Si4324DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0032 at VGS = 10 V
36
0.0042 at VGS = 4.5 V
29
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Qg (Typ.)
25.5 nC
APPLICATIONS
• Synchronous Buck-Low Side
- Notebook
- Server
- Workstation
• Synchronous Rectifier-POL
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
5
D
G
4
D
G
Top View
S
Ordering Information: Si4324DY-T1-E3 (Lead (Pb)-free)
Si4324DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Operating Junction and Storage Temperature Range
Unit
30
± 20
36
29
V
24b, c
19b, c
70
7.0
A
3.0b, c
40
80
7.8
5.0
mJ
W
3.5b, c
2.2b, c
- 55 to 150
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, d
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
Maximum
Unit
29
13
35
16
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
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Si4324DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
34
mV/°C
- 6.4
1.4
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
30
µA
A
VGS = 10 V, ID = 20 A
0.0025
0.0032
VGS = 4.5 V, ID = 15 A
0.0034
0.0042
VDS = 15 V, ID = 20 A
80
Ω
S
b
Dynamic
Input Capacitance
ciss
Output Capacitance
coss
Reverse Transfer Capacitance
crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
3510
VDS = 15 V, VGS = 0 V, f = 1 MHz
795
VDS = 15 V, VGS = 10 V, ID = 20 A
55.5
85
25.5
40
265
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
nC
6.6
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
td(on)
Turn-on Delay Time
11.6
VDS = 15 V, VGS = 4.5 V, ID = 20 A
td(on)
Turn-on Delay Time
pF
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
0.6
1.25
1.9
30
45
185
280
30
45
13
20
17
26
90
140
37
56
10
16
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
7
ISM
VSD
70
IS = 3 A
0.72
1.1
A
V
Body Diode Reverse Recovery Time
trr
40
60
ns
Body Diode Reverse Recovery Charge
Qrr
40
60
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C
21
19
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
Si4324DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
1.2
VGS = 10 V thru 4 V
1.0
50
ID - Drain Current (A)
ID - Drain Current (A)
60
40
30
20
0.8
0.6
0.4
TC = 125 °C
3V
0.2
10
0
0.0
25 °C
- 55 °C
0.3
0.6
0.9
1.2
0.0
1.0
1.5
1.4
1.8
2.2
2.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
4000
0.005
Ciss
3000
0.004
C - Capacitance (pF)
RDS(on) - On-Resistance (mΩ)
3500
VGS = 4.5 V
0.003
VGS = 10 V
2500
2000
1500
Coss
1000
0.002
Crss
500
0
0.001
0
10
20
30
40
50
0
60
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
ID = 20 A
1.6
8
VDS = 10 V
6
RDS(on) - On-Resistance
(Normalized)
VG S - Gate-to-Source Voltage (V)
18
VDS = 15 V
VDS = 20 V
4
2
ID = 20 A
VGS = 10 V
1.4
1.2
VGS = 4.5 V
1.0
0.8
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
50
60
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4324DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.015
RDS(on) - Drain-to-Source On-Resistance (Ω)
50
10
IS - Source Current (A)
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
ID = 20 A
0.012
0.009
0.006
TJ = 125 °C
0.003
TJ = 25 °C
0.000
0.001
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
160
10
- 0.1
Power (W)
VGS(th) (V)
ID = 250 µA
ID = 5 mA
- 0.4
120
80
- 0.7
- 1.0
- 50
40
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
1 ms
ID - Drain Current (A)
10
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
DC
0.01
0.1
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
Si4324DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
40
ID - Drain Current (A)
35
30
Package Limited
25
20
15
10
5
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
10
2.0
8
1.6
Power (W)
Power (W)
Current Derating*
6
4
2
1.2
0.8
0.4
0
0.0
0
25
50
75
100
125
150
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
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Si4324DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73340.
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Document Number: 73340
S09-0226-Rev. C, 09-Feb-09
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Revision: 01-Jan-2022
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Document Number: 91000