SI6404DQ-T1-E3

Si6404DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET® Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS COMPLIANT APPLICATIONS • Battery Switch • Charger Switch D TSSOP-8 D 1 S 2 S 3 G 4 Si6404DQ * Source Pins 2, 3, 6 and 7 must be tied common. G 8 D 7 S 6 S 5 D Top View S* Ordering Information: Si6404DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 8.6 8.9 6.9 30 1.5 0.95 1.75 1.08 1.14 0.69 TJ, Tstg Operating Junction and Storage Temperature Range V 11 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 55 70 95 115 35 45 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71440 S-80682-Rev. B, 31-Mar-08 www.vishay.com 1 Si6404DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS(th) VDS = VGS, ID = 250 µA 0.6 IGSS VDS = 0 V, VGS = ± 12 V ± 100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70 °C 10 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V V RDS(on) Forward Transconductancea Diode Forward Voltagea µA 20 A VGS = 10 V, ID = 11 A Drain-Source On-State Resistancea nA 0.0073 0.009 VGS = 4.5 V, ID = 10 A 0.0084 0.010 VGS = 2.5 V, ID = 8.8 A 0.0116 0.014 gfs VDS = 10 V, ID = 11 A 27 VSD IS = 1.5 A, VGS = 0 V 0.72 1.1 32 48 VDS = 15 V, VGS = 4.5 V, ID = 11 A 8.1 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 10 Gate Resistance Rg 7.5 td(on) Turn-On Delay Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 35 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω tr Rise Time nC IF = 1.5 A, di/dt = 100 A/µs 55 35 55 100 150 50 75 40 85 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 30 30 VGS = 10 thru 3 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 2V 12 18 12 TC = 125 °C 6 6 25 °C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 0.0 0.5 1.0 - 55 °C 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71440 S-80682-Rev. B, 31-Mar-08 Si6404DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6000 VGS = 2.5 V 0.012 5000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.015 VGS = 4.5 V 0.009 0.006 VGS = 10 V 0.003 Ciss 4000 3000 2000 Coss 1000 0.000 Crss 0 0 6 12 18 24 30 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 VDS = 15 V ID = 11 A VGS = 10 V ID = 11 A 1.6 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 18 6 4 2 1.4 1.2 1.0 0.8 0.6 - 50 0 0 15 30 45 60 75 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.05 30 TJ = 150 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 11 A 10 TJ = 25 °C 1 0.0 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71440 S-80682-Rev. B, 31-Mar-08 2 On-Resistance vs. Gate-to-Source Voltage s www.vishay.com 3 Si6404DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 0.4 50 0.2 40 0.0 Power (W) V GS(th) Variance (V) ID = 250 µA - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10-2 10-1 1 TJ - Temperature (°C) 10 100 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 95 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71440. www.vishay.com 4 Document Number: 71440 S-80682-Rev. 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