SI1865DDL-T1-BE3

Si1865DDL www.vishay.com Vishay Siliconix Load Switch with Level-Shift FEATURES SOT-363 SC-70 (6 leads) ON/OFF 5 R1, C1 6 • Low RDS(on) TrenchFET® • 1.8 V to 12 V input S2 4 • 1.5 V to 8 V logic level control • Low profile, small footprint SC-70-6 package • 2000 V ESD protection on input switch, VON/OFF • Adjustable slew-rate 1 R2 Top View 3 D2 2 D2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switch with level-shift Marking Code: VD • Slew-rate control • Portable / consumer devices PRODUCT SUMMARY VDS (V) 12 RDS(on) () at VIN = 4.5 V 0.200 RDS(on) () at VIN = 2.5 V 0.300 RDS(on) () at VIN = 1.8 V 0.508 ID (A) DESCRIPTION The Si1865DDL includes a p- and n-channel MOSFET in a single SC-70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1865DDL operates on supply lines from 1.8 V to 12 V, and can drive loads up to 1.1 A. ± 1.1 Configuration Level-shift APPLICATION CIRCUITS Si1865DDL 2, 3 4 14 VOUT VIN IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF Q2 R1 C1 6 6 10.5 tr 5 ON/OFF Co LOAD Time (us) tf 7 Q1 td(off) 3.5 Ci td(on) 1 0 R2 0 GND R2 2 4 6 8 10 R2 (kΩ) Switching Variation R2 at VIN = 2.5 V, R1 = 20 k COMPONENTS R1 Pull-up resistor Typical 10 k to 1 M a R2 Optional slew-rate control Typical 0 to 100 k a C1 Optional slew-rate control Typical 1000 pF Note a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on S13-2618-Rev. B, 23-Dec-13 The Si1865DDL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. Document Number: 62888 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1865DDL www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si1865DDL 4 2, 3 S2 D2 Q2 6 R1, C1 Q1 5 ON/OFF 1 R2 ORDERING INFORMATION Package SC-70 Lead (Pb)-free and halogen-free Si1865DDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Input voltage VIN(VDS2) 12 On/off voltage VON/OFF 8 Continuous a, b Load current Continuous intrinsic diode conduction a Operating junction and storage temperature range ESD rating, MIL-STD-883D human body model (100 pF, 1500 ) A ±5 IS Maximum power dissipation a V ± 1.1 IL Pulsed b, c UNIT -0.3 PD 0.357 W TJ, Tstg -55 to 150 °C ESD 2 kV THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient (continuous current) a RthJA 290 350 Maximum junction-to-foot (Q2) RthJF 250 300 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. Reverse leakage current IFL VIN = 12 V, VON/OFF = 0 V - Diode forward voltage VSD IS = -0.8 A - TYP. MAX. UNIT - 1 μA -0.84 -1.2 V V Off Characteristics On Characteristics Input voltage range On-resistance (p-channel) On-state (p-channel) drain-current VIN RDS(on) ID(on) 1.8 - 12 VON/OFF = 1.5 V, VIN = 4.5 V, ID = 1.1 A - 0.165 0.200 VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.9 A - 0.250 0.300 VON/OFF = 1.5 V, VIN = 1.8 V, ID = 0.2 A - 0.376 0.508 VIN-OUT  0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1 - - VIN-OUT 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 - -  A Notes a. Surface mounted on FR4 board b. VIN = 12 V, VON/OFF = 8 V, TA = 25 °C c. Pulse test: pulse width  300 μs, duty cycle  2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2618-Rev. B, 23-Dec-13 Document Number: 62888 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1865DDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 1.8 VGS = 5 V thru 3 V VON/OFF = 1.5 V to 8 V TJ = 125 oC VGS =2.5V 1.4 3 VDROP (V) ID - Drain Current (A) 4 VGS =2V 2 0.9 VGS =1.8V 0.5 1 TJ = 25 oC VGS = 1.5 V 0 0.0 0 0.5 1 1.5 2 0 1.5 3 IL (A) VDS - Drain-to-Source Voltage (V) Output Characteristics 0.5 VON/OFF = 1.5 V to 8 V VON/OFF = 1.5 V to 8 V TJ = 1.2 125 oC TJ = 125 oC 0.4 0.9 VDROP (V) VDROP (V) 6 VDROP vs. IL at VIN = 4.5 V 1.5 0.6 0.3 0.3 0.2 TJ = 25 oC 0.1 TJ = 25 oC 0.0 0.0 0 0.6 1.2 1.8 2.4 3 0 0.2 0.4 IL (A) 0.6 0.8 1 IL (A) VDROP vs. IL at VIN = 2.5 V VDROP vs. IL at VIN = 1.8 V 1.8 0.4 RDS(on) - On-Resistance (Normalized) IL = 1 A VON/OFF = 1.5 V to 8 V 0.3 VDROP (V) 4.5 TJ = 125 °C 0.2 TJ = 25 °C 0.1 1.6 IL = 1 A VON/OFF = 1.5 V to 8 V VGS = 4.5 V 1.4 VGS = 2.5 V 1.2 VGS = 1.8 V 1.0 0.8 0.6 0 0 2 4 VIN - (V) VDROP vs. VIN at IL = 1 A S13-2618-Rev. B, 23-Dec-13 6 8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Normalized On-Resistance vs. Junction Temperature Document Number: 62888 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1865DDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 10 0.3 IS - Source Current (A) RDS(on) - On-Resistance (Ω) IL = 1 A VON/OFF = 1.5 V to 8 V TJ = 125 °C 0.2 TJ = 25 °C 0.1 TJ = 150 °C TJ = 25 °C 1 0.1 0 0 2 4 6 0.0 8 On-Resistance vs. Input Voltage 18 0.4 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage 14 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 13.5 0.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 10.5 tr 9 Time (us) Time (us) tf td(off) 4.5 7 td(off) 3.5 tr td(on) td(on) 0 0 0 2 4 6 8 10 0 2 4 R2 (kΩ) Switching Variation R2 at VIN = 4.5 V, R1 = 20 k 20 8 150 tf 120 Time (us) tr Time (us) 10 Switching Variation R2 at VIN = 2.5 V, R1 = 20 k IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 15 6 R2 (kΩ) 10 tf td(off) 90 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF 60 5 30 td(off) td(on) 0 0 tr td(on) 0 2 4 6 8 10 R2 (kΩ) Switching Variation R2 at VIN = 1.8 V, R1 = 20 k S13-2618-Rev. B, 23-Dec-13 0 20 40 60 80 100 R2 (kΩ) Switching Variation R2 at VIN = 4.5 V, R1 = 300 k Document Number: 62888 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1865DDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 350 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tr 280 IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tr Time (us) Time (us) 150 100 210 140 tf 50 70 td(off) 0 0 20 40 60 tf td(off) td(on) td(on) 0 80 0 100 20 40 60 80 100 R2 (kΩ) R2 (kΩ) Switching Variation R2 at VIN = 2.5 V, R1 = 300 k Switching Variation R2 at VIN = 1.8 V, R1 = 300 k 10 Limited by RDS(on)* ID - Drain Current (A) 100 μs 1 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 1s DC, 10 s BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62888. S13-2618-Rev. B, 23-Dec-13 Document Number: 62888 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000