SI7958DP-T1-E3

Si7958DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 11.3 0.020 at VGS = 4.5 V 10.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package • Dual MOSFET for Space Savings PowerPAK SO-8 S1 6.15 mm D1 5.15 mm 1 D2 G1 2 S2 3 G2 4 D1 8 G1 D1 7 G2 D2 6 D2 5 Bottom View Ordering Information: Si7958DP-T1-E3 (Lead (Pb)-free) Si7958DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TA = 25 °C TA = 70 °C ID IDM IS IAS EAS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 10 s 11.3 9.0 2.9 3.5 2.2 Steady State 40 ± 20 7.2 5.8 40 1.2 35 61 1.4 0.9 - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72661 S09-0223-Rev. C, 09-Feb-09 www.vishay.com 1 Si7958DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA IDSS VDS = 40 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS ≥ 5 V, VGS = 10 V µA 30 A VGS = 10 V, ID = 11.3 A 0.013 0.0165 VGS = 4.5 V, ID = 10.3 A 0.016 0.020 gfs VDS = 15 V, ID = 11.3 A 30 VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 50 75 VDS = 20 V, VGS = 10 V, ID = 11.3 A 8.8 RDS(on) Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time f = 1 MHz 17 tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Ω 1.9 td(on) Rise Time nC 10.4 30 VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 17 30 66 100 17 30 IF = 2.9 A, dI/dt = 100 A/µs 31 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 30 24 16 20 TC = 125 °C 10 8 25 °C 3V - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 72661 S09-0223-Rev. C, 09-Feb-09 Si7958DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4000 0.030 3500 3000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 Ciss 2500 2000 1500 1000 0.005 Coss 0 0.000 0.0 8.0 16.0 24.0 32.0 0 40.0 8 ID - Drain Current (A) 16 40 1.8 VDS = 20 V ID = 11.3 A VGS - Gate-to-Source Voltage (V) 32 Capacitance 10 VGS = 10 V ID = 11.3 A 1.6 6 4 2 1.4 (Normalized) RDS(on) - On-Resistance 8 1.2 1.0 0.8 0.6 0 0 10 20 30 40 - 50 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.05 RDS(on) - On-Resistance (Ω) 40 I S - Source Current (A) 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current TJ = 150 °C 10 TJ = 25 °C 1 0.0 Crss 500 0.04 ID = 11.3 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72661 S09-0223-Rev. C, 09-Feb-09 10 www.vishay.com 3 Si7958DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.4 0.2 80 ID = 250 µA - 0.2 Power (W) V GS(th) (V) 0.0 - 0.4 - 0.6 60 40 - 0.8 20 - 1.0 - 1.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited ID - Drain Current (A) Limited by RDS(on)* 100 µs 10 1 ms 1 10 ms ID(on) Limited 100 ms 0.1 1s TA = 25 °C Single Pulse 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 60 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72661 S09-0223-Rev. C, 09-Feb-09 Si7958DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72661. Document Number: 72661 S09-0223-Rev. 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