SI4914BDY-T1-E3

Si4914BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V 8d 6.7 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Integrated Schottky • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 7.0 APPLICATIONS • Notebook PC - System Power dc-to-dc SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 D1 SO-8 G1 D1 1 8 G1 D1 2 7 S1/D2 G2 3 6 S1/D2 S2 4 5 S1/D2 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 Top View N-Channel 2 MOSFET Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C ISM PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy IS L = 0.1 mH Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C 7.4 7.4b, c 5.3b, c 5.7b, c 40 40 2.4 2.8 1.0b, c 1.1b, c 40 40 IAS 15 11.2 PD TA = 70 °C Operating Junction and Storage Temperature Range 6.7 6.7b, c EAS TC = 25 °C TJ, Tstg V 8d 8.4 ID 3.1 1.7 2.0 b, c 2.0b, c 1.1b, c 1.2b, c - 55 to 150 A mJ 2.7 1.7 Unit W °C Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Package limited. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 1 Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Typ. Max. Typ. Max. t ≤ 10 s RthJA 59 70 52 62.5 Steady State RthJF 36 45 32 40 Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Channel-2 Symbol Parameter Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS = 0 V, ID = 250 µA ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) RDS(on) gfs VSD Ch-1 30 Ch-2 30 Ch-1 V 35 Ch-1 mV/°C - 6.2 Ch-1 1.2 2.7 Ch-2 1.2 2.7 Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 V nA µA 10000 VDS = 5 V, VGS = 10 V Ch-1 20 Ch-2 20 VGS = 10 V, ID = 8 A Ch-1 0.0165 0.021 VGS = 10 V, ID = 8 A Ch-2 0.0155 0.020 VGS = 4.5 V, ID = 6 A Ch-1 0.0215 0.027 VGS = 4.5 V, ID = 6 A Ch-2 0.020 0.025 VDS = 15 V, ID = 8 A Ch-1 29 VDS = 15 V, ID = 8 A Ch-2 33 IS = 1.7 A, VGS = 0 V Ch-1 0.77 1.1 IS = 1 A, VGS = 0 V Ch-2 0.46 0.5 A Ω S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance www.vishay.com 2 Qg Ch-1 6.7 10.5 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-2 7.0 11.0 Ch-1 2.8 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-2 2.8 Ch-1 2.0 Ch-2 2.0 Ch-1 2.9 6.0 Ch-2 2.0 4.0 Qgs Qgd Rg nC Ω Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typ.a Max. Ch-1 9 18 Ch-2 10 20 Ch-1 10 20 Ch-2 9 18 Ch-1 16 32 Ch-2 16 32 Ch-1 9 18 Ch-2 8 16 IF = 2.2 A, dI/dt = 100 A/µs Ch-1 35 55 35 Test Conditions Min. Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω IF = 2.2 A, dI/dt = 100 A/µs Ch-2 21 IF = 2.2 A, dI/dt = 100 A/µs Ch-1 40 IF = 2.2 A, dI/dt = 100 A/µs Ch-2 11 IF = 2.2 A, dI/dt = 100 A/µs Ch-1 19 IF = 2.2 A, dI/dt = 100 A/µs Ch-2 11 IF = 2.2 A, dI/dt = 100 A/µs Ch-1 16 IF = 2.2 A, dI/dt = 100 A/µs Ch-2 10 ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 3 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 2.0 VGS = 10 V thru 5 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 40 4V 30 20 1.2 TC = 25 °C 0.8 10 0.4 TC = 125 °C 3V 0 TJ = - 55 °C 0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 1000 0.04 800 5 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.03 VGS = 4.5 V 0.02 600 400 VGS = 10 V 0.01 200 0 0 0 10 20 30 40 50 Coss Crss 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.7 10 ID = 8 A ID = 7 A VDS = 10 V VGS = 10 V 1.5 VDS = 15 V 6 VDS = 20 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 12.8 16.0 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 100 TJ = 150 °C R DS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.08 0.06 0.04 TA = 125 °C 0.02 TA = 25 °C 0 0.001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 100 0.5 ID = 250 µA 80 ID = 5 mA - 0.1 Power (W) VGS(th) Variance (V) 0.2 - 0.4 40 20 - 0.7 - 1.0 - 50 60 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 5 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 I D - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 2.1 0.9 Power (W) Power (W) Current Derating* 1.4 0.6 0.3 0.7 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 7 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 50 VGS = 10 V thru 5 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 40 4V 30 20 1.2 TJ = 25 °C 0.8 0.4 10 TJ = 125 °C 3V TJ = - 55 °C 0 0 0 0.5 1.0 1.5 2.0 0 2.5 1.2 2.4 3.6 4.8 6.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 1200 0.034 960 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.028 VGS = 4.5 V 0.022 VGS = 10 V 720 480 Coss 0.016 240 0.010 0 0 10 20 30 40 50 Crss 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.7 ID = 8 A ID = 7.5 A VDS = 10 V 8 VGS = 10 V VDS = 15 V 6 VDS = 20 V 4 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.3 VGS = 4.5 V 1.1 0.9 0 0 www.vishay.com 8 3.4 6.8 10.2 13.6 17.0 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 R DS(on) - On-Resistance (Ω) IS - Source Current (A) 100 10 TJ = 150 °C 1 TJ = 25 °C 0.08 0.06 0.04 TA = 125 °C 0.02 TA = 25 °C 0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10-1 10 100 VDS = 20 V 80 VDS = 30 V 10-3 Power (W) I R - Reverse (A) 10-2 VDS = 10 V 10-4 10-5 60 40 20 10-6 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Reverse Current Schottky Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 9 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 11.0 I D - Drain Current (A) 8.8 Package Limited 6.6 4.4 2.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 115 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69654. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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