SI5414DC-T1-GE3

New Product Si5414DC Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.017 at VGS = 4.5 V 6 0.022 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 12.5 nC APPLICATIONS 1206-8 ChipFET • Load Switches - Notebook System Power ® 1 D D D D D Marking Code D AL D XXX Lot Traceability and Date Code G S G Part # Code S Bottom View Ordering Information: Si5414DC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature)e, f ID IDM IS PD TJ, Tstg Limit 20 ± 12 Unit V 6a 6a 6a, b, c 6a, b, c 30 5.2 2.1b, c 6.3 4 2.5b, c 1.6b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 40 50 Maximum Junction-to-Ambienta, c, d °C/W RthJF Maximum Junction-to-Foot (Drain) Steady State 15 20 Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 °C/W. e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65298 S09-1920-Rev. A, 28-Sep-09 www.vishay.com 1 New Product Si5414DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 19 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.5 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 4.5 V -4 0.6 20 µA A VGS = 4.5 V, ID = 9.9 A 0.014 0.017 VGS = 2.5 V, ID = 8.7 A 0.017 0.022 VDS = 10 V, ID = 9.9 A 41 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1500 VDS = 10 V, VGS = 0 V, f = 1 MHz 280 pF 125 VDS = 10 V, VGS = 10 V, ID = 9.9 A 27 41 12.5 19 2.8 VDS = 10 V, VGS = 4.5 V, ID = 9.9 A 2.1 2.3 f = 1 MHz 4.6 14 25 12 20 36 55 tf 14 25 td(on) 10 15 10 15 25 40 10 15 td(on) tr td(off) tr td(off) nC VDD = 10 V, RL = 1.3 Ω ID ≅ 7.9 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 10 V, RL = 1.3 Ω ID ≅ 7.9 A, VGEN = 10 V, Rg = 1 Ω tf 0.46 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 5.2 30 IS = 7.9 A, VGS = 0 V IF = 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 20 40 ns 10 20 nC 8 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65298 S09-1920-Rev. A, 28-Sep-09 New Product Si5414DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 30 VGS = 5 V thru 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 VGS = 2 V 6 4 TC = 25 °C 2 6 TC = 125 °C VGS = 1.5 V 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 2000 0.024 1600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 VGS = 2.5 V 0.018 VGS = 4.5 V 0.012 2.5 Ciss 1200 800 Coss 0.006 400 0.000 0 Crss 0 6 12 18 24 30 0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.6 10 ID = 9.9 A VGS = 4.5 V; ID = 12 A 1.4 VDS = 5 V 6 VDS = 16 V VDS = 10 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.2 1.0 0.8 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65298 S09-1920-Rev. A, 28-Sep-09 24 30 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5414DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.04 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 9.9 A 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.03 TJ = 125 °C 0.02 TJ = 25 °C 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.4 50 1.3 40 1.2 Power (W) VGS(th) (V) ID = 250 µA 1.1 1.0 0.9 30 20 0.8 10 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 10 -3 150 10 -2 10 -1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65298 S09-1920-Rev. A, 28-Sep-09 New Product Si5414DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 8 16 Power (W) I D - Drain Current (A) 6 12 8 4 Package Limited 2 4 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65298 S09-1920-Rev. A, 28-Sep-09 www.vishay.com 5 New Product Si5414DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 95 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65298. www.vishay.com 6 Document Number: 65298 S09-1920-Rev. A, 28-Sep-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1