SI5443DC-T1-E3

Si5443DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V ± 4.9 0.074 at VGS = - 3.6 V ± 4.6 0.110 at VGS = - 2.5 V ± 3.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated 1206-8 ChipFET ® S 1 D D D D G D Marking Code D G BB XX Lot Traceability and Date Code S Part # Code Bottom View D Ordering Information: Si5443DC-T1-E3 (Lead-(Pb)-free) Si5443DC-T1-GE3 (Lead-(Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Source Currenta IAS TA = 25 °C Maximum Power Dissipationa TA = 85 °C PD ± 3.6 ± 3.5 ± 2.6 ± 15 - 2.1 - 1.1 2.5 1.3 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range V ± 4.9 IDM Pulsed Drain Current Soldering Recommendations (Peak ID Unit - 55 to 150 Temperature)b, c A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 40 50 80 95 15 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71064 S09-0129-Rev. D, 02-Feb-09 www.vishay.com 1 Si5443DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit ± 100 nA Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistance a Diode Forward Voltage a VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V µA - 15 A VGS = - 4.5 V, ID = - 3.6 A 0.056 0.065 VGS = - 3.6 V, ID = - 3.3 A 0.065 0.074 VGS = - 2.5 V, ID = - 2.7 A 0.095 0.110 gfs VDS = - 10 V, ID = - 3.6 A 10 VSD IS = - 1.1 A, VGS = 0 V - 0.8 - 1.2 9 14 VDS = - 10 V, VGS = - 4.5 V, ID = - 3.6 A 2.2 RDS(on) Forward Transconductancea V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.2 15 25 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω 30 45 50 75 35 50 IF = - 1.1 A, dI/dt = 100 A/µs 30 60 µs ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 15 VGS = 5 thru 3.5 V 3V TC = - 55 °C 12 I D - Drain Current (A) I D - Drain Current (A) 12 2.5 V 9 6 25 °C 9 125 °C 6 2V 3 3 1.5 V 0 0.0 www.vishay.com 2 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3.0 Document Number: 71064 S09-0129-Rev. D, 02-Feb-09 Si5443DC Vishay Siliconix 0.20 1500 0.16 1200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 2.5 V 0.12 VGS = 3.6 V 0.08 VGS = 4.5 V 0.04 Ciss 900 600 300 Coss Crss 0.00 0 0 3 6 9 12 15 0 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.6 VDS = 10 V ID = 3.6 A VGS = 4.5 V ID = 3.6 A 4 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 3 2 1 1.2 1.0 0.8 0 0 2 4 6 8 0.6 - 50 10 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.20 20 RDS(on) - On-Resistance (Ω) TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 0.15 ID = 3.6 A 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71064 S09-0129-Rev. D, 02-Feb-09 1.4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si5443DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 50 40 ID = 250 µA Power (W) VGS(th) Variance (V) 0.4 0.2 30 20 0.0 10 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71064. www.vishay.com 4 Document Number: 71064 S09-0129-Rev. D, 02-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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