IRF634L

IRF634 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • • • • • • TO-220AB G G D S S Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details N-Channel MOSFET PRODUCT SUMMARY VDS (V) DESCRIPTION 250 RDS(on) (Ω) VGS = 10 V 41 Qgs (nC) 6.5 Qgd (nC) Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. 0.45 Qg max. (nC) 22 Configuration Dynamic dV/dt rating Repetitive avalanche rated Available Fast switching Available Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRF634PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 250 Gate-source voltage VGS ± 20 Continuous drain current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V 8.1 5.1 A 32 0.59 W/°C EAS 300 mJ current a IAR 8.1 A Repetitive avalanche energy a EAR 7.4 mJ Single pulse avalanche energy b Repetitive avalanche Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque For 10 s 6-32 or M3 screw PD 74 W dV/dt 4.8 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 7.3 mH, Rg = 25 Ω, IAS = 8.1 A (see fig. 12) c. ISD ≤ 8.1 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0340-Rev. C, 12-Apr-2021 Document Number: 91034 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = 250 μA 250 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.37 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance Forward transconductance RDS(on) VDS = 250 V, VGS = 0 V - - 25 VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 250 - - 0.45 Ω 1.6 - - S ID = 5.1 A b VGS = 10 V Ab gfs VDS = 50 V, ID = 5.1 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 μA Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg Internal drain inductance LD Internal source inductance LS VGS = 10 V ID = 5.6 A, VDS = 200 V, see fig. 6 and 13 b - 770 - - 190 - - 52 - - - 41 - - 6.5 - - 22 pF nC - 9.6 - VDD = 125 V, ID = 5.6 A, Rg = 12 Ω, RD = 22 Ω, see fig. 10 b - 21 - - 42 - - 19 - f = 1 MHz, open drain 0.6 - 2.9 - 4.5 - - 7.5 - - - 8.1 S - - 32 TJ = 25 °C, IS = 8.1 A, VGS = 0 V b - - 2.0 V - 220 440 ns - 1.2 2.4 μC Between lead, 6 mm (0.25") from package and center of die contact ns Ω D nH G S Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0340-Rev. C, 12-Apr-2021 Document Number: 91034 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634 www.vishay.com Vishay Siliconix RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain Current (A) Top 101 100 4.5 V 20 µs Pulse Width TC = 25 °C 100 10-1 101 VDS, Drain-to-Source Voltage (V) 91034_01 3.0 2.5 ID = 5.6 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) 91034_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C 20 40 60 80 100 120 140 160 Fig. 4 - Normalized On-Resistance vs. Temperature 1750 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Top 1400 Capacitance (pF) ID, Drain Current (A) 101 4.5 V 100 1050 Ciss 700 Coss 350 20 µs Pulse Width TC = 150 °C 100 0 101 100 VDS, Drain-to-Source Voltage (V) 91034_02 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 150 °C 25 °C 20 µs Pulse Width VDS = 50 V 10-1 4 91034_03 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S21-0340-Rev. C, 12-Apr-2021 VGS, Gate-to-Source Voltage (V) ID, Drain Current (A) 20 101 101 VDS, Drain-to-Source Voltage (V) 91034_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C 100 Crss ID = 5.6 A VDS = 200 V 16 VDS = 125 V 12 VDS = 50 V 8 4 For test circuit see figure 13 0 10 0 91034_06 10 20 30 40 50 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91034 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634 www.vishay.com Vishay Siliconix ISD, Reverse Drain Current (A) VDS 101 VGS RD D.U.T. RG + - VDD 150 °C 10 V 100 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 25 °C Fig. 10a - Switching Time Test Circuit VGS = 0 V 10-1 0.4 0.6 0.8 1.2 1.0 VDS 90 % VSD, Source-to-Drain Voltage (V) 91034_07 Fig. 7 - Typical Source-Drain Diode Forward Voltage 10 % VGS td(on) 103 Operation in this area limited by RDS(on) 5 tr td(off) tf Fig. 10b - Switching Time Waveforms ID, Drain Current (A) 2 102 5 10 µs 2 10 100 µs 5 1 ms 2 1 10 ms 5 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 1 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) 91034_08 Fig. 8 - Maximum Safe Operating Area ID, Drain Current (A) 10 8 6 4 2 0 25 91034_09 50 75 100 125 150 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature S21-0340-Rev. C, 12-Apr-2021 Document Number: 91034 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634 www.vishay.com Vishay Siliconix Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 0.1 PDM 0.1 0.05 t1 0.02 0.01 t2 Single Pulse (Thermal Response) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) 91034_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS L Vary tp to obtain required IAS VDS tp VDD D.U.T RG + - IAS V DD VDS A 10 V tp 0.01 Ω IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 700 ID 3.6 A 5.1 A Bottom 8.1 A Top 600 500 400 300 200 100 0 VDD = 50 V 25 91034_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S21-0340-Rev. C, 12-Apr-2021 Document Number: 91034 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634 www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91034. S21-0340-Rev. C, 12-Apr-2021 Document Number: 91034 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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