IRF9540
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
S
•
•
•
•
•
•
•
•
TO-220AB
G
G
D
S
D
P-Channel MOSFET
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
-100
VGS = -10 V
0.20
Qg max. (nC)
61
Qgs (nC)
14
Qgd (nC)
29
Configuration
Dynamic dV/dt rating
Available
Repetitive avalanche rated
P-channel
Available
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Single
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRF9540PbF
Lead (Pb)-free and halogen-free
IRF9540PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-100
Gate-source voltage
VGS
± 20
VGS at 10 V
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
IDM
Linear derating factor
Single pulse avalanche energy
b
UNIT
V
-19
-13
A
-72
1.0
W/°C
mJ
EAS
640
Repetitive avalanche current a
IAR
-19
A
Repetitive avalanche energy a
EAR
15
mJ
Maximum power dissipation
TC = 25 °C
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
Mounting torque
For 10 s
6-32 or M3 screw
PD
150
W
dV/dt
-5.5
V/ns
TJ, Tstg
-55 to +175
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = -25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 Ω, IAS = -19 A (see fig. 12)
c. ISD ≤ -19 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91078
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
VDS
VGS = 0 V, ID = -250 μA
-100
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = -1 mA
-
-0.087
-
V/°C
VGS(th)
VDS = VGS, ID = -250 μA
-2.0
-
-4.0
V
Gate-source leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = -100 V, VGS = 0 V
-
-
-100
VDS = -80 V, VGS = 0 V, TJ = 150 °C
-
-
-500
μA
-
-
0.20
Ω
gfs
VDS = -50 V, ID = -11 A b
6.2
-
-
S
Input capacitance
Ciss
-
1400
-
Output capacitance
Coss
-
590
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
-
140
-
-
-
61
-
-
14
Drain-source on-state resistance
Forward transconductance
RDS(on)
ID = -11 A b
VGS = -10 V
Dynamic
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
-
-
29
Turn-on delay time
td(on)
-
16
-
tr
VDD = -50 V, ID = -19 A,
Rg = 9.1 Ω, RD = 2.4 Ω, see fig. 10 b
-
73
-
-
34
-
-
57
-
f = 1 MHz, open drain
0.3
-
1.6
-
4.5
-
-
7.5
-
-
-
-19
Rise time
Turn-off delay time
td(off)
Fall time
VGS = -10 V
ID = -19 A, VDS = -80 V,
see fig. 6 and 13 b
tf
Gate input resistance
Rg
Internal drain inductance
LD
Internal source inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
Ω
nH
G
S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulsed diode forward current
a
Body diode voltage
IS
ISM
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
-
-
-72
TJ = 25 °C, IS = -19 A, VGS = 0 V b
-
-
-5.0
TJ = 25 °C, IF = -19 A, dI/dt = 100 A/μs b
V
-
130
260
ns
-
0.35
0.70
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91078
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540
www.vishay.com
Vishay Siliconix
102
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- ID, Drain Current (A)
Top
101
- 4.5 V
20 µs Pulse Width
TC = 25 °C
100
3.0
ID = - 19 A
VGS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0
101
- VDS, Drain-to-Source Voltage (V)
91078_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
91078_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
3000
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
2500
101
- 4.5 V
Capacitance (pF)
- ID, Drain Current (A)
Top
2000
Ciss
1500
1000
Coss
500
20 µs Pulse Width
TC = 175 °C
100
0
101
100
- VDS, Drain-to-Source Voltage (V)
91078_02
Crss
- VDS, Drain-to-Source Voltage (V)
91078_05
Fig. 2 - Typical Output Characteristics, TC = 175 ° C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
175 °C
101
20 µs Pulse Width
VDS = - 50 V
4
91078_03
5
6
7
8
9
Fig. 3 - Typical Transfer Characteristics
ID = - 19 A
VDS = - 80 V
16
VDS = - 50 V
VDS = - 20 V
12
8
4
For test circuit
see figure 13
0
10
- VGS, Gate-to-Source Voltage (V)
S21-0852-Rev. C, 16-Aug-2021
- VGS, Gate-to-Source Voltage (V)
- ID, Drain Current (A)
20
25 °C
101
0
91078_06
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91078
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540
www.vishay.com
Vishay Siliconix
101
175 °C
16
- ID, Drain Current (A)
- ISD, Reverse Drain Current (A)
20
25 °C
100
12
8
4
VGS = 0 V
0.0
1.0
2.0
3.0
0
5.0
4.0
50
25
- VSD, Source-to-Drain Voltage (V)
91078_07
125
150
175
Fig. 6 - Maximum Drain Current vs. Case Temperature
RD
103
VDS
Operation in this area limited
by RDS(on)
5
VGS
2
- ID, Drain Current (A)
100
TC, Case Temperature (°C)
91078_09
Fig. 4 - Typical Source-Drain Diode Forward Voltage
75
102
D.U.T.
RG
5
+VDD
100 µs
2
1 ms
10
5
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 ms
2
1
2
0.1
0.1
91078_08
Fig. 10a - Switching Time Test Circuit
TC = 25 °C
TJ = 175 °C
Single Pulse
5
2
5
2
1
5
10
2
td(on)
5
102
5
2
td(off) tf
tr
VGS
103
10 %
- VDS, Drain-to-Source Voltage (V)
Fig. 5 - Maximum Safe Operating Area
90 %
VDS
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.5
PDM
0.2
0.1
0.1
t1
t2
0.05
0.02
0.01
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91078_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91078
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+ V DD
QG
- 10 V
QGS
IAS
QGD
- 10 V
0.01 Ω
tp
VG
Fig. 12a - Unclamped Inductive Test Circuit
Charge
IAS
Fig. 13a - Basic Gate Charge Waveform
VDS
Current regulator
Same type as D.U.T.
VDD
50 kΩ
tp
12 V
0.2 µF
0.3 µF
VDS
-
D.U.T.
Fig. 12b - Unclamped Inductive Waveforms
+ VDS
VGS
EAS, Single Pulse Energy (mJ)
2000
ID
- 7.8 A
- 13 A
Bottom - 19 A
- 3 mA
Top
1600
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
1200
800
400
0
VDD = - 25 V
25
91078_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91078
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9540
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91078.
S21-0852-Rev. C, 16-Aug-2021
Document Number: 91078
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 01-Jan-2022
1
Document Number: 91000
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