SI7872DP-T1-E3

Si7872DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 0.030 at VGS = 4.5 V 0.022 at VGS = 10 V 0.028 at VGS = 4.5 V Channel-1 30 Channel-2 • Halogen-free Option Available ID (A) 10 8 10 8 • LITTLE FOOT® Plus Schottky SCHOTTKY PRODUCT SUMMARY VSD (V) Diode Forward Voltage 0.50 V at 1.0 A VDS (V) 30 RoHS • PWM Optimized • New Low Thermal Resistance PowerPAK® Package with low 1.07 mm Profile COMPLIANT APPLICATIONS • Asymmetrical Buck-Boost DC/DC Converter IF (A) 3.0 PowerPAK® SO-8 S1 6.15 mm 5.15 mm 1 G1 2 D1 S2 3 D2 G2 4 D1 8 D1 7 Schottky Diode G1 D2 6 G2 D2 5 Bottom View Ordering Information: Si7872DP-T1-E3 (Lead (Pb)-free) Si7872DP-T1-GE3 (Lead (Pb)-free and Halogen-f S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C Maximum Power Dissipationa TA = 70 °C Operating Junction and Storage Temperature Range ID IDM IS PD TJ, Tstg Soldering Recommendations (Peak Temperature)b,c 10 s Channel-1 Channel-2 Steady State Channel-1 Channel-2 30 ± 20 ± 12 ± 20 10 7 ± 12 6.4 5.1 V A 30 2.9 3.5 2.2 Unit 1.1 1.4 0.9 W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State RthJA RthJC MOSFET Typical Maximum 26 35 60 85 4.1 6.0 Schottky Typical Maximum 26 35 60 85 4.1 6.0 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72035 S-82116-Rev. C, 08-Sep-08 www.vishay.com 1 Si7872DP Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Symbol Test Conditions VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 6.5 A Forward Transconductanceb Diode Forward Voltageb gfs VDS = 15 V, ID = 7.5 A VSD IS = 1 A, VGS = 0 V Min. Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Typ.b 1.0 0.8 Max. 3.0 2.0 ± 100 ± 100 1 100 15 2000 20 20 Unit V nA µA A 0.017 0.016 0.024 0.020 19 21 0.75 0.47 0.022 0.022 0.030 0.028 7 11.5 2.9 3.8 2.5 3.5 1.5 1.8 9 12 10 10 19 40 9 9 35 28 11 18 Typ. 0.47 0.36 0.004 0.7 3.0 50 Max. 0.50 0.42 0.100 10 20 Ω S 1.2 0.5 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 7.5 A td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω IF = 1.7 A, dI/dt = 100 A/µs Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 nC Ω 15 20 17 17 30 66 15 15 55 45 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 1.0 A IF = 1.0 A, TJ = 125 °C Vr = 30 V Vr = 30 V, TJ = 100 °C Vr = – 30 V, TJ = 125 °C Vr = 10 V Min. Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72035 S-82116-Rev. C, 08-Sep-08 Si7872DP Vishay Siliconix MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 thru 5 V 4V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 5 20 15 10 TC = 125 °C 5 25 °C 3V - 55 °C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 Output Characteristics 5 1200 Ciss C - Capacitance (pF) 960 0.030 VGS = 4.5 V 0.020 R DS(on) 4 Transfer Characteristics 0.040 VGS = 10 V 720 480 Coss 0.010 240 Crss 0 0.000 0 5 10 15 20 25 0 30 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1 .8 10 VDS = 15 V ID = 7.5 A 1 .6 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V ) 6 4 2 VGS = 10 V ID = 7.5 A 1 .4 1 .2 1 .0 0 .8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72035 S-82116-Rev. C, 08-Sep-08 15 0 .6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (° C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7872DP Vishay Siliconix MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.06 20 0.05 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.04 ID = 7.5 A 0.03 0.02 0.01 0 .1 0 .0 0.00 0 .2 0 .4 0 .6 0 .8 1 .0 0 1 .2 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 100 0.4 0.2 80 ID = 250 μA 0.0 60 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) - 0.2 40 - 0.4 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 TJ - Temperature (°C) 10- 1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 1 ms 10 ms ID(on) Limited 1 100 ms TC = 25 °C Single Pulse 0.1 0.01 0 .1 1s 10 s DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot www.vishay.com 4 Document Number: 72035 S-82116-Rev. C, 08-Sep-08 Si7872DP Vishay Siliconix MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1 . Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 60 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 72035 S-82116-Rev. C, 08-Sep-08 www.vishay.com 5 Si7872DP Vishay Siliconix MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 thru 4 V 25 20 I D - Drain Current (A) I D - Drain Current (A) 25 3V 15 10 20 15 10 TC = 125 °C 5 5 0 0 0.0 25 °C - 55 °C 2 4 6 8 10 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 2000 0.032 1600 0.024 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 VGS = 4.5 V VGS = 10 V 0.016 0.008 3.5 4.0 Ciss 1200 800 400 Coss Crss 0.000 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 VDS = 15 V ID = 7.5 A 1.6 VGS = 10 V ID = 7.5 A 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 15 6 4 2 1.4 1.2 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72035 S-82116-Rev. C, 08-Sep-08 Si7872DP Vishay Siliconix MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C ID = 7.5 A 0.04 0.03 0.02 0.01 0.00 0.1 0.0 0 .3 0.6 1 .2 0.9 0 1.5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 100 0.3 80 ID = 250 μA 0.1 Power (W) V GS(th) Variance (V) 0.2 0.0 - 0.1 60 40 - 0.2 20 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10- 3 10- 2 TJ - Temperature (°C) 10- 1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited ID - Drain Current (A) 10 1 ms 10 ms ID(on) Limited 1 100 ms TC = 25 °C Single Pulse 0.1 0.01 0 .1 1s 10 s DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot Document Number: 72035 S-82116-Rev. C, 08-Sep-08 www.vishay.com 7 Si7872DP Vishay Siliconix MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1 . Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 60 °C/W 0.02 3. T JM - TA = PD MZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case www.vishay.com 8 Document Number: 72035 S-82116-Rev. C, 08-Sep-08 Si7872DP Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 10 IF - Forward Current (A) IR - Reverse Current (mA) TJ = 150 °C 1 30 V 0.1 24 V 0.01 TJ = 25 °C 0.001 1 0.0 0.0001 0 25 50 75 100 125 150 0.3 0.6 0.9 1.2 TJ - Temperature (°C) VF - Forward Voltage Drop (V ) Reverse Current vs. Junction Temperature Forward Voltage Drop 1.5 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72035. Document Number: 72035 S-82116-Rev. C, 08-Sep-08 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1