacitance (pF) 1000 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( ° C ) Fig. 5 - Leakage Current vs. Junction Temperature T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0 2 4 6 8 10 VR - Reverse Voltage (V) 18664 Fig. 4 - Relative Capacitance vs. Reverse Voltage 100 Peak Forward Current ( A ) I FRM - Admissible Repetitive I 18666 10 ν= 0 ν = t p /T tp T = 1/f p I FRM t T 0.1 0.2 1 0.1 10 -5 0.5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length ( s ) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.8, 13-Feb-18 Document Number: 85731 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4148 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Rev. 1.8, 13-Feb-18 Document Number: 85731 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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