SI1033X-T1-GE3

Si1033X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V - 125 15 at VGS = - 1.8 V - 100 20 at VGS = - 1.5 V - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.5 V Rated • High-Side Switching • Low On-Resistance: 8  • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 45 ns (typ.) • 1.5 V Operation • Gate-Source ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC SC-89 BENEFITS S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 • • • • • Marking Code: K Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS Top View Ordering Information: Si1033X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±5 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS TA = 25 °C TA = 85 °C PD V - 155 - 145 - 110 - 105 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID Unit - 650 - 450 - 380 280 250 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71428 S10-2544-Rev. C, 08-Nov-10 www.vishay.com 1 Si1033X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 0.40 Typ.a Max. Unit - 1.20 V Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State ± 0.5 ±1 VDS = 0 V, VGS = ± 4.5 V ±1 ±2 VDS = - 16 V, VGS = 0 V -1 - 500 VDS = - 16 V, VGS = 0 V, TJ = 85 °C VDS = - 5 V, VGS = - 4.5 V RDS(on) Resistancea VDS = 0 V, VGS = ± 2.8 V - 10 8 VGS = - 2.5 V, ID = - 125 mA 12 VGS = - 1.8 V, ID = - 100 mA 15 Diode Forward Voltagea VDS = - 10 V, ID = - 150 mA VSD IS = - 150 mA, VGS = 0 V µA mA VGS = - 4.5 V, ID = - 150 mA gfs nA - 200 VGS = - 1.5 V, ID = - 30 mA Forward Transconductancea µA  20 0.4 S - 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 1500 VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA 55 VDD = - 10 V, RL = 65  ID  - 150 mA, VGEN = - 4.5 V, Rg = 10  tr Rise Time td(off) Turn-Off Delay Time tf Fall Time pC 150 450 30 ns 60 30 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.5 500 2V VGS = 5 V thru 2.5 V TJ = - 55 °C 400 I D - Drain Current (mA) I D - Drain Current (A) 0.4 1.8 V 0.3 0.2 0.1 25 °C 300 125 °C 200 100 0.0 0 www.vishay.com 2 1 2 3 4 5 6 0 0.0 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 Document Number: 71428 S10-2544-Rev. C, 08-Nov-10 Si1033X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 25 120 VGS = 0 V f = 1 MHz 100 20 C - Capacitance (pF) RDS(on) - On-Resistance () VGS = 1.8 V 15 VGS = 2.5 V 10 Ciss 80 60 40 VGS = 4.5 V 5 Coss 20 0 Crss 0 0 200 400 600 ID - Drain Current (mA) 800 1000 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V ID = 150 mA 4 RDS(on) - On-Resistance (Ω) (Normalized) VGS - Gate-to-Source Voltage (V) 20 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.4 VGS = 4.5 V ID = 150 mA 1.2 VGS = 1.8 V ID = 125 mA 1.0 0.8 0.6 - 50 1.6 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 TJ - Junction Temperature (°C) 125 On-Resistance vs. Junction Temperature Gate Charge 50 1000 RDS(on) - On-Resistance () I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = - 55 °C 10 40 ID = 150 mA 30 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Surge-Drain Diode Forward Voltage Document Number: 71428 S10-2544-Rev. C, 08-Nov-10 1.4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) 6 On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1033X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted) 0.3 3.0 2.5 ID = 0.25 mA 0.1 2.0 I GSS - ( µA) V GS(th) Variance (V) 0.2 - 0.0 1.5 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 125 0.0 - 50 VGS = 2.8 V - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature IGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) TJ - Tempserature (°C) 100 125 0 -1 -2 -3 -4 -5 -6 -7 - 50 - 25 0 25 50 75 TJ - Temperature (°C) 100 125 BVGSS vs. Temperature Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 500 °C/W 0.02 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71428. www.vishay.com 4 Document Number: 71428 S10-2544-Rev. C, 08-Nov-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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