SI1012CR-T1-GE3

Si1012CR Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET® Power MOSFET: 1.2 V Rated 100 % Rg Tested Gate-Source ESD Protected: 1000 V Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits SC-75A G 1 3 S D 2 Marking Code: K Top View Ordering Information: Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipationa TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C IDM IS PD Unit V 0.63a, b 0.5a, b 2 ID TJ, Tstg Operating Junction and Storage Temperature Range Limit 20 ±8 A 0.2a, b 0.24a, b 0.15a, b - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Steady State Maximum Junction-to-Ambientb RthJA Typical 440 540 Maximum 530 650 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. Document Number: 67519 S13-0195-Rev. E, 28-Jan-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012CR Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductance Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg tr Rise Time td(off) Turn-Off Delay Time 0.4 1 ± 30 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS =  5 V, VGS = 4.5 V V µA 10 2 A VGS = 4.5 V, ID = 0.6 A 0.330 0.396 VGS = 2.5 V, ID = 0.3 A 0.380 0.456 VGS = 1.8 V, ID = 0.3 A 0.420 0.546 VGS = 1.5 V, ID = 0.05 A 0.720 1.100 VDS = 10 V, ID = 0.5 A 7.5  S 43 VDS = 10 V, VGS = 0 V, f = 1 MHz 14 VDS = 10 V, VGS = 8 V, ID = 0.6 A 1.3 2 0.75 1.2 pF 8 VDS = 10 V, VGS = 4.5 V, ID = 0.6 A 0.15 nC 0.13 f = 1 MHz VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 1  tf Fall Time mV/°C - 1.8 VDS = 0 V, VGS = ± 8 V td(on) Turn-On Delay Time 17 ID = 250 µA VDS = VGS, ID = 250 µA V 2.4  12.2 24.4 11 20 16 24 26 39 11 20 0.8 1.2 V 10 15 ns 2 4 nC ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 2 IS = 0.5 A IF = 0.5 A, dI/dt = 100 A/µs 5 5 A ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67519 S13-0195-Rev. E, 28-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012CR Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0E-04 0.8 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.0E-05 0.6 TJ = 150 °C 1.0E-06 0.4 TJ = 25 °C TJ = 25 °C 1.0E-07 0.2 1.0E-08 1.0E-09 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 12 0 14 4 7 11 14 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 0.5 2 VGS = 5 V thru 2 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 1.5 V 1 0.3 TC = 25 °C 0.2 0.5 0.1 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 0.6 0.9 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.80 1.5 60 Ciss VGS = 1.8 V 45 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.3 VDS - Drain-to-Source Voltage (V) 0.60 VGS = 2.5 V 0.40 30 Coss 15 VGS = 4.5 V Crss 0.20 0 0 0.5 1 1.5 ID - Drain Current (A) 2 0 5 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 67519 S13-0195-Rev. E, 28-Jan-13 For technical questions, contact: pmostechsupport@vishay.com 20 Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012CR Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 1.6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.6 A VDS = 5 V 6 VDS = 10 V 4 VDS = 16 V 2 ID = 0.5 A VGS = 4.5 V 1.4 1.2 1.0 0.8 VGS = 2.5 V 0 0 0.5 1 0.6 - 50 1.5 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 10 0.8 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.5 A TJ = 150 °C 1 TJ = 25 °C 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.2 0 0.1 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 0 Soure-Drain Diode Forward Voltage 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 3 0.75 ID = 250 μA 2.4 Power (W) VGS(th) (V) 0.65 0.55 1.8 1.2 0.45 0.6 0.35 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient For technical questions, contact: pmostechsupport@vishay.com Document Number: 67519 S13-0195-Rev. E, 28-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012CR Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.24 BVDSS Limited 0.18 1 Power (W) ID - Drain Current (A) Limited by R DS(on)* 1 ms 10 ms 0.12 0.1 0.06 100 ms TC = 25 °C Single Pulse 0.01 0.1 1s 10 s, DC 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 Safe Operating Area, Junction-to-Ambient 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 650 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67519. Document Number: 67519 S13-0195-Rev. E, 28-Jan-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd  C15-1445-Rev. F, 23-Nov-15 0.10 DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 NOTE A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 c 0.13 - 0.15 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC e3 L 5 5 1, 2 0.50 BSC 0.15 0.205 L1 0.40 ref. L2 0.15 BSC 0.30 q 0° - 8° q1 4° - 10° Document Number: 71348 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) (1.803) 0.071 (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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