SI1972DH-T1-GE3

Si1972DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Load Switch for Portable Applications 6 D1 D1 G1 D2 5 2 3 4 G2 S2 CE XX D2 YY Marking Code Lot Traceability and Date Code G1 Part # Code G2 Top View Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 1.3a ID 1.3a TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C 4 1 IS 0.61c TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C 1.25 0.8 PD Soldering Recommendations (Peak Temperature) W 0.74b, c 0.47b, c TA = 70 °C Operating Junction and Storage Temperature Range A 1.2 IDM Continuous Source-Drain Diode Current V 1.3a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, f t5s RthJA 130 170 Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74398 S12-0335-Rev. C, 13-Feb-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1972DH Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ ID = 250 µA VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 23.5 mV/°C - 4.6 2.8 V VDS = 0 V, VGS = ± 20 V ± 100 ns VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 1.5 4 µA A VGS = 10 V, ID = 1.3 A 0.155 0.225 VGS = 4.5 V, ID = 0.29 A 0.278 0.340 VDS = 15 V, ID = 1.3 A 1.4 VDS = 15 V, VGS = 0 V, f = 1 MHz 18 VDS = 15 V, VGS = 10 V, ID = 1.3 A 1.85 2.8 0.91 1.4  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 75 6 VDS = 15 V, VGS = 4.5 V, ID = 1.3 A td(off) 0.51 f = 1 MHz VDD = 15 V, RL = 12.5  ID  1.2 A, VGEN = 4.5 V, Rg = 1  0.9 4.5 9 15 25 50 75 7 15 tf 15 25 td(on) 5 10 10 15 10 15 6 12 tr td(off) nC 0.3 td(on) tr pF VDD = 15 V, RL = 12.5  ID  1.2 A, VGEN = 10 V, Rg = 1  tr  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 1 4 IS = 1.2 A, VGS = 0 V 0.85 1.2 A V Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 18 36 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C 16 4 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74398 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 1.0 VGS = 10 V thru 5 V I D - Drain Current (A) I D - Drain Current (A) 0.8 3 2 4V TC = 125 °C 0.6 TC = 25 °C 0.4 TC = - 55 °C 1 0.2 3V 0 0.0 0.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) 2.0 0 1 2 3 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.6 0.5 0.4 0.3 0.2 Ciss 80 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 4 VGS = 10 V 60 40 Coss 20 0.1 Crss 0 0.0 0 1 2 3 0 4 15 20 On-Resistance vs. Drain Current Capacitance 25 30 1.8 RDS(on) - On-Resistance (Normalized) I D = 1.3 A VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) 10 8 6 VDS = 15 V VDS = 24 V 4 2 0 0.0 5 ID - Drain Current (A) 0.5 1.0 1.5 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74398 S12-0335-Rev. C, 13-Feb-12 2.0 VGS = 10 V and 4.5 V, I D = 1.3 A 1.6 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.6 ID = 1.3 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.5 TJ = 150 °C 1 TJ = 25 °C 0.4 125 °C 0.3 0.2 25 °C 0.1 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage On-Resistance vs. Gate-Source Voltage 2.6 10 5 2.5 4 2.4 Power (W) VGS(th) (V) 2.3 2.2 ID = 250 µA 2.1 2.0 3 2 1.9 1.8 1 1.7 1.6 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.01 0.1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 10 Limited by R DS(on)* I D - Drain Current (A) 100 µs 1 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 * VGS 1 s, 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74398 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.4 1.4 1.2 Power Dissipation (W) I D - Drain Current (A) 2.0 1.6 Package Limited 1.2 0.8 0.4 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 T C - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74398 S12-0335-Rev. C, 13-Feb-12 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwiese noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74398. www.vishay.com 6 Document Number: 74398 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000