SI5853CDC-T1-E3

Si5853CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.2 nC APPLICATIONS SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.46 at 0.5 A 1 • Charging Switch for Portable Devices - With Integrated Low Vf Trench Schottky Diode 1206-8 ChipFET 1 A K S K D A A K S D Marking Code G JF G XX Lot Traceability and Date Code D Part # Code Bottom View P-Channel MOSFET Ordering Information: Si5853CDC-T1-E3 (Lead (Pb)-free) Si5853CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Symbol VDS VKA VGS Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) IDM Continuous Source Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 ID Temperature)d, e IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit - 20 20 ±8 - 4a - 3.4a - 2.9b, c - 2.3b, c - 10 - 2.6 Unit V A - 1.2b, c 1 3 3.1 2 1.5b, c 0.9b, c 2.5 1.6 1.2 0.76 - 55 to 150 260 W °C www.vishay.com 1 Si5853CDC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum RthJA 70 85 Maximum Junction-to-Foot (Drain) (MOSFET) RthJF 33 40 Maximum Junction-to-Ambient (Schottky)b, c, g RthJA 85 105 Maximum Junction-to-Foot (Drain) (Schottky) RthJF 40 50 Maximum Junction-to-Ambient (MOSFET)b, c, f Unit °C/W Notes: a. Package limited. b. Surface mounted on FR4 board. c. t ≤ 5 s. d. See Solder Profile (www.vishay.com/doc?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for MOSFETs is 120 °C/W. g. Maximum under steady state conditions for Schottky is 125 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V - 20 ID = - 250 µA mV/°C 2.1 VGS(th) VDS = VGS, ID = - 250 µA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V - 0.45 - 10 µA A VGS = - 4.5 V, ID = - 2.5 A 0.086 0.104 VGS = - 2.5 V, ID = - 2.1 A 0.120 0.144 VGS = - 1.8 V, ID = - 0.5 A 0.170 0.205 VDS = - 10 V, ID = - 2.5 A 6 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 350 VDS = - 10 V, VGS = 0 V, f = 1 MHz 65 VDS = - 10 V, VGS = - 8 V, ID = - 2.9 A 7.2 11 4.2 6.5 45 VDS = - 10 V, VGS = - 4.5 V, ID = - 2.9 A 0.7 f = 1 MHz 6.2 tr 15 VDD = - 10 V, RL = 4.4 Ω ID ≅ - 2.3 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 25 42 65 20 30 tf 10 15 td(on) 5 10 15 25 20 30 10 15 tr td(off) tf nC 1 td(on) td(off) pF VDD = - 10 V, RL = 4.4 Ω ID ≅ - 2.3 A, VGEN = - 8 V, Rg = 1 Ω ns Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 Si5853CDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.6 - 10 IS = - 2.3 A, VGS = 0 V IF = - 2.3 A dI/dt = 100 A/µs TJ = 25 °C A - 0.8 - 1.2 V 20 40 ns 15 30 nC 16 ns 4 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions Typ. Max. IF = 0.5 A Min. 0.381 0.46 IF = 1 A 0.468 0.560 IF = 1 A, TJ = 125 °C 0.44 0.53 Vr = 5 V 0.0081 0.080 Vr = 5 V, TJ = 85 °C 0.4 4 Vr = 5 V, TJ = 125 °C 2.8 28 Vr = 20 V 0.0093 0.09 Vr = 20 V, TJ = 85 °C 0.45 4.5 Vr = 20 V, TJ = 125 °C 3.2 32 Vr = 10 V 30 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 3 Si5853CDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 VGS = 5 V thru 2.5 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 8 6 VGS = 2 V 4 2 VGS = 1.5 V 1.2 0.8 TC = 125 °C 0.4 TC = 25 °C 0 TC = - 55 °C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.30 500 VGS = 1.8 V 0.25 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 0.20 0.15 VGS = 2.5 V 400 Ciss 300 200 Coss 0.10 100 VGS = 4.5 V Crss 0.05 0 0 2 4 6 8 10 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 8 ID = 2.5 A ID = 2.9 A 1.6 VDS = 10 V VDS = 16 V 4 2 VGS = 1.8 V 1.4 (Normalized) 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 VGS = 4.5 V, 2.5 V 1.0 0.8 0 0 www.vishay.com 4 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 Si5853CDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 10 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.5 A TJ = 25 °C 0.25 0.20 125 °C 0.15 0.10 25 °C 0.05 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 50 0.7 40 0.6 Power (W) V GS(th) (V) ID = 250 µA 0.5 0.4 0.3 - 50 30 20 10 - 25 0 25 50 75 100 125 0 0.0001 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) Limited by RDS(on)* 100 µs 1 1 ms 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse 0.01 0.01 0.1 * VGS BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 5 Si5853CDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 4 4 Power Dissipation (W) I D - Drain Current (A) 3 Package Limited 3 2 2 1 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 Si5853CDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 7 Si5853CDC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 1 I F - Forward Current (A) I R - Reverse Current (mA) 10 I R = 20 V 0.1 IR = 5 V 0.01 TJ = 150 °C TJ = 25 °C 0.1 0.0 0.001 0 25 50 75 100 125 150 0.1 0.2 0.3 0.4 TJ - Junction Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 0.5 0.6 180 Junction Capacitance (pF) 150 120 90 60 30 0 0 5 10 15 20 25 30 VKA - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 Si5853CDC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69774. Document Number: 69774 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000