S8CJ-M3/I

S8CG, S8CJ, S8CK, S8CM www.vishay.com Vishay General Semiconductor Surface-Mount Glass Passivated Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per LF maximum peak of 260 °C SMC (DO-214AB) Cathode J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 400 V, 600 V, 800 V, 1000 V IFSM 200 A IR 10 μA VF at IF = 8 A (TA = 125 °C) 0.87 V TJ max. 150 °C Package SMC (DO-214AB) Circuit configuration Single MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code S8CG S8CJ S8CK S8CM 8G 8J 8K 8M UNIT Maximum repetitive peak reverse voltage VRRM 400 600 800 1000 V Maximum RMS voltage VRMS 280 420 560 700 V Maximum DC blocking voltage VDC 400 600 800 1000 Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range V IF(AV) (1) 8.0 A IF(AV) (2) 1.6 A IFSM 200 A TJ, TSTG -55 to +150 °C Notes (1) Mounted on aluminum PCB 30 mm x 30 mm with aluminum heatsink (2) Free air, mounted on recommended copper pad area Revision: 26-Feb-2020 Document Number: 87607 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S8CG, S8CJ, S8CK, S8CM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 4.0 A TA = 25 °C IF = 8.0 A Instantaneous forward voltage SYMBOL VF (1) IF = 4.0 A TA = 125 °C IF = 8.0 A TA = 25 °C TYP. MAX. 0.89 - 0.96 0.985 0.78 - 0.87 0.935 IR (2) - 10 - 350 UNIT V Reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 4 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 79 - pF S8CK S8CM UNIT TA = 125 °C μA Notes (1) Pulse test: 300 μs pulse width; 1 % duty cycle (2) Pulse test: pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance S8CG S8CJ RθJA (1) 75 RθJM (2) 9.5 °C/W Notes (1) Free air, mounted on recommended PCB, 2 oz.pad area; thermal resistance R θJA - junction to ambient (2) Mounted on 30 mm x 30 mm Aluminum PCB, thermal resistance R θJM - junction to mount ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE S8CJ-M3/I PREFERRED P/N 0.257 I 3500 13" diameter plastic tape and reel S8CJHM3/I (1) 0.257 I 3500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) 10.0 10.0 T M measured on aluminum PCB 30 mm x 30 mm 8.0 6.0 4.0 T A measured on recommended PCB, free air 2.0 D = 0.8 9.0 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) D = 0.5 D = 0.3 D = 0.2 8.0 7.0 6.0 D = 1.0 D = 0.1 5.0 4.0 3.0 T 2.0 1.0 0 D = tp/T tp 0.0 0 25 50 75 100 125 Mount Temperature (°C) Fig. 1 - Forward Current Derating Curve 150 0 1 2 3 4 5 6 7 8 9 Average Forward Current (A) Fig. 2 - Average Power Loss Characteristics Revision: 26-Feb-2020 Document Number: 87607 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S8CG, S8CJ, S8CK, S8CM www.vishay.com Vishay General Semiconductor 1000 Junction Capacitance (pF) 2nd line Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C TJ = 85 °C 0.1 TJ = -40 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 1 1.2 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10000 TJ = 125 °C TJ = 100 °C 10 1000 TJ = 85 °C 1 1st line 2nd line Instantaneous Reverse Current (µA) TJ = 150 °C TJ = 25 °C 0.1 100 0.01 TJ = -40 °C 0.001 10 0.0001 10 20 30 40 50 60 70 80 90 100 Transient Thermal Impedance (°C/W) Axis Title 1000 100 100 100 Junction to Ambient 10 1 0.1 0.01 0.1 Percent of Rated Peak Reverse Voltage (%) 1 10 100 1000 t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.01) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 26-Feb-2020 Document Number: 87607 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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