SI5915BDC-T1-GE3

Si5915BDC Vishay Siliconix Dual P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ.) 5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance • 40 % Smaller Footprint than TSOP-6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS 1206-8 ChipFET® (Dual) • Load Switch or Battery Switch for Portable Devices 1 S1 S2 S1 D1 G1 D1 S2 D2 G1 Marking Code G2 DG XXX D2 G2 Lot Traceability and Date Code Part # Code D1 D2 P-Channel MOSFET P-Channel MOSFET Bottom View Ordering Information: Si5915BDC-T1-E3 (Lead (Pb)-free) Si5915BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit -8 ±8 - 4a - 4a ID Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V - 4a, b, c - 3.2b, c - 10 - 4a IDM Pulsed Drain Current Unit A - 1.9b, c 3.1 2 1.7b, c 1.1b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 62 33 Maximum 74 40 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 120 °C/W. Document Number: 70484 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 1 Si5915BDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C 2.1 - 0.45 - 1.0 V ± 100 nA VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 85 °C - 10 VDS ≤ 4 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.3 A - 10 0.070 VGS = - 2.5 V, ID = - 2.7 A 0.086 0.104 0.120 0.145 VDS = - 4 V, ID = - 3.3 A 9 VDS = - 4 V, VGS = 0 V, f = 1 MHz 160 420 pF 100 VDS = - 4 V, VGS = - 8 V, ID = - 4.1 A VDS = - 4 V, VGS = - 4.5 V, ID = - 4.1 A 9 14 5 7.5 0.7 nC 0.7 f = 1 MHz VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 7 12 20 30 45 30 tf 7 15 td(on) 5 10 12 20 tr Ω ms 20 td(off) µA A 0.058 VGS = - 1.8 V, ID = - 0.7 A td(on) td(off) V - 8.3 VDD = - 4 V, RL = 1.2 Ω ID ≅ - 3.3 A, VGEN = - 8 V, Rg = 1 Ω tf 20 30 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -4 - 10 IS = - 3.3 A, VGS = 0 V IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 60 90 nC 39 60 20 ns 40 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70484 S10-0548-Rev. B, 08-Mar-10 Si5915BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 VGS = 5 V thru 2.5 V 4 2V 6 4 1.5 V I D - Drain Current (A) I D - Drain Current (A) 8 3 2 TC = 125 °C 2 1 TC = 25 °C 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Curves vs. Temperature Output Characteristics 0.30 800 VGS = 1.8 V 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.25 0.20 0.15 VGS = 2.5 V 0.10 Ciss 400 Coss VGS = 4.5 V 200 0.05 Crss 0.00 0 0 2 4 6 8 10 0 4 6 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 8 1.8 8 ID = 4.1 A ID = 3.3 A VGS = 1.8 V 1.6 VDS = 4 V 4 VDS = 6.4 V 2 1.4 (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2 1.2 VGS = 2.5 V, 4.5 V 1.0 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Qg - Gate Charge On-Resistance vs. Junction Temperature Document Number: 70484 S10-0548-Rev. B, 08-Mar-10 150 www.vishay.com 3 Si5915BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.30 ID = 3.3 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.25 TJ = 150 °C TJ = 25 °C 0.20 0.15 TA = 125 °C 0.10 0.05 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 40 0.8 ID = 250 µA 30 Power (W) 0.7 0.6 20 0.5 0.4 - 50 1 VSD - Source-to-Drain Voltage (V) 0.9 V GS(th) (V) TA = 25 °C 10 0 - 25 0 25 50 75 100 125 150 0.0001 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 10 Limited by R DS(on) * I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 70484 S10-0548-Rev. B, 08-Mar-10 Si5915BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 6 3 Package Limited Power Dissipation (W) I D - Drain Current (A) 5 4 3 2 2 1 1 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70484 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 5 Si5915BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.05 0.02 0.1 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70484. www.vishay.com 6 Document Number: 70484 S10-0548-Rev. B, 08-Mar-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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