SFH620AA, SFH620AGB
Vishay Semiconductors
Optocoupler, AC Input, 5300 VRMS
FEATURES
A
1
4
C
C
2
3
E
• High current transfer ratios
- at 5 mA: 50 to 600 %
- at 1.0 mA: 45 % typical (> 13)
• Low CTR degradation
• Good CTR linearity depending on forward
current
• Isolation test voltage, 5300 VRMS
i179062
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
DESCRIPTION
• Fast switching times
The SFH620AA/SFH620AGB features a high current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of > 8.0 mm are achieved
with option 6. This version complies with IEC 60950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 VRMS or DC.
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity (unconnected
base)
• SMD option, see SFH620A/SFH6206 data sheet
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
REMARKS
SFH620AA
CTR 50 % to 600 %, DIP-4
SFH620AGB
CTR 100 % to 600 %, DIP-4
SFH620AA-X009
CTR 50 % to 600 %, SMD-4 (option 9)
SFH620AGB-X007
CTR 100 % to 600 %, SMD-4 (option 7)
SFH620AGB-X009
CTR 100 % to 600 %, SMD-4 (option 9)
Note
For additional information on the available options refer to option information.
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83676
Rev. 1.5, 10-Dec-08
SFH620AA, SFH620AGB
Optocoupler, AC Input, 5300 VRMS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Vishay Semiconductors
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
IF
IFSM
Pdiss
6.0
± 60
± 2.5
100
V
mA
A
mW
VCE
VEC
IC
IC
Pdiss
70
7
50
100
150
V
V
mA
mA
mW
VISO
5300
VRMS
≥7
≥7
mm
mm
0.4
mm
INPUT
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
OUTPUT
Collector emitter voltage
Emitter collector voltage
tp ≤ 1.0 µs
Collector current
tp ≤ 1.0 ms
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1
Isolation resistance
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Storage temperature
Ambient temperature
Junction temperature
Soldering temperature (2)
max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm
CTI
175
RIO
RIO
Tstg
Tamb
Tj
≥ 1012
≥ 1011
- 55 to + 150
- 55 to +100
100
Ω
Ω
°C
°C
°C
Tsld
260
°C
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Thermal resistance
COUPLER
Collector emitter saturation voltage
Coupling capacitance
Collector emitter leakage current
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
1.65
V
pF
K/W
IF = ± 60 mA
VR = 0 V, f = 1 MHz
VF
CO
Rthja
1.25
50
750
VCE = 5 V, f = 1 MHz
CCE
Rthja
6.8
500
IF = 10 mA, IC = 2.5 mA
VCEsat
CC
ICEO
ICEO
0.25
0.2
10
10
VCE = 10 V
SFH620AA
SFH620AGB
pF
K/W
0.4
100
100
V
pF
nA
nA
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83676
Rev. 1.5, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
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669
SFH620AA, SFH620AGB
Optocoupler, AC Input, 5300 VRMS
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
IC/IF
TEST CONDITION
IF = ± 5 mA, VCE = 5 V
I F = 5 mA
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
SFH620AA
50 to 600
%
SFH620AGB
100 to
600
%
R L = 1.9 Ω
VCC = 5 V
IC
47 Ω
isfh620aa_0
Fig. 1 - Switching Times (Typical Values)
Linear Operation (Saturated)
SWITCHING CHARACTERISTICS
TEST CONDITION
SYMBOL
Turn-on time
PARAMETER
IF = 5 mA, RL = 1.9 kΩ, VCC = 5 V
ton
MIN.
TYP.
2
MAX.
UNIT
µs
Turn-off time
IF = 5 mA, RL = 1.9 kΩ, VCC = 5 V
toff
25
µs
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Climatic classification
(according to IEC 68 part 1)
TYP.
MAX.
UNIT
55/100/21
Comparative tracking index
CTI
175
399
VIOTM
10000
V
VIORM
890
V
PSO
400
mW
ISI
275
mA
TSI
175
7
°C
Creepage distance
standard DIP-4
mm
Clearance distance
standard DIP-4
7
mm
Creepage distance
400 mil DIP-4
8
mm
Clearance distance
400 mil DIP-4
8
mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1
0.4
mm
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83676
Rev. 1.5, 10-Dec-08
SFH620AA, SFH620AGB
Optocoupler, AC Input, 5300 VRMS
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
%
103
IC
IF
20
pF
IF = 10 mA, VCC = 5.0 V
5
C
f = 1.0 MHz
15
3
2
102
10
1
5
5
CCE
101
- 25
0
0
25
50
TA
isfh620a_01
104
mA
5
103
IF = 10 mA
5
IF = 8 mA
IF = 1 mA
0
0
5
102
IF = 4 mA
5
D=
tp
T
0.05
0.1
tp
IF
T
Pulse cycle
D = parameter
0.5
DC
IF = 2 mA
10
V
15
VCE
101
10-5
10-4
10-3
10-2
isfh620a_05
Fig. 3 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
10-1
100 s 101
tp
Fig. 6 - Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
200
Ptot mW
1.2
VF = f (IF)
V
102
V
0.2
IF = 6 mA
isfh620a_02
VF
101
Ve
D=0
0.005
0.01
0.02
IF = 12 mA
10
100
Fig. 5 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
IF
IF = 14 mA
20
10-1
isfh620a_04
Fig. 2 - Current Transfer Ratio (CTR) vs. Temperature
30
Ic mA
10-2
°C 75
25 °C
50 °C
75 °C
150
Transistor
1.1
100
1.0
Diode
50
0.9
10-1
5
isfh620a_03
100
5
101
5 mA
102
IF
Fig. 4 - Diode Forward Voltage (Typ.) vs. Forward Current
Document Number: 83676
Rev. 1.5, 10-Dec-08
0
0
25
isfh620a_06
50
75
TA
°C 100
Fig. 7 - Permissible Power Dissipation vs. Ambient Temperature
For technical questions, contact: optocoupler.answers@vishay.com
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671
SFH620AA, SFH620AGB
Optocoupler, AC Input, 5300 VRMS
Vishay Semiconductors
IF
120
mA
Ptot = f (TA)
90
60
30
0
0
25
50
75
isfh620a_07
TA
°C 100
Fig. 8 - Permissible Diode Forward Current vs.
Ambient Temperature
PACKAGE DIMENSIONS in inches (millimeters)
2
1
Pin one ID
0.255 (6.48)
0.268 (6.81)
ISO method A
3
4
0.179 (4.55)
0.190 (4.83)
0.300 (7.62) typ.
0.031 (0.79) typ.
0.030 (0.76)
0.045 (1.14)
0.050 (1.27) typ.
0.130 (3.30)
0.150 (3.81)
10°
4°
typ.
0.018 (0.46)
i178027
0.230 (5.84)
0.250 (6.35)
0.022 (0.56)
0.020 (0.508)
0.035 (0.89)
0.050 (1.27)
0.110 (2.79)
0.130 (3.30)
3° to 9°
0.008 (0.20)
0.012 (0.30)
0.100 (2.54)
Option 7
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62)
typ.
0.300 (7.62)
ref.
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
min.
0.331 (8.4)
min.
0.406 (10.3)
max.
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672
0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30) typ.
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
min.
15° max.
For technical questions, contact: optocoupler.answers@vishay.com
18494
Document Number: 83676
Rev. 1.5, 10-Dec-08
SFH620AA, SFH620AGB
Optocoupler, AC Input, 5300 VRMS
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83676
Rev. 1.5, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
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673
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Document Number: 91000
Revision: 11-Mar-11
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