SI1413DH-T1-E3

Si1413DH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code BC XX YY D Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1413DH-T1-E3 (Lead (Pb)-free) Si1413DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Diode Current (Diode Conduction)a IS TA = 25 °C TA = 85 °C PD - 2.3 - 2.0 - 1.6 -8 - 1.4 A - 0.9 1.56 1.0 0.81 0.52 TJ, Tstg Operating Junction and Storage Temperature Range V - 2.9 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 60 80 100 125 34 45 Unit °C/W Note: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71878 S10-0935-Rev. B, 19-Apr-10 www.vishay.com 1 Si1413DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. VGS(th) VDS = VGS, ID = - 100 µA - 0.45 Max. Unit - 0.8 V nA Static Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea ± 100 -1 VDS = - 16 V, VGS = 0 V, TJ = 85 °C -5 VDS = - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea VDS = 0 V, VGS = ± 8 V VDS = - 16 V, VGS = 0 V µA -4 A VGS = - 4.5 V, ID = - 2.9 A 0.095 0.115 VGS = - 2.5 V, ID = - 2.4 A 0.125 0.155 VGS = - 1.8 V, ID = - 1.0 A 0.180 0.220 gfs VDS = - 10 V, ID = - 2.9 A 6 VSD IS = - 1.4 A, VGS = 0 V - 0.8 - 1.1 6 8.5 Ω S V Dynamicb Qg Total Gate Charge VDS = - 10 V, VGS = - 4.5 V, ID = - 2.9 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.2 Turn-On Delay Time td(on) 13 20 32 50 34 50 42 65 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC 1.2 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 TC = - 55 °C VGS = 5 V thru 2.5 V 6 2V ID - Drain Current (A) ID - Drain Current (A) 6 4 1.5 V 2 25 °C 125 °C 4 2 1V 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3.0 Document Number: 71878 S10-0935-Rev. B, 19-Apr-10 Si1413DH Vishay Siliconix 0.5 1000 0.4 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 1.8 V 0.3 0.2 VGS = 2.5 V VGS = 4.5 V 400 Coss Crss 0 1.5 3.0 4.5 6.0 0 7.5 4 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.6 VDS = 10 V ID = - 2.9 A VGS = 4.5 V ID = - 2.9 A 1.4 RDS(on) - On-Resistance (Normalized) 5 4 3 2 1.2 1.0 0.8 1 0 0.0 1.6 3.2 4.8 6.4 0.6 - 50 8.0 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.5 RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) 8 On-Resistance vs. Drain Current 6 VGS - Gate-to-Source Voltage (V) 600 200 0.1 0.0 0.0 Ciss TJ = 150 °C TJ = 25 °C 1 0.1 0.4 0.3 ID = - 2.9 A 0.2 0.1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71878 S10-0935-Rev. B, 19-Apr-10 6 www.vishay.com 3 Si1413DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 35 ID = 250 µA 28 0.2 21 Power (W) VGS(th) - Variance (V) 0.3 0.1 14 0.0 7 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 1 ms ID - Drain Current (A) Limited by RDS(on)* 1 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71878 S10-0935-Rev. B, 19-Apr-10 Si1413DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 10 1 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71878. Document Number: 71878 S10-0935-Rev. B, 19-Apr-10 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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