SI1046R-T1-GE3

Si1046R Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.420 at VGS = 4.5 V ID (A) 0.606 Qg (Typ.) 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.150 a APPLICATIONS SC75-3L G • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers 1 3 S • TrenchFET® Power MOSFET: 1.8 V Rated • ESD Protected: 2000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D 2 Marking Code: J Top View Ordering Information: Si1046R-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C Maximum Power Dissipationa TA = 70 °C V 0.606b, c ID 0.485b, c IDM 2.5 IS 0.21b, c A 0.25b, c PD W 0.16b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Maximum Junction-to-Ambientb, d Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 74595 S13-0195-Rev. D, 28-Jan-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1046R Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 20.5 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.95 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 30 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductance VDS =  5 V, VGS = 4.5 V - 2.12 0.35 2.5 µA A VGS = 4.5 V, ID = 0.606 A 0.336 0.420 VGS = 2.5 V, ID = 0.505 A 0.395 0.501 VGS = 1.8 V, ID = 0.150 A 0.438 0.660 VDS = 10 V, ID = 0.606 A 2.1  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 66 VDS = 10 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time VDS = 10 V, VGS = 5 V, ID = 0.606 A VDS = 10 V, VGS = 4.5 V, ID = 0.606 A 0.99 1.49 0.92 1.38 0.15 nC 0.30 f = 1 MHz VDD = 10 V, RL = 20.8  ID  0.48 A, VGEN = 4.5 V, Rg = 1  tf Fall Time pF 7 td(on) Turn-On Delay Time 17  212 17 26 19 28.5 76 114 27 41 ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD IS = 0.48 A 0.8 2.5 A 1.2 V nC Body Diode Reverse Recovery Time trr 16 24 Body Diode Reverse Recovery Charge Qrr 4.8 7.2 Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1 A, dI/dt = 100 A/µs 12.3 ns 3.7 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 74595 S13-0195-Rev. D, 28-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1046R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.8 2.5 VGS = 5 V thru 2 V 2.0 I D - Drain Current (A) I D - Drain Current (A) 0.6 1.5 VGS = 1.5 V 1.0 0.4 TJ = 25 °C 0.2 0.5 TJ = 125 °C VGS = 1.0 V 0.0 0.0 0.5 1.0 1.5 2.0 TJ = - 55 °C 0.0 0.0 2.5 1.2 1.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 100 0.8 80 VGS = 1.8 V Ciss C - Capacitance (pF) R DS(on) - D to S On-Resistance (Ω) 0.8 VDS - Drain-to-Source Voltage (V) 1.0 0.6 VGS = 2.5 V 0.4 60 40 Coss VGS = 4.5 V 0.2 0.0 0.0 20 Crss 0 0.6 1.2 1.8 2.4 3.0 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.8 5 R DS(on) - On-Resistance (Normalized) ID = 0.606 A VGS - Gate-to-Source Voltage (V) 0.4 4 VDS = 10 V 3 VDS = 16 V 2 1 0 0.00 0.25 0.50 0.75 1.00 1.6 VGS = 4.5 V, ID = 0.606 A VGS = 2.5 V, ID = 0.505 A 1.4 1.2 VGS = 1.8 V, ID = 0.15 A 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74595 S13-0195-Rev. D, 28-Jan-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1046R Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 1.0 RDS(on) - On-Resistance (Ω) ID = 0.606 A I S - Source Current (A) 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.001 0.8 0.6 TA = 125 °C 0.4 TA = 25 °C 0.2 0.0 0 0.3 0.6 0.9 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs Temperature 10 1.0 Limited by RDS(on)* 1 ms 1 ID - Drain Current (A) 0.8 V GS(th) (V) ID = 250 µA 0.6 10 ms 100 ms 0.1 1s 10 s DC 0.01 0.4 TA = 25 °C Single Pulse 0.2 - 50 - 25 0 25 50 75 100 125 150 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified TJ - Temperature (°C) Threshold Voltage Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 540 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74595. www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 74595 S13-0195-Rev. D, 28-Jan-13 This document is subject to change without notice. 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