SI4914DY-T1-E3

Si4914DY Vishay Siliconix New Product Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 • LITTLE FOOT® Plus Integrated Schottky • 100 % Rg Tested ID (A) 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V 5.6 0.020 at VGS = 10 V 7.4 0.027 at VGS = 4.5 V 6.4 RoHS APPLICATIONS COMPLIANT • Logic DC/DC - Notebook PC SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.40 V at 1.0 A 2.0 D1 SO-8 D1 G1 8 G1 2 7 S1/D2 G2 3 6 S1/D2 S2 4 5 S1/D2 D1 1 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 N-Channel 2 MOSFET Top View Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free) S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 10 sec Channel-2 Steady State 10 sec Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C 7.0 5.6 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L = 0.1 mH Avalanche Energy Maximum Power Dissipationa ID TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS 5.5 7.4 4.3 6 5.7 4.5 1.8 0.95 IAS 13 15 EAS 8.45 11 PD A 40 1.0 mJ 1.9 1.1 2.0 1.16 1.2 0.71 1.3 0.74 TJ, Tstg Unit V 40 1.7 Steady State - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF Channel-1 Typ Channel-2 Max Typ Max 52 65 47 60 90 112 85 107 30 38 28 35 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 1 Si4914DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb Drain-Source On-State Resistanceb VDS = 5 V, VGS = 10 V ID(on) VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.4 A VGS = 4.5 V, ID = 5.6 A VGS = 4.5 V, ID = 6.4 A VDS = 15 V, ID = 7.0 A VDS = 15 V, ID = 7.4 A IS = 1.7 A, VGS = 0 V IS = 1 A, VGS = 0 V rDS(on) Forward Transconductanceb gfs Diode Forward Voltageb VSD Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1.0 1.0 2.5 2.5 100 100 1 500 0.015 20 20 20 V nA µA mA A 0.019 0.016 0.026 0.022 19 22 0.75 0.36 0.023 0.020 0.032 0.027 5.6 7.3 2.3 2.8 1.7 2.2 2.3 1.6 6 7 13 13 27 35 9 10 30 30 8.5 11 Ω S 1.1 0.40 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) tr Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 7.0 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 7.4 A Channel-1 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.3 A, di/dt = 100 A/µs IF = 2.2 A, di/dt = 100 µA/µs Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.5 0.5 nC 3.6 2.5 10 11 20 20 40 53 15 15 50 50 Ω ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 1.0 A IF = 1.0 A, TJ = 150 °C Vr = 30 V Vr = 30 V, TJ = 100 °C Vr = - 30 V, TJ = 125 °C Vr = 10 V Min Typ 0.36 0.27 0.008 3.5 10 58 Max 0.40 0.31 0.50 10 100 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 40 40 VGS = 10 thru 4 V 32 30 I D – Drain Current (A) I D – Drain Current (A) 35 25 20 15 3V 10 24 16 TC = 125 °C 8 5 25 °C 0 0 1 2 3 4 0 0.0 5 0.5 1.0 VDS – Drain-to-Source Voltage (V) 0.05 1000 0.04 800 C – Capacitance (pF) DS(on) – On-Resistance (Ω) 2.5 3.0 3.5 4.0 4.5 Transfer Characteristics 0.03 VGS = 4.5 V VGS = 10 V 0.02 Ciss 600 400 Coss 200 0.01 Crss 0 0.00 0 5 10 15 20 25 30 35 0 40 5 10 On-Resistance vs. Drain Current 25 30 1.8 VDS = 15 V ID = 7 A rDS(on) – On-Resistance (Normalized) 1.6 4 3 2 1 0 0.0 20 Capacitance 6 5 15 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) 2.0 VGS – Gate-to-Source Voltage (V) Output Characteristics r 1.5 - 55 °C VGS = 10 V ID = 7 A 1.4 1.2 1.0 0.8 1.5 3.0 4.5 6.0 7.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72938 S-61959-Rev. C, 09-Oct-06 150 www.vishay.com 3 Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 0.10 DS(on) – On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C r I S – Source Current (A) 40 1 0.0 0.08 0.06 0.04 ID = 7 A 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 6 8 10 VGS – Gate-to-Source Voltage (V) VSD – Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 200 0.2 160 ID = 250 µA 0.0 Power (W) V GS(th) Variance (V) 4 - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ – Temperature (°C) 0.1 1 10 Time (sec) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 rDS(on) Limited IDM Limited I D – Drain Current (A) 10 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 1s BVDSS Limited 10 s dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Safe Operating Area www.vishay.com 4 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 5 Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 40 40 VGS = 10 thru 4 V 35 35 30 I D – Drain Current (A) I D – Drain Current (A) 30 25 3V 20 15 10 25 20 15 TC = 125 °C 10 25 °C 5 5 0 0 0.0 - 55 °C 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1400 0.040 1120 0.030 0.025 C – Capacitance (pF) r DS(on) – On-Resistance (Ω) 0.035 VGS = 4.5 V 0.020 0.015 VGS = 10 V Ciss 840 560 Coss 0.010 280 Crss 0.005 0.000 0 0 5 10 15 20 25 30 35 40 0 5 ID – Drain Current (A) 10 20 25 30 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 6 VDS = 15 V ID = 7.4 A 5 1.6 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 15 4 3 2 VGS = 10 V ID = 7.4 A 1.4 1.2 1.0 0.8 1 0 0 2 4 6 Qg – Total Gate Charge (nC) Gate Charge www.vishay.com 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted DS(on) – On-Resistance (Ω) 0.10 TJ = 150 °C 10 TJ = 25 °C r I S – Source Current (A) 40 1 0.0 0.08 0.06 0.04 ID = 7.4 A 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 VSD – Source-to-Drain Voltage (V) 6 8 10 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 100 200 160 10 Power (W) I R – Reverse Current (mA) 4 1 0.1 120 80 40 0.01 0.001 0 0 25 50 75 100 125 150 0.001 0.01 TJ – Temperature (°C) 0.1 1 10 Time (sec) Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient 100 rDS(on) Limited IDM Limited I D – Drain Current (A) 10 1 ms 1 10 ms ID(on) Limited 100 ms 0.1 1s TC = 25 °C Single Pulse 10 s dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Safe Operating Area Document Number: 72938 S-61959-Rev. C, 09-Oct-06 www.vishay.com 7 Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72938. www.vishay.com 8 Document Number: 72938 S-61959-Rev. C, 09-Oct-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1