0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IRFU420APBF

IRFU420APBF

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-251-3

  • 描述:

    MOSFET N-CH 500V 3.3A I-PAK

  • 数据手册
  • 价格&库存
IRFU420APBF 数据手册
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low gate Charge Qg results in simple drive requirement 500 RDS(on) () VGS = 10 V Qg max. (nC) 3.0 • Improved gate, avalanche and dynamic dV/dt ruggedness 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration • Fully characterized capacitance avalanche voltage and current Single Available • Effective Coss specified D DPAK (TO-252) and • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IPAK (TO-251) APPLICATIONS D D G • Switch mode power supply (SMPS) • Uninterruptible power supply G S G D S • High speed power switching S N-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR420A-GE3 SiHFR420ATR-GE3 Lead (Pb)-free IRFR420APbF IRFR420ATRPbF a DPAK (TO-252) a IPAK (TO-251) SiHFR420ATRL-GE3 SiHFU420A-GE3 IRFR420ATRLPbF IRFU420APbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 VGS at 10 V Continuous Drain Current Pulsed Drain TC = 25 °C TC = 100 °C Current a ID IDM Linear Derating Factor UNIT V 3.3 2.1 A 10 0.67 W/°C mJ Single Pulse Avalanche Energy b EAS 140 Repetitive Avalanche Current a IAR 2.5 A Repetitive Avalanche Energy a EAR 5.0 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s PD 83 W dV/dt 3.4 V/ns TJ, Tstg -55 to +150 300 °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD  2.5 A, dI/dt  270 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. S16-1522-Rev. D, 08-Aug-16 Document Number: 91274 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance μA - - 3.0  gfs VDS = 50 V, ID = 1.5 A 1.4 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 340 - - 53 - - 2.7 - VDS = 1.0 V, f = 1.0 MHz - 490 - VDS = 400 V, f = 1.0 MHz - 15 - - 28 - - - 17 RDS(on) ID = 1.5 A b VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Coss eff. Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time VGS = 0 V tr td(off) VDS = 0 V to 400 VGS = 10 V Vc ID = 2.5 A, VDS = 400 V, see fig. 6 and 13 b VDD = 250 V, ID = 2.5 A, Rg = 21 , RD = 97 , see fig. 10 b tf - - 4.3 - - 8.5 - 8.1 - - 12 - - 16 - - 13 - - - 3.3 - - 10 pF pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the  integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 2.5 A, VGS = 0 V b TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μs b - - 1.6 V - 330 500 ns - 760 1140 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. S16-1522-Rev. D, 08-Aug-16 Document Number: 91274 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 0.1 4.5V 20μs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.01 4.0 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 1 4.5V 20μs PULSE WIDTH TJ = 150 ° C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics S16-1522-Rev. D, 08-Aug-16 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 6.0 7.0 8.0 9.0 Fig. 3 - Typical Transfer Characteristics TOP 0.1 5.0 VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 10 V DS = 50V 20μs PULSE WIDTH ID = 2.5A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91274 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com 10 10 000 ISD , Reverse Drain Current (A) V GS = 0V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance(pF) Vishay Siliconix Ciss 100 Coss 10 TJ = 150 ° C 1 TJ = 25 ° C Crss 1 1 10 100 0.1 0.4 1000 V DS , Drain-to-Source Voltage (V) 1.0 1.