SI7958DP

Si7958DP New Product Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) 0.0165 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) 11.3 10.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings Package APPLICATIONS D Automotive* − 12-V Boardnet − Motor Drives − High-Side Switch *Contact factory for automotive qualification PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 G1 S2 5.15 mm 3 4 G2 D1 8 7 G1 D1 D2 G2 6 5 D2 Bottom View Ordering Information: Si7958DP-T1—E3 (Lead Free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 11.3 9.0 40 2.9 35 61 3.5 2.2 Steady State Unit V 7.2 5.8 A 1.2 mJ 1.4 0.9 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Mi ti t A bi t Maximum J Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72661 S-32677—Rev. A, 29-Dec-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit _C/W 1 Si7958DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11.3 A VGS = 4.5 V, ID = 10.3 A VDS = 15 V, ID = 11.3 A IS = 2.9 A, VGS = 0 V 30 0.013 0.016 30 0.8 1.2 0.0165 0.020 1 3 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resostamce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 11.3 A 50 8.8 10.4 1.9 17 17 66 17 31 30 30 100 30 60 ns W 75 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 4 V 32 I D − Drain Current (A) I D − Drain Current (A) 30 40 Transfer Characteristics 24 20 16 8 3V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 10 TC = 125_C 25_C 0 0.0 −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72661 S-32677—Rev. A, 29-Dec-03 www.vishay.com 2 Si7958DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.030 r DS(on) − On-Resistance ( W ) 0.025 C − Capacitance (pF) 0.020 VGS = 4.5 V 0.015 0.010 0.005 0.000 0.0 VGS = 10 V Vishay Siliconix On-Resistance vs. Drain Current 4000 3500 3000 2500 2000 1500 1000 500 0 Coss Capacitance Ciss Crss 8.0 16.0 24.0 32.0 40.0 0 8 16 24 32 40 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 20 V ID = 11.3 A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 11.3 A 8 6 4 2 0 0 10 20 30 40 50 Qg − Total Gate Charge (nC) r DS(on) − On-Resistance (W) (Normalized) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.05 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.04 ID = 11.3 A 0.03 I S − Source Current (A) 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72661 S-32677—Rev. A, 29-Dec-03 www.vishay.com 3 Si7958DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 80 −0.0 V GS(th) Variance (V) −0.2 −0.4 −0.6 −0.8 20 −1.0 −1.2 −50 0 0.001 ID = 250 mA Power (W) 60 100 Single Pulse Power 40 −25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area, Junction-To-Ambient rDS(on) Limited IDM Limited P(t) = 0.0001 P(t) = 0.001 10 I D − Drain Current (A) 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 P(t) = 1 P(t) = 10 dc 0.01 0.1 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72661 S-32677—Rev. A, 29-Dec-03 Si7958DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 72661 S-32677—Rev. A, 29-Dec-03 www.vishay.com 5