SI5853DC-T1

Si5853DC Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) --20 rDS(on) (Ω) 0.110 @ VGS = --4.5 V 0.160 @ VGS = --2.5 V 0.240 @ VGS = --1.8 V ID (A) --3.6 --3.0 --2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (v) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 S K 1206-8 ChipFETt 1 A K K D D A S G G Marking Code JA XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET A Ordering Information: Si5853DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a on nuous ra urren Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky) Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec --20 20 8 --3.6 --2.6 --10 --1.8 1.0 7 2.1 1.1 1.3 0.68 Steady State Unit V 8 --2.7 --1.9 --0.9 A 1.1 0.6 0.96 0.59 --55 to 150 260 _C W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71239 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5853DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 5 sec Junction-to-Ambienta J ti t A bi t Steady State St d St t Device MOSFET Schottky MOSFET Schottky MOSFET Schottky Symbol Typical 50 77 Maximum 60 95 110 130 40 40 Unit RthJA 90 110 _C/W C/W Junction-to-Foot Junction to Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Steady State Steady State RthJF 30 33 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS DSS ID(on) VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 8 V VDS = --16 V, VGS = 0 V VDS = --16 V, VGS = 0 V, TJ = 85_C VDS ≤ --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --2.7 A Drain-Source On-State Resistancea rDS(on) DS(on) VGS = --2.5 V, ID = --2.2 A VGS = --1.8 V, ID = --1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --10 V, ID = --2.7 A IS = --0.9 A, VGS = 0 V --10 0.095 0.137 0.205 7 --0.8 --1.2 0.110 0.160 0.240 S V Ω --0.45 100 --1 --5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = --0.9 A, di/dt = 100 A/ms VDD = -- 10 V, RL = 10 Ω --10 10 ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω VDS = --10 V, VGS = --4.5 V, ID = --2.7 A , GS , DS 4.4 1.4 0.65 16 30 30 27 20 25 45 45 40 40 ns 6.5 nC Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop orwar tage rop Symbol VF Test Condition IF = 0.5 A IF = 0.5 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 85_C Vr = 20 V, TJ = 125_C Vr = 10 V Min Typ 0.42 0.33 0.002 0.10 1.5 31 Max 0.48 0.4 0.100 1 10 Unit V Maximum Reverse Leakage Current g Junction Capacitance www.vishay.com Irm rm CT mA pF 2-2 Document Number: 71239 S-21251—Rev. B, 05-Aug-02 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 3 V 8 I D -- Drain Current (A) 2.5 V I D -- Drain Current (A) 8 10 TC = --55_C 25_C MOSFET Transfer Characteristics 6 2V 4 6 125_C 4 2 1.5 V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 VGS = 1.8 V r DS(on) -- On-Resistance ( Ω ) 0.5 C -- Capacitance (pF) 600 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 0 0 Crss 4 VGS = 2.5 V VGS = 4.5 V Ciss 800 Capacitance 400 200 Coss 8 12 16 20 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 5 V GS -- Gate-to-Source Voltage (V) VDS = 10 V ID = 2.7 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.7 A 1.4 3 r DS(on) -- On-Resistance (Ω ) (Normalized) 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Document Number: 71239 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-3 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.4 MOSFET On-Resistance vs. Gate-to-Source Voltage r DS(on) -- On-Resistance ( Ω ) ID = 2.7 A 0.3 I S -- Source Current (A) TJ = 150_C 0.2 TJ = 25_C 0.1 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 --0.1 --0.2 --50 10 Power (W) 30 50 Single Pulse Power 40 20 --25 0 25 50 75 100 125 150 0 10 --4 10 --3 10 --2 10 --1 Time (sec) 1 10 100 600 TJ -- Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71239 S-21251—Rev. B, 05-Aug-02 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 MOSFET Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R -- Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F -- Forward Current (A) 1 TJ = 150_C 1 0.1 20 V 0.01 10 V TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) 150 0.1 0 0.2 0.4 0.6 0.8 1.0 VF -- Forward Voltage Drop (V) Capacitance CT -- Junction Capacitance (pF) 120 90 60 30 0 0 4 8 12 16 20 VKA -- Reverse Voltage (V Document Number: 71239 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-5 Si5853DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance SCHOTTKY 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-6 Document Number: 71239 S-21251—Rev. B, 05-Aug-02