Si7901EDN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.048 at VGS = - 4.5 V
- 6.3
0.068 at VGS = - 2.5 V
- 5.3
0.090 at VGS = - 1.8 V
- 4.6
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETS: 1.8 V Rated
• ESD Protected: 4500 V
• Ultra Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
APPLICATIONS
• Bidirectional Switch
PowerPAK 1212-8
S1
S1
3.30 mm
S2
3.30 mm
1
G1
2
S2
3
G2
4
D1
8
D1
7
G1
D2
6
G2
3 kΩ
D2
3 kΩ
5
Bottom View
D1
D2
Ordering Information: Si7901EDN-T1-E3 (Lead (Pb)-free)
Si7901EDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA = 25 °C
TA = 85 °C
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
PD
10 s
Steady State
- 20
± 12
V
- 6.3
- 4.5
- 4.3
- 3.1
- 20
- 2.3
2.8
1.5
TJ, Tstg
- 1.1
1.3
0.7
- 55 to 150
260
Soldering Recommendationsb,c
Unit
A
W
°C
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
Steady State
RthJA
Typical
35
75
4
Maximum
44
94
5
Unit
°C/W
Maximum Junction-to-Case (Drain)
RthJC
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71430
S-83043-Rev. C, 22-Dec-08
www.vishay.com
1
Si7901EDN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Test Conditions
Min.
VDS = VGS, ID = - 800 µA
- 0.45
Parameter
Typ.
Max.
Unit
Static
VGS(th)
Gate Threshold Voltage
- 1.0
V
VDS = 0 V, VGS = ± 4.5 V
± 1.5
νA
VDS = 0 V, VGS = ± 12 V
± 10
mA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS ≤ - 5 V, VGS = - 4.5 V
RDS(on)
Forward Transconductancea
Diode Forward Voltagea
µA
- 20
A
VGS = - 4.5 V, ID = - 6.3 A
0.041
0.048
VGS = - 2.5 V, ID = - 5.3 A
0.057
0.068
VGS = - 1.8 V, ID = - 1 A
0.072
0.090
gfs
VDS = - 15 V, ID = - 6.3 A
14
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.2
12
18
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.3 A
2.5
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.9
Turn-On Delay Time
td(on)
2.5
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off DelayTime
tf
Fall Time
nC
4
4
6
15
23
12
18
µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
8
10 000
6
I GSS - Gate Current (µA)
I GSS - Gate Current (mA)
1000
4
2
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
0.01
0
0.001
0
www.vishay.com
2
4
8
12
16
0
3
6
9
12
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
Document Number: 71430
S-83043-Rev. C, 22-Dec-08
Si7901EDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
20
20
TC = - 55 °C
VGS = 5 thru 2.5 V
25 °C
16
I D - Drain Current (A)
I D - Drain Current (A)
16
2V
12
8
1.5 V
4
125 °C
12
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
4.0
0.5
1.0
VDS - Drain-to-Source Voltage (V)
2.5
3.0
Transfer Characteristics
2000
0.15
VGS = 1.8 V
0.12
1600
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.09
VGS = 2.5 V
0.06
VGS = 4.5 V
800
400
0.00
0
4
8
12
16
Ciss
1200
0.03
0
Coss
Crss
0
20
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.5
5
VGS = 4.5 V
ID = 6.3 A
VDS = 10 V
ID = 6.3 A
4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
1.5
3
2
1.3
1.1
0.9
1
0
0
2
Document Number: 71430
S-83043-Rev. C, 22-Dec-08
4
6
8
10
12
14
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
www.vishay.com
3
Si7901EDN
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.14
20
R DS(on) - On-Resistance (Ω)
0.12
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.10
0.08
ID = 6.3 A
0.06
0.04
0.02
0.00
1
0
0.3
0.6
0.9
1.2
1.5
0
1.8
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source
50
0.4
0.3
40
ID = 800 µA
0.2
Power (W)
VGS(th) Variance (V)
1
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
600
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
0.02
3. T JM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 71430
S-83043-Rev. C, 22-Dec-08
Si7901EDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71430.
Document Number: 71430
S-83043-Rev. C, 22-Dec-08
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000