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage 100 ID = 2.5A VDS = 400V VDS = 250V VDS = 100V OPERATION IN THIS AREA LIMITED BY RDS(on) 15 I D , Drain Current (A) VGS , Gate-to-Source Voltage (V) 0.8 VSD ,Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 V GS = 0 V 0.6 10 10 10us 100us 1 1ms 5 0 FOR TEST CIRCUIT SEE FIGURE 13 0 4 8 12 16 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-1522-Rev. D, 08-Aug-16 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 10ms 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91274 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix 5.0 RD VDS VGS D.U.T. 4.0 ID , Drain Current (A) Rg 3.0 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 Fig. 10a - Switching Time Test Circuit VDS 1.0 90 % 0.0 25 50 75 100 125 150 ( ° C) TC , Case Temperature 10 % VGS Fig. 9 - Maximum Drain Current vs. Case Temperature td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms 10 Thermal Response (ZthJC) 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.02 0.01 t2 Notes: 1. Duty factor D = t 1/ t 2 2. Peak T J = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS tp 15 V L VDS D.U.T Rg IAS 20 V tp Driver + A - VDD IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit S16-1522-Rev. D, 08-Aug-16 Fig. 12b - Unclamped Inductive Waveforms Document Number: 91274 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix EAS, Single Pulse Avalanche Energy (mJ) 300 ID 1.1 A 1.6 A BOTTOM 2.5 A TOP 250 QG 10 V 200 QGS 150 QGD VG 100 Charge 50 Fig. 13a - Basic Gate Charge Waveform 0 25 50 75 100 125 150 Current regulator Same type as D.U.T. Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current 50 kΩ 12 V 0.2 µF 0.3 µF 700 + V DSav , Avalanche Voltage ( V ) D.U.T. - VDS VGS 650 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit 600 550 0.0 0.5 1.0 1.5 2.0 2.5 IAV , Avalanche Current ( A) Fig. 12d - Maximum Avalanche Energy vs. Drain Current S16-1522-Rev. D, 08-Aug-16 Document Number: 91274 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel          Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91274. S16-1522-Rev. D, 08-Aug-16 Document Number: 91274 7 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for TO-251AA (High Voltage) OPTION 1: 4 E1 3 E Thermal PAD 4 b4 θ2 4 A 0.010 0.25 M C A B L2 4 c2 A θ1 B D D1 A C 3 Seating plane 5 C L1 L3 (Datum A) C L B B A A1 3 x b2 View A - A 2xe c 3xb 0.010 0.25 M C A B Plating 5 b1, b3 Base metal Lead tip 5 c1 (c) (b, b2) Section B - B and C - C MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 MAX. - A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265 4.32 - 0.170 - b 0.64 0.89 0.025 0.035 E1 b1 0.65 0.79 0.026 0.031 e b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380 b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090 b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050 c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060 c1 0.41 0.56 0.016 0.022 1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 2.29 BSC 2.29 BSC ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968 Notes • Dimensioning and tolerancing per ASME Y14.5M-1994 • Dimension are shown in inches and millimeters • Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body • Thermal pad contour optional with dimensions b4, L2, E1 and D1 • Lead dimension uncontrolled in L3 • Dimension b1, b3 and c1 apply to base metal only • Outline conforms to JEDEC® outline TO-251AA Revision: 27-Dec-2021 Document Number: 91362 1 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix OPTION 2: FACILITY CODE = N E A L2 b4 c2 E1 D2 θ1 CL L4 θ1 D D1 Ø 1.00 x 0.10 deep C B B L L3 L1 C b2 A1 b b1, b3 c c e c1 θ2 Third angle projection b, b2 Section “B-B” and “C-C” DIM. MIN. NOM. MAX. DIM. MIN. NOM. A 2.180 2.285 2.390 D2 5.380 - MAX. - A1 0.890 1.015 1.140 E 6.350 6.540 6.730 4.32 - - b 0.640 0.765 0.890 E1 b1 0.640 0.715 0.790 e b2 0.760 0.950 1.140 L 8.890 9.270 9.650 b3 0.760 0.900 1.040 L1 1.910 2.100 2.290 b4 4.950 5.205 5.460 L2 0.890 1.080 1.270 c 0.460 - 0.610 L3 1.140 1.330 1.520 c1 0.410 - 0.560 L4 1.300 1.400 1.500 c2 0.460 - 0.610 1 0° 7.5° 15° D 5.970 6.095 6.220 2 4° - - D1 4.300 - - 2.29 BSC ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968 Notes • Dimensioning and tolerancing per ASME Y14.5M-1994 • All dimension are in millimeters, angles are in degrees • Heat sink side flash is max. 0.8 mm Revision: 27-Dec-2021 Document Number: 91362 2 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
IRFU420APBF 价格&库存

很抱歉,暂时无法提供与“IRFU420APBF”相匹配的价格&库存,您可以联系我们找货

免费人工找货