SI4561DY-T1-E3

Si4561DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a RDS(on) (Ω) 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.035 at VGS = - 10 V - 7.2 0.047 at VGS = - 4.5 V - 6.2 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET 5.3 APPLICATIONS 17 • Backlight Inverter for LCD Display D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View Ordering Information: Si4561DY-T1-E3 (Lead (Pb)-free) Si4561DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) 6.8 - 7.2 TC = 70 °C 5.4 - 5.7 ID TA = 70 °C IDM Pulsed Drain Current Source-Drain Current Diode Current TC = 25 °C TA = 25 °C 5.6 b, c - 5.6b, c 4.4 b, c - 4.4b, c 20 IS 2.5 - 2.5 1.6b, c - 1.6b, c - 20 ISM 20 Single Pulse Avalanche Current IAS 7 15 EAS 2.45 11.25 L = 0 1 mH Maximum Power Dissipation A - 20 Pulsed Source-Drain Current Single Pulse Avalanche Energy V ± 20 TC = 25 °C TA = 25 °C mJ TC = 25 °C 3.0 3.3 TC = 70 °C 1.9 2.10 2.0b, c 2.0b, c 1.25b, c 1.25b, c TA = 25 °C PD TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) P-Channel Symbol Typ. Max. Typ. Max. t ≤ 10 s RthJA 54 64 50 62.5 Steady State RthJF 33 42 31 37 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W. Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 www.vishay.com 1 Si4561DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 V ID = 250 µA N-Ch 44 ID = - 250 µA P-Ch - 41 ID = 250 µA N-Ch - 5.5 mV/°C IID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1.4 3.0 VDS = VGS, ID = - 250 µA P-Ch - 1.4 - 3.0 VDS = 0 V, VGS = ± 20 V 4.3 N-Ch 100 P-Ch - 100 VDS = 40 V, VGS = 0 V N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 10 VDS = - 5 V, VGS = - 10 V P-Ch - 10 VGS = 10 V, ID = 5 A N-Ch V nA µA A 0.0295 0.0355 VGS = - 10 V, ID = - 5 A P-Ch 0.0285 0.035 VGS = 4.5 V, ID = 4 A N-Ch 0.0355 0.0425 VGS = - 4.5 V, ID = - 4 A P-Ch 0.037 0.047 VDS = 15 V, ID = 5 A N-Ch 22 VDS = - 15 V, ID = - 5 A P-Ch 20 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Crss Qg N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz 640 P-Ch 1555 N-Ch 73 P-Ch 176 pF N-Ch 41 P-Ch 142 VDS = 20 V, VGS = 10 V, ID = 5 A N-Ch 11.7 20 VDS = - 20 V, VGS = - 10 V, ID = - 5 A P-Ch 38.5 60 N-Ch 5.3 9 N-Channel VDS = 20 V, VGS = 4.5 V ID = 5 A P-Ch 17 27 N-Ch 1.9 P-Ch 4.2 N-Ch 1.7 P-Ch 7.0 N-Ch 2.2 P-Ch 3 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A Gate Resistance Rg f = 1 MHz www.vishay.com 2 N-Ch nC Ω Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 Si4561DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamic Symbol Test Conditions Min. Typ.a Max. Unit a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tr P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω td(off) tf td(on) N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tr tf P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 16 Ω IS TC = 25 °C td(off) N-Ch 7 14 P-Ch 11 20 N-Ch 10 20 P-Ch 15 30 N-Ch 15 30 P-Ch 36 60 N-Ch 9 18 P-Ch 9 18 N-Ch 16 30 80 P-Ch 49 N-Ch 17 30 P-Ch 79 120 N-Ch 16 30 P-Ch 35 60 N-Ch 10 20 P-Ch 14 25 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM N-Ch 2.5 P-Ch - 2.5 N-Ch 20 P-Ch VSD - 20 IS = 1.6 A N-Ch 0.78 1.2 IS = - 1.6 A P-Ch - 0.74 - 1.2 trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 19 30 P-Ch 22 40 N-Ch 14 25 P-Ch 22 35 N-Ch 13 P-Ch 15 N-Ch 6 P-Ch 7 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 www.vishay.com 3 Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 5 V 4V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 3 TC = 25 °C 2 1 TC = 125 °C 3V 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.060 800 0.052 640 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.044 VGS = 4.5 V 0.036 VGS = 10 V 480 320 Coss 0.028 160 0.020 0 0 6 12 18 24 30 Crss 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 5 A ID = 5 A VDS = 10 V VDS = 30 V 4 2 VGS = 4.5 V 1.2 1.0 0.8 2.5 5.0 7.5 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 1.4 (Normalized) VDS = 20 V 6 0 0.0 VGS = 10 V 1.6 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 100 ID = 5 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.16 0.12 0.08 TA = 125 °C 0.04 TA = 25 °C 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 8 10 On-Resistance vs. Gate-to-Source Voltage 80 0.4 0.2 ID = 250 µA 64 ID = 5 mA Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.0 4 - 0.2 48 32 - 0.4 16 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 www.vishay.com 5 Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 I D - Drain Current (A) 6 5 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 www.vishay.com 7 Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 3V 6 3 TC = 25 °C 2 1 TC = 125 °C 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 4 Transfer Characteristics 0.050 2500 0.044 2000 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 4.5 V 0.038 2 0.032 VGS = 10 V 1500 1000 Coss 0.026 500 0.020 0 Crss 0 6 12 18 24 30 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 5 A ID = 5 A VDS = 10 V VGS = 10 V 1.6 8 VDS = 20 V 6 VDS = 30 V 4 2 1.4 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 VGS = 4.5 V 1.2 1.0 0.8 0 0 8 16 24 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 32 40 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A TJ = 25 °C 10 0.09 0.06 TA = 125 °C 0.03 TA = 25 °C 0 1 0.0 0.3 0.6 0.9 1.2 1.5 0 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 100 0.7 80 0.5 ID = 250 µA 0.3 Power (W) V GS(th) Variance (V) 2 ID = 5 mA 0.1 - 0.1 - 0.3 - 50 60 40 20 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 www.vishay.com 9 Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 I D - Drain Current (A) 6 5 3 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69730. Document Number: 69730 S09-0220-Rev. C, 09-Feb-09 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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