Si4310BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Channel-1
30
Channel-2
ID (A)
0.011 at VGS = 10 V
10
0.016 at VGS = 4.5 V
8.2
0.0085 at VGS = 10 V
14
0.0095 at VGS = 4.5 V
13
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
- Game Stations
- Video Equipment
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.53 V at 3 A
2
SO-14
D1
D1
G1
14
S1
2
13
S1
3
12
D2
1
G2
4
11
D2
S2
5
10
D2
S2
6
9
D2
S2
7
8
D2
D2
D1
Schottky Diode
G2
G1
Top View
S2
S1
Ordering Information: Si4310BDY-T1-E3 (Lead (Pb)-free)
Si4310BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 2
MOSFET
N-Channel 1
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Channel-1
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
10 s
Continuous Source Current (Diode Conduction)a
TA = 25 °C
Maximum Power Dissipationa
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
Steady State
10 s
Steady State
30
± 20
7.5
14
9.8
8
6
11
7.8
40
1.8
50
1.04
2.73
1.33
2
1.14
3.0
1.47
1.28
0.73
1.9
0.94
TJ, Tstg
Unit
V
± 20
10
IDM
Pulsed Drain Current
Channel-2
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Channel-2
Schottky
Typ.
Max.
Typ.
Max.
Typ.
Max.
53
62.5
34
35
40
48
92
110
70
72
76
93
35
42
17
24
21
26
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
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Si4310BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 85 °C
b
On-State Drain Current
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
ID(on)
RDS(on)
gfs
VSD
VDS = 5 V, VGS = 10 V
Ch-1
1.0
3.0
Ch-2
1.0
3.0
Ch-1
100
Ch-2
100
Ch-1
1
Ch-2
100
Ch-1
15
Ch-2
V
nA
µA
4000
Ch-1
20
Ch-2
30
A
VGS = 10 V, ID = 10 A
Ch-1
0.009
VGS = 10 V, ID = 14 A
Ch-2
0.0065 0.0085
VGS = 4.5 V, ID = 8.2 A
Ch-1
0.013
VGS = 4.5 V, ID = 13 A
Ch-2
0.0075 0.0095
VDS = 15 V, ID = 10 A
Ch-1
30
VDS = 15 V, ID = 14 A
Ch-2
60
IS = 1.8 V, VGS = 0 V
Ch-1
0.76
1.1
IS = 2.73 V, VGS = 0 V
Ch-2
0.485
0.53
0.011
0.016
Ω
S
V
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgs
Qgd
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 14 A
4590
Ch-1
145
290
435
Ch-2
300
600
900
Ch-1
70
140
210
Ch-2
115
225
340
Ch-1
12
18
Ch-2
19
30
Ch-1
5.3
Ch-2
10
Ch-1
4.3
5
2.7
Ch-2
0.3
0.95
1.4
Ch-1
13
20
Ch-2
17
26
Ch-1
10
15
Ch-2
12
20
Ch-1
33
50
Ch-2
53
80
Ch-1
10
15
Ch-2
17
26
IF = 1.8 A, dI/dt = 100 A/µs
Ch-1
25
40
IF = 2.73 V, dI/dt = 100 A/µs
Ch-2
31
50
Channel-2
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
pF
nC
1.8
Channel-1
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
trr
2370
3060
0.90
td(on)
tf
1580
1530
Ch-1
f = 1 MHz
td(off)
790
Ch-2
Ch-2
Rg
tr
Ch-1
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
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Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
Si4310BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
VF
Forward voltage Drop
Irm
Maximum Reverse Leakage Current
CT
Junction Capacitance
Typ.
Max.
IF = 3 A
Min.
0.485
0.53
IF = 3 A, TJ = 125 °C
0.42
0.42
VR = 30 V
0.008
0.100
VR = 30 V, TJ = 75 °C
0.4
5
VR = 30 V, TJ = 125 °C
0.5
20
VR = 15 V
102
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
35
4V
30
I D - Drain Current (A)
30
I D - Drain Current (A)
35
VGS = 10 V thru 5 V
25
20
15
25
20
15
TC = 125 °C
10
10
5
5
25 °C
3V
- 55 °C
0
0.0
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.020
2000
0.016
1600
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
0.012
VGS = 10 V
0.008
1200
800
Coss
0.004
400
0.000
0
Crss
0
5
10
15
20
25
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
30
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
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Si4310BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
VDS = 15 V
ID = 10 A
VGS = 10 V
ID = 10 A
8
6
4
2
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.2
1.0
0.8
0
0
5
10
15
20
0.6
- 50
25
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
0.05
30
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 10 A
TJ = 150 C
10
TJ = 25 C
1
0.0
0.04
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
200
0.2
160
0.0
Power (W)
VGS(th) Variance (V)
ID = 250 µA
- 0.2
120
80
- 0.4
40
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
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4
100
125
150
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
Si4310BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
0.1
1s
10 s
DC
TC = 25 C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 92 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
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Si4310BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
30
20
TC = 125 °C
10
10
3V
25 °C
- 55 °C
0
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.015
4000
Ciss
0.009
VGS = 4.5 V
0.006
3000
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
3500
0.012
VGS = 10 V
2500
2000
1500
1000
Coss
0.003
500
Crss
0
0.000
0
10
20
30
40
0
50
5
ID - Drain Current (A)
10
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
6
VDS = 15 V
ID = 14 A
5
VGS = 10 V
ID = 14 A
R DS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
15
4
3
2
1
0
0
5
10
15
Qg - Total Gate Charge (nC)
Gate Charge
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20
25
1.4
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
ID - Drain Current (A)
On-Resistance vs. Junction Temperature
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
Si4310BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
0.020
ID = 14 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.0
0.016
0.012
0.008
0.004
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
10
200
160
1
VDS = 24 V
Power (W)
I R - Reverse Current (mA)
10
VDS = 30 V
0.1
120
80
0.01
40
0.001
0.0001
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power
Reverse Current vs. Junction Temperature
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
0.01
0.1
TC = 25 C
Single Pulse
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
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Si4310BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 92 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
5
1
I F - Forward Current (A)
I R - Reverse Current (mA)
10
30 V
0.1
20 V
0.01
TJ = 25 °C
TJ = 150 °C
1
0.001
0.1
0.0001
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
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150
0
0.2
0.4
0.6
0.8
VF - Forward Voltage Drop (V)
Forward Voltage Drop
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
Si4310BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
C T - Junction Capacitance (pF)
500
400
300
200
100
0
0
6
12
18
24
30
VKA - Reverse Voltage (V)
Capacitance
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = RthJA = 100 °C/W
t1
t2
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73064.
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
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Revision: 01-Jan-2022
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Document Number: 91000