SI2333DS-T1-E3

Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • PA Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2333DS (E3)* * Marking Code Ordering Information: Si2333DS-T1-E3 (Lead (Pb)-free) Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a, b IS TA = 25 °C TA = 70 °C PD - 4.1 - 4.2 - 3.3 - 20 - 1.0 - 0.6 1.25 0.75 0.8 0.48 TJ, Tstg Operating Junction and Storage Temperature Range V - 5.3 IDM Pulsed Drain Current Maximum Power Dissipationa, b ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 72023 S09-0130-Rev. C, 02-Feb-09 www.vishay.com 1 Si2333DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = - 250 µA - 12 VGS(th) VDS = VGS, ID = - 250 µA - 0.40 IGSS VDS = 0 V, VGS = ± 8 V ± 100 VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 55 °C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea RDS(on) VDS ≤ - 5 V, VGS = - 4.5 V - 1.0 - 20 V nA µA A VGS = - 4.5 V, ID = - 5.3 A 0.025 0.032 VGS = - 2.5 V, ID = - 4.6 A 0.033 0.042 VGS = - 1.8 V, ID = - 2.0 A 0.046 0.059 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.3 A 17 Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.7 - 1.2 11.5 18 Ω S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 6 V, VGS = - 4.5 V ID ≅ - 5.3 A nC 1.5 3.2 1100 VDS = - 6 V, VGS = 0 V, f = 1 MHz pF 390 300 Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω 25 40 45 70 72 110 60 90 ns Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72023 S09-0130-Rev. C, 02-Feb-09 Si2333DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 5 V thru 2.5 V TC = - 55 °C 2V 25 °C 16 ID - Drain Current (A) ID - Drain Current (A) 16 12 8 1.5 V 4 125 °C 12 8 4 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.15 1800 1500 0.12 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V 0.03 1200 Ciss 900 600 Coss Crss 300 VGS = 4.5 V 0.00 0 0 4 8 12 16 20 0 6 9 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 12 1.4 VDS = 6 V ID = 5.3 A 4 1.3 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3 ID - Drain Current (A) 3 2 1 VGS = 4.5 V ID = 5.3 A 1.2 1.1 1.0 0.9 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72023 S09-0130-Rev. C, 02-Feb-09 15 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2333DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.15 20 TJ = 150 °C R DS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.12 0.09 ID = 5.3 A ID = 2 A 0.06 0.03 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 5 12 ID = 140 µA 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 1 0.1 6 4 0.0 TA = 25 °C 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 IDM Limited Limited by RDS(on)* P(t) = 0.0001 ID - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 72023 S09-0130-Rev. C, 02-Feb-09 Si2333DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72023. Document Number: 72023 S09-0130-Rev. C, 02-Feb-09 www.vishay.com 5 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000