SI5475DDC-T1-GE3

Si5475DDC www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES 1206-8 ChipFET® Single D D 8 D 7 S 6 5 1. 9 m m 1 3.0 mm Top View • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 2 D 3 D 4 D G APPLICATIONS • Load switch for portable devices Bottom View S Marking code: BR PRODUCT SUMMARY VDS (V) -12 RDS(on) max. () at VGS = -4.5 V 0.032 RDS(on) max. () at VGS = -2.5 V 0.040 RDS(on) max. () at VGS = -1.8 V 0.052 Qg typ. (nC) 20 ID (A) a Configuration G -6 P-Channel MOSFET Single D ORDERING INFORMATION Package 1206-8 ChipFET Lead (Pb)-free and halogen-free Si5475DDC-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -12 Gate-source voltage VGS ±8 TC = 70 °C TA = 25 °C -6 a ID -6 a, b, c -5.6 b, c TA = 70 °C Pulsed drain current Continuous source-drain diode current IDM TC = 25 °C TA = 25 °C Maximum power dissipation TA = 25 °C -4.8 IS -1.9 b, c 5.7 3 PD W 2.3 b, c 1.2 b, c TA = 70 °C Operating junction and storage temperature range A -20 TC = 25 °C TC = 70 °C V -6 a TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering recommendations (peak temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f t5s SYMBOL TYPICAL MAXIMUM RthJA 45 55 UNIT °C/W 18 22 Maximum junction-to-foot (drain) Steady state RthJF Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 95 °C/W S17-0618-Rev. C, 01-May-17 Document Number: 68750 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5475DDC www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -12 - - V - -25 - - 3 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS = -12 V, VGS = 0 V - - -1 VDS = -12 V, VGS = 0 V, TJ = 85 °C - - -5 ID(on) VDS  -5 V, VGS = -4.5 V -20 - - VGS = -4.5 V, ID = -5.4 A - 0.026 0.032 RDS(on) VGS = -2.5 V, ID = -4.8 A - 0.032 0.040 VGS = -1.8 V, ID = -2 A - 0.041 0.052 VDS = -6 V, ID = -5.4 A - 21 - - 1600 - VDS = -6 V, VGS = 0 V, f = 1 MHz - 400 - - 320 - - 32 50 - 20 30 VDS = -6 V, VGS = -4.5 V, ID = -7.5 A - 2.5 - - 5.5 - f = 1 MHz - 4.1 - - 20 30 - 40 60 - 45 70 gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -6 V, VGS = -8 V, ID = -7.5 A td(on) VDD = -6 V, RL = 1.1  ID  -5.6 A, VGEN = -4.5 V, Rg = 1  tr td(off) tf - 20 30 td(on) - 10 15 - 12 20 - 45 70 - 15 25 VDD = -6 V, RL = -1.1  ID  -5.6 A, VGEN = -8 V, Rg = 1  tr td(off) tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -5.6 A, VGS = 0 V IF = -5.6 A, di/dt = 100 A/μs, TJ = 25 °C - - -4.8 - - -20 - -0.8 -1.2 V - 42 65 ns - 50 75 nC - 20 - - 22 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0618-Rev. C, 01-May-17 Document Number: 68750 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5475DDC www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 VGS = 1.5 V 4 6 TC = 25 °C 4 TC = 125 °C 2 VGS = 1 V 0 0.0 TC = - 55 °C 0 VDS - Drain-to-Source Voltage (V) 0.4 0.8 1.2 1.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 1.0 1.5 2.0 2.5 0.0 3.0 2500 2000 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.08 2.0 VGS = 1.8 V 0.04 VGS = 2.5 V Ciss 1500 1000 VGS = 4.5 V 0.02 Coss 500 Crss 0.00 0 0 5 10 ID - Drain Current (A) 15 0 20 3 6 9 VDS - Drain-to-Source Voltage (V) Capacitance On Resistance vs. Drain Current 1.5 R DS(on) - On-Resistance (Normalized) 8 VGS - Gate-to-Source Voltage (V) 12 ID = 7.5 A 6 VDS = 6 V 4 VDS = 9.6 V 2 0 0 8 16 24 Qg - Total Gate Charge (nC) Gate Charge S17-0618-Rev. C, 01-May-17 32 1.4 VGS = 4.5 V, 2.5 V, ID = 5.4 A 1.3 1.2 1.1 VGS = 1.8 V, ID = 2 A 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 68750 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5475DDC www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 100 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5.4 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.08 0.06 TJ = 125 °C 0.04 0.02 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Forward Diode Voltage vs. Temperature 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 0.8 50 0.7 40 Power (W) VGS(th) (V) 0.6 ID = 250 µA 0.5 30 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 10-3 150 10-2 Threshold Voltage 10-1 1 Time (s) 10 100 600 Single Pulse Power 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 10 s 1s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0618-Rev. C, 01-May-17 Document Number: 68750 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5475DDC www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 15 5 4 Power (W) I D - Drain Current (A) 12 9 Package Limited 6 3 2 3 1 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Current Derating a 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-0618-Rev. C, 01-May-17 Document Number: 68750 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si5475DDC www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68750. S17-0618-Rev. C, 01-May-17 Document Number: 68750 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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