SI4401DY-T1-E3

Si4401DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0155 at VGS = - 10 V - 10.5 0.0225 at VGS = - 4.5 V - 8.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs S SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G Top View D Ordering Information: Si4401DY-T1-E3 (Lead (Pb)-free) Si4401DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 8.7 - 8.3 - 5.9 - 50 - 2.7 A - 1.36 3.0 1.5 1.9 0.95 TJ, Tstg Operating Junction and Storage Temperature Range V - 10.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 33 42 70 84 16 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71226 S09-0322-Rev. D, 02-Mar-09 www.vishay.com 1 Si4401DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. VGS(th) VDS = VGS, ID = - 250 µA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 32 V, VGS = 0 V -1 VDS = - 32 V, VGS = 0 V, TJ = 70 °C - 10 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a µA A 0.013 0.0155 VGS = - 4.5 V, ID = - 8.7 A 0.0185 0.0225 gfs VDS = - 15 V, ID = - 10.5 A 26 VSD IS = - 2.7 A, VGS = 0 V - 0.74 - 1.1 37.5 50 RDS(on) nA - 30 VGS = - 10 V, ID = - 10.5 A Forward Transconductancea Diode Forward Voltage VDS = - 5 V, VGS = - 10 V V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = - 15 V, VGS = - 5 V, ID = - 10.5 A 10.7 VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time nC 14.3 17 30 18 30 122 190 85 ns tf 55 Gate Resistance Rg 3.8 Ω Source-Drain Reverse Recovery Time trr 45 ns Fall Time IF = - 2.1 A, dI/dt = 100 A/µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 V thru 5 V 4V 40 I D - Drain Current (A) ID - Drain Current (A) 40 30 20 10 30 20 TC = 125 °C 10 3V 25 °C - 55 °C 2V 0 0 www.vishay.com 2 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 4.5 Document Number: 71226 S09-0322-Rev. D, 02-Mar-09 Si4401DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.040 6500 0.032 5200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.024 VGS = 4.5 V 0.016 VGS = 10 V 2600 Coss 1300 0.008 Crss 0 0.000 0 10 20 30 40 0 50 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 10 VDS = 15 V ID = 10.5 A 8 VGS = 10 V ID = 10.5 A 1.6 R DS(on) - On-Resistance (Normalized) VG S - Gate-to-Source Voltage (V) 3900 6 4 2 1.4 1.2 1.0 0.8 0.6 - 50 0 0 15 30 45 60 75 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.06 50 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.05 TJ = 150 °C 10 TJ = 25 °C 0.04 ID = 10.5 A 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71226 S09-0322-Rev. D, 02-Mar-09 10 www.vishay.com 3 Si4401DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.8 80 0.4 ID = 250 µA Power (W) V GS(th) Variance (V) 0.6 0.2 60 40 0.0 20 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.001 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71226. www.vishay.com 4 Document Number: 71226 S09-0322-Rev. D, 02-Mar-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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