SI4310BDY

Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel 1 30 Channel-2 Channel 2 rDS(on) (W) 0.011 @ VGS = 10 V 0.016 @ VGS = 4.5 V 0.0085 @ VGS = 10 V 0.0095 @ VGS = 4.5 V FEATURES ID (A) 10 8.2 14 13 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D DC/DC Converters − Game Stations − Video Equipment SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 2.0 SO-14 D1 D1 G1 G2 S2 S2 S2 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 S1 S1 D2 D2 D2 D2 D2 Ordering Information: Si4310BDY—E3 Si4310BDY-T1—E3 (with Tape and Reel) G1 D1 D2 G2 Schottky Diode S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State "20 Steady State "20 Unit V 10 8 40 1.8 2 1.28 7.5 6 1.04 1.14 0.73 −55 to 150 14 11 50 2.73 3.0 1.9 9.8 7.8 1.33 1.47 0.94 W _C A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com t v 10 sec Steady-State Steady-State Channel-2 Typ 34 70 17 Schottky Typ 40 76 21 Symbol RthJA RthJF Typ 53 92 35 Max 62.5 110 42 Max 35 72 24 Max 48 93 26 Unit _C/W 1 Si4310BDY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Gate Body Leakage VGS( h) GS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85_C V On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 10 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 8.2 A VGS = 4.5 V, ID = 13 A Forward Transconductanceb Diode Forward Voltageb gf fs VSD VDS = 15 V, ID = 10 A VDS = 15 V, ID = 14 A IS = 1.8 A, VGS = 0 V IS = 2.73 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.009 0.0065 0.013 0.0075 30 60 0.76 0.485 1.1 0.53 0.011 0.0085 0.016 0.0095 S V W 1.0 1.0 3.0 3.0 100 100 1 100 15 4000 A mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Ciiss Coss Crss Qg Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr IF = 1.8 A, di/dt = 100 A/ms IF = 2.73 A, di/dt = 100 mA/ms Channel-1 Channel 1 VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel 2 Channel-2 VDD = 15 V RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz VDS = 15 V, VGS = 0 V, f= 1 MHz V f= Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Channel 2 Channel-2 VDS = 15 V, VGS = 4.5 V ID = 14 A V V, Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.90 0.3 790 1530 145 300 70 115 1580 3060 290 600 140 225 12 19 5.3 10 4.3 5 1.8 0.95 13 17 10 12 33 53 10 17 25 31 2,7 1.4 20 26 15 20 50 80 15 26 40 50 ns W 2370 4590 435 900 210 340 18 30 nC pF Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 73064 S-41530—Rev. A, 16-Aug-04 Si4310BDY New Product SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Vishay Siliconix Symbol VF Test Condition IF = 3 A IF = 3 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 75_C Vr = −30 V, TJ = 125_C Vr = 15 V Min Typ 0.485 0.42 0.008 0.4 6.5 102 Max 0.53 0.42 0.100 5 20 Unit V Maximum Reverse Leakage Current g Junction Capacitance Irm CT mA pF TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 35 I D − Drain Current (A) 30 25 20 15 10 5 3V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 VGS = 10 thru 5 V I D − Drain Current (A) 4V 40 35 30 25 20 15 10 5 TC = 125_C CHANNEL-1 Transfer Characteristics 25_C −55_C 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.020 r DS(on) − On-Resistance ( W ) 2000 Capacitance Ciss C − Capacitance (pF) 0.016 VGS = 4.5 V 1600 0.012 VGS = 10 V 0.008 1200 800 0.004 400 Crss Coss 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com 3 Si4310BDY Vishay Siliconix New Product CHANNEL-1 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 10 A rDS(on) − On-Resiistance (Normalized) 8 1.4 VGS = 10 V ID = 10 A TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS − Gate-to-Source Voltage (V) 6 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.05 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 TJ = 150_C r DS(on) − On-Resistance ( W ) 0.04 0.03 ID = 10 A 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 ID = 250 mA V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −50 40 Power (W) 120 200 Single Pulse Power 160 80 0 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 1 10 TJ − Temperature (_C) www.vishay.com 4 Si4310BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 100 Vishay Siliconix CHANNEL-1 Safe Operating Area, Junction-to-Case Limited by rDS(on) I D − Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com 5 Si4310BDY Vishay Siliconix New Product CHANNEL-2 Transfer Characteristics 50 VGS = 10 thru 4 V TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 40 I D − Drain Current (A) 40 I D − Drain Current (A) 30 30 20 20 TC = 125_C 10 25_C −55_C 10 3V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.015 r DS(on) − On-Resistance ( W ) 4000 3500 C − Capacitance (pF) 0.012 3000 2500 2000 1500 1000 500 0.000 0 10 20 30 40 50 0 0 5 10 Crss Capacitance Ciss 0.009 VGS = 4.5 V VGS = 10 V 0.006 0.003 Coss 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 5 10 15 20 25 Qg − Total Gate Charge (nC) www.vishay.com VDS = 15 V ID = 14 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 14 A 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 6 Si4310BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 TJ = 150_C I S − Source Current (A) 0.020 Vishay Siliconix CHANNEL-2 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.016 ID = 14 A 0.012 10 0.008 TJ = 25_C 0.004 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Reverse Current vs. Junction Temperature 100 10 1 VDS = 30 V 0.1 VDS = 24 V Power (W) 200 Single Pulse Power I R − Reverse Current (mA) 160 120 80 0.01 40 0.001 0.0001 0 25 50 75 100 125 150 TJ − temperature (_C) 0 0.001 0.01 0.1 Time (sec) 1 10 100 Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area, Junction-to-Case 1 ms 1 10 ms 100 ms 0.1 1s TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com 7 Si4310BDY Vishay Siliconix New Product CHANNEL-2 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 100 10 I R − Reverse Current (mA) I F − Forward Current (A) 1 TJ = 150_C 1 5 SCHOTTKY Forward Voltage Drop 0.1 30 V 20 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 0.1 0 0.2 0.4 0.6 0.8 VF − Forward Voltage Drop (V) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 8 Si4310BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 500 Vishay Siliconix SCHOTTKY Capacitance C T − Junction Capacitance (pF) 400 300 200 100 0 0 6 12 18 24 30 VKA − Reverse Voltage (V 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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