SI6943BDQ-T1-E3

Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6943BDQ G2 G1 8 D2 7 S2 6 S2 5 G2 Top View D2 D1 Ordering Information: Si6943BDQ-T1 Si6943BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 2.3 - 2.2 - 1.8 - 20 - 1.0 A - 0.7 1.10 0.80 0.70 0.50 TJ, Tstg Operating Junction and Storage Temperature Range V - 2.5 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 89 110 120 150 70 90 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72016 S-81056-Rev. B, 12-May-08 www.vishay.com 1 Si6943BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.45 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 70 °C -5 VDS = - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea - 0.8 ± 100 µA - 10 A VGS = - 4.5 V, ID = - 2.5 A 0.06 0.08 VGS = - 2.5 V, ID = - 1.9 A 0.08 0.105 gfs VDS = - 15 V, ID = - 2.5 A 8 VSD IS = - 1.0 A, VGS = 0 V - 0.75 - 1.2 5.7 10 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.6 Turn-On Delay Time td(on) 15 25 35 60 VDS = - 6 V, VGS = - 4.5 V, ID = - 2.5 A VDD = - 6 V, RL = 6 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 0.8 IF = - 1.0 A, dI/dt = 100 A/µs 35 60 30 50 30 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 5 thru 3.5 V 3V TC = - 55 °C 25 °C 16 2.5 V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 2V 4 125 °C 12 8 4 1.5 V 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 Document Number: 72016 S-81056-Rev. B, 12-May-08 Si6943BDQ Vishay Siliconix 0.15 1000 0.12 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 2.5 V 0.09 VGS = 4.5 V 0.06 600 Ciss 400 Coss 0.03 200 Crss 0.00 0 0 3 6 9 12 15 0 2 ID - Drain Current (A) 4 12 1.6 VGS = 4.5 V ID = 2.5 A VDS = 6 V ID = 2.5 A 1.4 4 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 10 Capacitance 5 3 2 1.2 1.0 0.8 1 1.3 2.6 3.9 5.2 0.6 - 50 6.5 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.20 20 10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.0 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0 0.0 6 0.16 ID = 2.5 A 0.12 0.08 0.04 0.00 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72016 S-81056-Rev. B, 12-May-08 1.5 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si6943BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C. unless otherwise noted 0.4 60 48 ID = 250 µA Power (W) V GS(th) Variance (V) 0.2 0.0 36 24 - 0.2 12 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 10-1 TJ - Temperature (°C) 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 ID - Drain Current (A) 10 1 ms Limited by R DS(on)* 10 ms 1 100 ms 1s 0.1 TC = 25 °C Single Pulse 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72016 S-81056-Rev. B, 12-May-08 Si6943BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72016. Document Number: 72016 S-81056-Rev. 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