MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifier
FEATURES
eSMP ® Series
• Very low profile - typical height of 0.65 mm
Available
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage
current
Top View
Bottom View
• ESD capability
• Meets MSL level 1, per
LF maximum peak of 260 °C
MicroSMP (DO-219AD)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Cathode
Anode
DESIGN SUPPORT TOOLS
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
Models
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
Available
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
100 V, 200 V, 400 V, 600 V
IFSM
20 A
VF at IF = 1.0 A
0.925 V
IR
1 μA
TJ max.
175 °C
Package
MicroSMP (DO-219AD)
Circuit configuration
Single
Case: MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
MSE1PB
MSE1PD
MSE1PG
MSE1PJ
SB
SD
SG
SJ
100
200
400
600
UNIT
Max. repetitive peak reverse voltage
VRRM
Max. average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
20
A
TJ, TSTG
-55 to +175
°C
Operating junction and storage temperature range
V
Revision: 03-May-2018
Document Number: 89067
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 0.5 A
TA = 25 °C
IF = 1.0 A
Max. instantaneous forward voltage
VF (1)
IF = 0.5 A
TA = 125 °C
IF = 1.0 A
Max. reverse current
SYMBOL
TA = 25 °C
Rated VR
IR (2)
TA = 125 °C
TYP.
MAX.
0.940
-
1.016
1.1
0.834
-
0.925
0.98
-
1.0
3.7
50
UNIT
V
μA
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
780
-
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
5
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
MSE1PB
MSE1PD
(1)
MSE1PG
MSE1PJ
UNIT
110
RJL (1)
30
RJC (1)
40
°C/W
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. R
JL is measured
at the terminal of cathode band.
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
AEC-Q101-001
Human body model (contact mode)
TEST CONDITIONS
SYMBOL
CLASS
VALUE
C = 100 pF, R = 1.5 k
H3B
> 8 kV
AEC-Q101-002
Machine model (contact mode)
C = 200 pF, R = 0
M4
> 400 V
JESD22-A114
Human body model (contact mode)
C = 100 pF, R = 1.5 k
3B
> 8 kV
JESD22-A115
Machine model (contact mode)
C = 200 pF, R = 0
C
> 400 V
C = 150 pF, R = 330
4
> 8 kV
C = 150 pF, R = 330
4
> 15 kV
Human body model (contact mode)
IEC 61000-4-2 (2)
Human body model (air-discharge mode)
(1)
VC
Notes
(1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV
(2) System ESD standard
ORDERING INFORMATION (Example)
PREFERRED P/N
MSE1PJ-M3/89A
MSE1PJHM3/89A
(1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.006
89A
4500
7" diameter plastic tape and reel
0.006
89A
4500
7" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 03-May-2018
Document Number: 89067
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Reverse Current (μA)
Average Forward Rectified Current (A)
1.2
1.0
0.8
0.6
0.4
TL Measured
at the Cathode Band Terminal
0.2
0
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0.001
95
105
115
125
135
145
155
165
175
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
10
1.2
D = 0.8
D = 0.5
0.8
D = 0.3
Junction Capacitance (pF)
Average Power Loss (W)
1.0
D = 1.0
D = 0.2
0.6
D = 0.1
T
0.4
0.2
D = tp/T
tp
0.8
1.0
1
0
0
0.2
0.4
0.6
1.2
0.1
10
100
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
TJ = 175 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
Average Forward Current (A)
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 25 °C
TJ = -40 °C
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 03-May-2018
Document Number: 89067
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSE1PB, MSE1PD, MSE1PG, MSE1PJ
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP (DO-219AD)
0.059 (1.50)
0.043 (1.10)
Cathode Band
0.055 (1.40)
0.047 (1.20)
0.030 (0.75)
0.022 (0.55)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
0.030 (0.75)
0.022 (0.55)
Mounting Pad Layout
0.079
(2.00)
0.029 (0.73)
0.025 (0.63)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
0.032
(0.80)
0.032
(0.80)
0.020 (0.50)
Revision: 03-May-2018
Document Number: 89067
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
1
Document Number: 91000