IRFR120PBF

IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION D DPAK (TO-252) Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. IPAK (TO-251) D D G G S D S G Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR120, SiHFR120) Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR120-GE3 IRFR120PbF SiHFR120-E3 DPAK (TO-252) SiHFR120TR-GE3a IRFR120TRPbFa SiHFR120T-E3a DPAK (TO-252) SiHFR120TRR-GE3a IRFR120TRRPbFa SiHFR120TR-E3a DPAK (TO-252) SiHFR120TRL-GE3a IRFR120TRLPbFa SiHFR120TL-E3a IPAK (TO-251) SiHFU120-GE3 IRFU120PbF SiHFU120-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 VGS at 10 V Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor Linear Derating Factor (PCB V 7.7 4.9 A 31 0.33 Mount)e UNIT 0.020 W/°C Single Pulse Avalanche Energyb EAS 210 Repetitive Avalanche Currenta IAR 7.7 A Repetitive Avalanche Energya EAR 4.2 mJ Maximum Power Dissipation TC = 25 °C Maximum Power Dissipation (PCB Mount)e TA = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s PD 42 2.5 dV/dt 5.5 TJ, Tstg - 55 to + 150 260 mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S13-0171-Rev. C, 04-Feb-13 Document Number: 91266 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 3.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 μA 100 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 250 - - 0.27  1.6 - - S - 360 - - 150 - - 34 - - - 16 ID = 4.6 Ab VGS = 10 V VDS = 50 V, ID = 4.6 A μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 4.4 Gate-Drain Charge Qgd - - 7.7 Turn-On Delay Time td(on) - 6.8 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact pF nC - 27 - - 18 - - 17 - - 4.5 - - 7.5 - - - 7.7 - - 31 - - 2.5 V - 130 260 ns - 0.65 1.3 μC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S13-0171-Rev. C, 04-Feb-13 Document Number: 91266 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C S13-0171-Rev. C, 04-Feb-13 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91266 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S13-0171-Rev. C, 04-Feb-13 Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91266 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S13-0171-Rev. C, 04-Feb-13 Document Number: 91266 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S13-0171-Rev. C, 04-Feb-13 Fig. 13b - Gate Charge Test Circuit Document Number: 91266 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91266. S13-0171-Rev. C, 04-Feb-13 Document Number: 91266 7 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 16-Dec-2019 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34 ECN: E19-0649-Rev. Q, 16-Dec-2019 DWG: 5347 Revision: 16-Dec-2019 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-251AA (HIGH VOLTAGE) 4 3 E1 E Thermal PAD 4 b4 θ2 4 A 0.010 0.25 M C A B L2 4 c2 A θ1 B D D1 A C 3 Seating plane 5 C L1 L3 (Datum A) C L B B A A1 3 x b2 View A - A 2xe c 3xb 0.010 0.25 M C A B Plating 5 b1, b3 Base metal Lead tip c1 (c) 5 (b, b2) Section B - B and C - C MILLIMETERS DIM. MIN. MAX. INCHES MIN. MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 - A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265 4.32 - 0.170 - b 0.64 0.89 0.025 0.035 E1 b1 0.65 0.79 0.026 0.031 e b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380 b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090 b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050 2.29 BSC 2.29 BSC c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060 c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA. Document Number: 91362 Revision: 15-Sep-08 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000