SI1012X-T1-GE3

Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3 S TrenchFET® Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7  Low Threshold: 0.8 V (typ.) Fast Switching Speed: 10 ns Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers D 2 Top View BENEFITS ORDERING INFORMATION Marking Code Part Number Package Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-75A (SOT-416) C Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-89 (SOT-490) A • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 85 °C Pulsed Drain Currenta ID 600 Continuous Source Current (Diode Conduction)b Maximum Power Dissipationb for SC-75 b Maximum Power Dissipation for SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS TA = 25 °C TA = 85 °C TA = 25 °C PD TA = 85 °C V 500 400 IDM Unit 350 1000 275 250 175 150 90 80 275 250 160 140 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012R, Si1012X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 0.45 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 0.9 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 0.5 ±1 µA IDSS VDS = 20 V, VGS = 0 V 0.3 100 nA Zero Gate Voltage Drain Current Gate Threshold Voltage a On-State Drain Current Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltagea a VDS = 20 V, VGS = 0 V, TJ = 85 °C 5 ID(on) VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA 0.41 0.70 RDS(on) VGS = 2.5 V, ID = 500 mA 0.53 0.85 VGS = 1.8 V, ID = 350 mA 0.70 1.25 gfs VDS = 10 V, ID = 400 mA 1 VSD IS = 150 mA, VGS = 0 V 0.8 700 µA mA  S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA 75 pC 225 5 VDD = 10 V, RL = 47  ID  200 mA, VGEN = 4.5 V, Rg = 10  tf 5 25 ns 11 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012R, Si1012X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1200 1.0 TC = - 55 °C VGS = 5 V thru 1.8 V 1000 ID - Drain Current (mA) ID - Drain Current (A) 0.8 0.6 0.4 0.2 25 °C 800 125 °C 600 400 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 4.0 100 3.2 80 2.4 1.6 2.0 2.5 Ciss 60 40 VGS = 1.8 V 0.8 Coss 20 VGS = 2.5 V VGS = 4.5 V 0.0 Crss 0 0 200 400 600 800 1000 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) On-Resistance vs. Drain Current Capacitance 1.60 5 VDS = 10 V ID = 250 mA 1.40 4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 Transfer Characteristics C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 VGS - Gate-to-Source Voltage (V) 3 2 1.20 VGS = 1.8 V ID = 350 mA 1.00 0.80 1 0 0.0 VGS = 4.5 V ID = 600 mA 0.2 0.4 0.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 0.8 0.60 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012R, Si1012X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5 1000 100 TJ = 25 °C TJ = - 55 °C 10 1 0.0 4 RDS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 4 5 6 On-Resistance vs. Gate-to-Source Voltage 0.3 3.0 0.2 2.5 ID = 0.25 mA 2.0 0.1 IGSS - (µA) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) 0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 4.5 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) IGSS vs. Temperature Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 25 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1012R, Si1012X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 833 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71166. Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd  C15-1445-Rev. F, 23-Nov-15 0.10 DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 NOTE A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 c 0.13 - 0.15 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC e3 L 5 5 1, 2 0.50 BSC 0.15 0.205 L1 0.40 ref. L2 0.15 BSC 0.30 q 0° - 8° q1 4° - 10° Document Number: 71348 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) (1.803) 0.071 (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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